ALD/PARYLENE MULTI-LAYER THIN FILM STACK
Described herein is a multi-layer thin film stack including a first ALD layer of a first metal oxide deposited on a substrate surface of a substrate, a first parylene layer covering the first ALD layer, and a second ALD layer of a second metal oxide covering the first parylene layer. The multi-layer thin film stack further includes a second parylene layer covering the second ALD layer.
1 . A multi-layer thin film stack comprising:
a first ALD layer of a first metal oxide deposited on a substrate surface of a substrate;
a first parylene layer covering the first ALD layer;
a second ALD layer of a second metal oxide covering the first parylene layer; and
a second parylene layer covering the second ALD layer.
2 . The multi-layer thin film stack of claim 1 , wherein the first ALD layer is comprised of an alloy of two or more following metal oxide materials: aluminum oxide (Al 2 O 3 ), titanium dioxide (TiO 2 ), silicon dioxide (SiO 2 ), and zirconium oxide (ZrO 2 ).
3 . The multi-layer thin film stack of claim 2 , wherein the second ALD layer is comprised of an alloy of two or more following metal oxide materials: aluminum oxide (Al 2 O 3 ), titanium dioxide (TiO 2 ), silicon dioxide (SiO 2 ), and zirconium oxide (ZrO 2 ).
4 . The multi-layer thin film stack of claim 3 , wherein the first and second ALD layer are comprised of a same alloy.
5 . The multi-layer thin film stack of claim 5 , wherein the first and second ALD layer are comprised of a different alloy.
6 . The multi-layer thin film stack of claim 1 , wherein the first and second parylene layers are at least one of parylene A, parylene C, parylene N, parylene D, parylene VT-4, parylene AF-4, or mixtures or derivations of parylene A, parylene C, parylene N, parylene D, parylene VT-4, parylene AF-4.
7 . The multi-layer thin film stack of claim 1 , wherein the first parylene layer and the second parylene layer are a same parylene material.
8 . The multi-layer thin film stack of claim 1 , wherein the first parylene layer and the second parylene layer are a different parylene material.
9 . The multi-layer thin film stack of claim 1 , wherein the first and second ALD layers each have a thickness between 10 and 30 nm.
10 . The multi-layer thin film stack of claim 1 , wherein the first and second ALD layers each have a thickness between 5 and 50 nm.
11 . The multi-layer thin film stack of claim 1 , wherein the first parylene layer has a thickness between 300 nm and 1000 nm.
12 . The multi-layer thin film stack of claim 1 , further comprising:
a third ALD layer of a third metal oxide covering the second parylene layer; and
a third parylene layer covering the third ALD layer.
13 . The multi-layer thin film stack of claim 12 , further comprising:
a fourth ALD layer of a fourth metal oxide covering the third parylene layer; and
a fourth parylene layer covering the fourth ALD layer.
14 . A coated article comprising:
a substrate comprising a substrate surface; and
a thin film stack comprising:
a first ALD layer of a first metal oxide deposited on a substrate surface of a substrate;
a first parylene layer covering the first ALD layer;
a second ALD layer of a second metal oxide covering the first parylene layer; and
a second parylene layer covering the second ALD layer.
15 . (canceled)
16 . The coated corrosive sensitive article of claim 14 , wherein the first ALD layer is comprised of an alloy of two or more following metal oxide materials: aluminum oxide (Al 2 O 3 ), titanium dioxide (TiO 2 ), silicon dioxide (SiO 2 ), and zirconium oxide (ZrO 2 ).
17 . A process for forming a multi-layer thin film stack on a substrate, comprising:
depositing a first ALD layer of a first metal oxide to a substrate surface of a substrate;
depositing a first parylene layer onto a surface of the first ALD layer to cover the first ALD layer; and
depositing a second ALD layer of a second metal oxide onto a surface of the first parylene layer; and
depositing a second parylene layer onto a surface of the second ALD layer to cover the second ALD layer.
18 . The process of claim 17 , wherein the first and second parylene layers are at least one of parylene A, parylene C, parylene N, parylene D, parylene VT-4, parylene AF-4, or mixtures or derivations of parylene A, parylene C, parylene N, parylene D, parylene VT-4, parylene AF-4.
19 . The process of claim 18 , wherein the first ALD layer is comprised of an alloy of two or more following metal oxide materials: aluminum oxide (Al 2 O 3 ), titanium dioxide (TiO 2 ), silicon dioxide (SiO 2 ), and zirconium oxide (ZrO 2 ).
20 . The process of claim 17 , further comprising:
depositing a third ALD layer of a third metal oxide onto a surface of the second parylene layer; and
depositing a third parylene layer onto a surface of the third ALD layer to cover the third ALD layer.
21 . The process of claim 17 , wherein the second ALD layer is deposited at a temperature between 60-100° C.