Solar cells and modules with fired multilayer stacks
Intercalation pastes for use with semiconductor devices are disclosed. The pastes contain precious metal particles, intercalating particles, and an organic vehicle and can be used to improve the material properties of metal particle layers. Specific formulations have been developed to be screen-printed directly onto a dried metal particle layer and fired to make a fired multilayer stack. The fired multilayer stack can be tailored to create a solderable surface, high mechanical strength, and low contact resistance. In some embodiments, the fired multilayer stack can etch through a dielectric layer to improve adhesion to a substrate. Such pastes can be used to increase the efficiency of silicon solar cells, specifically multi- and mono-crystalline silicon back-surface field (BSF), and passivated emitter and rear contact (PERC) photovoltaic cells. Other applications include integrated circuits and more broadly, electronic devices.
1. A solar cell, comprising:
a silicon substrate having a front surface and a rear surface;
at least one front dielectric layer directly on at least a portion of the front surface of the silicon substrate;
a plurality of fine grid lines on a portion of the front surface of the silicon substrate;
at least one front busbar layer in electrical contact with at least one of the plurality of fine grid lines;
an aluminum particle layer on at least a portion of the rear surface of the silicon substrate, the aluminum particle layer comprising aluminum particles; and
a rear tabbing layer on a portion of the rear surface of the silicon substrate, wherein the rear tabbing layer comprises:
a modified aluminum particle layer on a portion of the rear surface of the silicon substrate; and
a modified intercalation layer directly on at least a portion of the modified aluminum particle layer, the modified intercalation layer having a solderable surface;
wherein the modified aluminum particle layer comprises the aluminum particles and at least one material from the modified intercalation layer;
wherein the modified intercalation layer comprises a precious metal and a material selected from the group consisting of antimony, arsenic, barium, bismuth, boron, cadmium, calcium, cerium, cesium, chromium, cobalt, gallium, germanium, hafnium, indium, iron, lanthanum, lead, lithium, magnesium, manganese, molybdenum, niobium, phosphorous, potassium, rhenium, selenium, silicon, sodium, strontium, sulfur, tellurium, tin, vanadium, zinc, zirconium, combinations thereof, and alloys thereof, oxides thereof, composites thereof, and other combinations thereof.
2. The solar cell of claim 1 , wherein the modified intercalation layer comprises two phases: a precious metal phase and an intercalation phase;
wherein more than 50% of the solderable surface comprises the precious metal phase;
wherein the modified aluminum particle layer comprises the aluminum particles and at least one material from the intercalation phase; and
wherein the intercalation phase comprises a material selected from the group consisting of antimony, arsenic, barium, bismuth, boron, cadmium, calcium, cerium, cesium, chromium, cobalt, gallium, germanium, hafnium, indium, iron, lanthanum, lead, lithium, magnesium, manganese, molybdenum, niobium, phosphorous, potassium, rhenium, selenium, silicon, sodium, strontium, sulfur, tellurium, tin, vanadium, zinc, zirconium, combinations thereof, and alloys thereof, oxides thereof, composites thereof, and other combinations thereof.
3. The solar cell of claim 1 , wherein the modified intercalation layer comprises two sublayers:
an intercalation sublayer directly on at least a portion of the modified aluminum particle layer; and
a precious metal sublayer directly on at least a portion of the intercalation sublayer; wherein the solderable surface comprises the precious metal sublayer; wherein the modified aluminum particle layer comprises the aluminum particles and at least one material from the intercalation sublayer; and
wherein the intercalation sublayer comprises a material selected from the group consisting of antimony, arsenic, barium, bismuth, boron, cadmium, calcium, cerium, cesium, chromium, cobalt, gallium, germanium, hafnium, indium, iron, lanthanum, lead, lithium, magnesium, manganese, molybdenum, niobium, phosphorous, potassium, rhenium, selenium, silicon, sodium, strontium, sulfur, tellurium, tin, vanadium, zinc, zirconium, combinations thereof, and alloys thereof, oxides thereof, composites thereof, and other combinations thereof.
4. The solar cell of claim 1 , wherein the modified intercalation layer comprises two sublayers:
a bismuth-rich sublayer directly on the modified aluminum particle layer; and
a silver-rich sublayer directly on the bismuth-rich sublayer;
wherein the modified aluminum particle layer further comprises at least one material selected from the group consisting of aluminum oxides, bismuth, and bismuth oxides; and the bismuth-rich sublayer has a thickness between 0.01 μm and 5 μm.
5. The solar cell of claim 4 , wherein the modified aluminum particle layer further comprises bismuth, and a weight ratio of bismuth to bismuth and aluminum (Bi:(Bi+Al)) is at least 20% higher in the modified aluminum particle layer than in the aluminum particle layer.
6. The solar cell of claim 1 , wherein the precious metal comprises a material selected from the group consisting of silver, gold, platinum, palladium, rhodium, and alloys thereof, composites thereof, and other combinations thereof.
7. The solar cell of claim 1 further comprising at least one rear dielectric layer directly on at least a portion of the rear surface of the silicon substrate, wherein the rear dielectric layer comprises at least one material selected from the group consisting of silicon, aluminum, germanium, hafnium, gallium, and oxides thereof, nitrides thereof, composites thereof, and combinations thereof.
8. The solar cell of claim 1 further comprising a first rear dielectric layer comprising aluminum oxide directly on at least a portion of the rear surface of the silicon substrate and a second rear dielectric layer comprising silicon nitride directly on the first rear dielectric layer.
9. The solar cell of claim 1 further comprising a solid aluminum-silicon eutectic layer directly on the silicon substrate.
10. The solar cell of claim 1 , wherein a portion of the rear tabbing layer has an average peak to valley height greater than 12 μm.
11. The solar cell of claim 1 further comprising a tabbing ribbon directly on at least a portion of the solderable surface of the modified intercalation layer.
12. The solar cell of claim 1 , wherein the solderable surface comprises at least 70 wt % silver.
13. The solar cell of claim 1 , wherein the aluminum particle layer has a thickness between 1 μm and 50 μm.
14. The solar cell of claim 1 , wherein the rear tabbing layer has a thickness between 1 μm and 50 μm.
15. A solar cell module comprising:
a front sheet having a front surface and a rear surface;
a front encapsulant layer on the rear surface of the front sheet;
a first silicon solar cell and a second silicon solar cell on the front encapsulant layer, each silicon solar cell comprising:
a silicon substrate having a front surface and a rear surface;
at least one front dielectric layer directly on at least a portion of the front surface of the silicon substrate;
a plurality of fine grid lines on a portion of the front surface of the silicon substrate;
at least one front busbar layer in electrical contact with at least one of the plurality of fine grid lines;
an aluminum particle layer on at least a portion of the rear surface of the silicon substrate, the aluminum particle layer comprising aluminum particles; and
a rear tabbing layer on a portion of the rear surface of the silicon substrate, wherein the rear tabbing layer comprises:
a modified aluminum particle layer on a portion of the rear surface of the silicon substrate; and
a modified intercalation layer directly on at least a portion of the modified aluminum particle layer, the modified intercalation layer having a solderable surface;
wherein the modified intercalation layer comprises a precious metal and a material selected from the group consisting of antimony, arsenic, barium, bismuth, boron, cadmium, calcium, cerium, cesium, chromium, cobalt, gallium, germanium, hafnium, indium, iron, lanthanum, lead, lithium, magnesium, manganese, molybdenum, niobium, phosphorous, potassium, rhenium, selenium, silicon, sodium, strontium, sulfur, tellurium, tin, vanadium, zinc, zirconium, combinations thereof, and alloys thereof, oxides thereof, composites thereof, and other combinations thereof; and
wherein the modified aluminum particle layer comprises the aluminum particles and at least one material from the modified intercalation layer;
a first cell interconnect, comprising:
a first tabbing ribbon in electrical contact with both the front busbar layer of the first silicon solar cell, and the rear tabbing layer of the second silicon solar cell;
a rear sheet having a front surface and a rear surface, the rear surface of the rear sheet exposed to an outside environment;
a rear encapsulant layer on the front surface of the rear sheet, wherein a first portion of the rear encapsulant layer on the first silicon solar cell and the second solar cell, and a second portion of the rear encapsulant layer on the front encapsulant layer.
16. The solar cell module of claim 15 , wherein the modified intercalation layer comprises a precious metal and a material selected from the group consisting of bismuth, boron, indium, lead, silicon, tellurium, tin, vanadium, zinc, combinations thereof, and alloys thereof, oxides thereof, composites thereof, and other combinations thereof.
17. The solar cell module of claim 15 , wherein the modified intercalation layer comprises two phases: a precious metal phase and an intercalation phase;
wherein more than 50% of the solderable surface comprises the precious metal phase;
wherein the modified aluminum particle layer comprises the aluminum particles and at least one material from the intercalation phase; and
wherein the intercalation phase comprises a material selected from a group consisting of antimony, arsenic, barium, bismuth, boron, cadmium, calcium, cerium, cesium, chromium, cobalt, gallium, germanium, hafnium, indium, iron, lanthanum, lead, lithium, magnesium, manganese, molybdenum, niobium, phosphorous, potassium, rhenium, selenium, silicon, sodium, strontium, sulfur, tellurium, tin, vanadium, zinc, zirconium, combinations thereof, and alloys thereof, oxides thereof, composites thereof, and other combinations thereof.
18. The solar cell module of claim 15 , wherein the modified intercalation layer comprises two sublayers:
an intercalation sublayer directly on at least a portion of the modified aluminum particle layer; and
a precious metal sublayer directly on at least a portion of the intercalation sublayer;
wherein the modified aluminum particle layer comprises the aluminum particles and at least one material from the intercalation sublayer; and
wherein the intercalation sublayer comprises a material selected from a group consisting of antimony, arsenic, barium, bismuth, boron, cadmium, calcium, cerium, cesium, chromium, cobalt, gallium, germanium, hafnium, indium, iron, lanthanum, lead, lithium, magnesium, manganese, molybdenum, niobium, phosphorous, potassium, rhenium, selenium, silicon, sodium, strontium, sulfur, tellurium, tin, vanadium, zinc, zirconium, combinations thereof, and alloys thereof, oxides thereof, composites thereof, and other combinations thereof.
19. The solar cell module of claim 15 , wherein the modified intercalation layer comprises two sublayers:
a bismuth-rich sublayer directly on the modified aluminum particle layer; and
a silver-rich sublayer directly on the bismuth-rich sublayer;
wherein the modified aluminum particle layer comprises the aluminum particles and at least one material selected from the group consisting of, aluminum oxides, bismuth, and bismuth oxides.
20. The solar cell module of claim 15 , wherein the first cell interconnect further comprises a junction box in contact with the rear sheet.
21. The solar cell module of claim 15 , further comprising at least one busbar ribbon connecting to the first tabbing ribbon.
22. The solar cell module of claim 15 , wherein the front dielectric layer comprises at least one material selected from the group consisting of silicon, aluminum, germanium, hafnium, gallium, and oxides thereof, nitrides thereof, composites thereof, and combinations thereof.
23. The solar cell module of claim 15 , further comprising at least one rear dielectric layer directly on the rear surface of the silicon substrate, wherein rear dielectric layer comprises at least one material selected from the group consisting of silicon, aluminum, germanium, hafnium, gallium, oxides thereof, nitrides thereof, composites thereof, and combinations thereof.
24. The solar cell module of claim 15 , further comprising a first rear dielectric layer comprising aluminum oxide directly on at least a portion of the rear surface of the silicon substrate and a second rear dielectric layer comprising silicon nitride directly on the first rear dielectric layer.
25. The solar cell module of claim 15 , further comprising a solid aluminum silicon eutectic layer directly on the rear surface of the silicon substrate.
26. The solar cell module of claim 15 , wherein the intercalation layer comprises bismuth, and a weight ratio of bismuth to bismuth and aluminum (Bi:(Bi+Al)) is at least 20% higher in the modified aluminum particle layer than in the aluminum particle layer.
27. The solar cell module of claim 15 , wherein a portion of the rear tabbing layer has an average peak to valley height greater than 12 μm.
28. The solar cell of claim 1 , wherein a portion of the modified aluminum particle layer has variable thickness.
29. The solar cell module of claim 15 , wherein a portion of the modified aluminum particle layer has variable thickness.
30. A solar cell comprising:
a silicon substrate having a front surface and a rear surface;
at least one front dielectric layer directly on at least a portion of the front surface of the silicon substrate;
a plurality of fine grid lines on a portion of the front surface of the silicon substrate;
at least one front busbar layer in electrical contact with at least one of the plurality of fine grid lines;
an aluminum particle layer on at least a portion of the rear surface of the silicon substrate, the aluminum particle layer comprising aluminum particles; and
a rear tabbing layer on a portion of the rear surface of the silicon substrate, wherein the rear tabbing layer comprises:
a modified aluminum particle layer on a portion of the rear surface of the silicon substrate; and
a modified intercalation layer directly on at least a portion of the modified aluminum particle layer;
wherein the modified intercalation layer comprises two sublayers:
an intercalation sublayer directly on at least a portion of the modified aluminum particle layer; and
a precious metal sublayer directly on at least a portion of the intercalation sublayer, the precious metal sublayer having a solderable surface;
wherein the modified aluminum particle layer comprises the aluminum particles and at least one material from the intercalation sublayer;
wherein the intercalation sublayer comprises a precious metal and a material selected from the group consisting of antimony, arsenic, barium, bismuth, boron, cadmium, calcium, cerium, cesium, chromium, cobalt, gallium, germanium, hafnium, indium, iron, lanthanum, lead, lithium, magnesium, manganese, molybdenum, niobium, phosphorous, potassium, rhenium, selenium, silicon, sodium, strontium, sulfur, tellurium, tin, vanadium, zinc, zirconium, combinations thereof, and alloys thereof, oxides thereof, composites thereof, and other combinations thereof.