Solar cell emitter region fabrication with differentiated P-type and N-type architectures and incorporating a multi-purpose passivation and contact layer
Methods of fabricating solar cell emitter regions with differentiated P-type and N-type architectures and incorporating a multi-purpose passivation and contact layer, and resulting solar cells, are described. In an example, a solar cell includes a substrate having a light-receiving surface and a back surface. A P-type emitter region is disposed on the back surface of the substrate. An N-type emitter region is disposed in a trench formed in the back surface of the substrate. An N-type passivation layer is disposed on the N-type emitter region. A first conductive contact structure is electrically connected to the P-type emitter region. A second conductive contact structure is electrically connected to the N-type emitter region and is in direct contact with the N-type passivation layer.
1. A solar cell, comprising:
a semiconductor substrate having a light-receiving surface and a back surface, the back surface below the light-receiving surface;
an N-type emitter region disposed on the back surface of the semiconductor substrate, wherein the N-type emitter region is a planar layer;
a P-type emitter region disposed on the back surface of the semiconductor substrate, the P-type emitter region comprising polycrystalline silicon having hydrogen therein, and the P-type emitter region electrically insulated and physically isolated from the N-type emitter region by a single dielectric material, the single dielectric material in direct physical contact with the P-type emitter region and with the N-type emitter region, and the single dielectric material confined to sidewalls of the N-type emitter region, wherein the P-type emitter region is a non-planar layer, and wherein the P-type emitter region has an uppermost surface above an uppermost surface of the N-type emitter region, and the P-type emitter region has a bottommost surface below a bottommost surface of the N-type emitter region;
a passivation layer disposed on the P-type emitter region but not on the N-type emitter region, the passivation layer comprising amorphous silicon having hydrogen therein, the passivation layer covering an entirety of a side of the P-type emitter region opposite the semiconductor substrate;
a first conductive contact structure electrically connected to and in direct contact with the N-type emitter region; and
a second conductive contact structure electrically connected to the P-type emitter region and in direct contact with the passivation layer, wherein the second conductive contact structure has an uppermost surface below the uppermost surface of the N-type emitter region, wherein the second conductive contact is physically separated from an entirety of the P-type emitter region by the passivation layer.
2. The solar cell of claim 1 , wherein a total composition of the amorphous silicon has a total hydrogen concentration approximately in the range of 5-20% of total film composition.
3. The solar cell of claim 1 , wherein the passivation layer has a thickness approximately in the range of 5-50 nanometers.
4. The solar cell of claim 1 , further comprising:
a metal seed layer on the N-type emitter region and on the P-type emitter region.
5. A back contact solar cell, comprising:
a semiconductor substrate having a light-receiving surface and a back surface, the back surface below the light-receiving surface;
an N-type polycrystalline silicon emitter region disposed on a first thin dielectric layer disposed on the back surface of the semiconductor substrate, wherein the N-type polycrystalline silicon emitter region is a planar layer;
a P-type polycrystalline silicon emitter region disposed on a second thin dielectric layer disposed in a trench formed in the back surface of the semiconductor substrate, the P-type polycrystalline silicon emitter region having hydrogen therein, and the P-type polycrystalline silicon emitter region electrically insulated and physically isolated from the N-type polycrystalline silicon emitter region by a single third thin dielectric layer disposed laterally directly between and in physical contact with both the N-type and the P-type polycrystalline silicon emitter regions, and the single third thin dielectric layer confined to sidewalls of the N-type polycrystalline silicon emitter region, wherein the P-type polycrystalline silicon emitter region is a non-planar layer, and wherein the P-type polycrystalline silicon emitter region has an uppermost surface above an uppermost surface of the N-type polycrystalline silicon emitter region, and the P-type emitter polycrystalline silicon region has a bottommost surface below a bottommost surface of the N-type polycrystalline silicon emitter region;
a P-type silicon layer disposed on the P-type polycrystalline silicon emitter region but not on the N-type polycrystalline silicon emitter region, the P-type silicon layer comprising amorphous silicon having hydrogen therein, the P-type silicon layer covering an entirety of a side of the P-type polycrystalline silicon emitter region opposite the semiconductor substrate;
a first conductive contact structure electrically connected to and in direct contact with the N-type polycrystalline silicon emitter region; and
a second conductive contact structure electrically connected to the P-type polycrystalline silicon emitter region and in direct contact with the P-type silicon layer, wherein the second conductive contact structure has an uppermost surface below the uppermost surface of the N-type polycrystalline silicon emitter region, wherein the second conductive contact is physically separated from an entirety of the P-type polycrystalline silicon emitter region by the P-type silicon layer.
6. The back contact solar cell of claim 5 , wherein the P-type silicon layer is further disposed over, but not in contact with, the N-type polycrystalline silicon emitter region.
7. The back contact solar cell of claim 5 , wherein a total composition of the amorphous silicon has a total hydrogen concentration approximately in the range of 5-20% of total film composition.
8. The back contact solar cell of claim 5 , wherein the P-type silicon layer has a thickness approximately in the range of 5-50 nanometers.
9. The back contact solar cell of claim 8 , wherein the P-type polycrystalline silicon emitter region has a thickness of approximately 30 nanometers, and the P-type silicon layer has a thickness of approximately 20 nanometers.
10. The back contact solar cell of claim 5 , further comprising:
an insulator layer disposed on the N-type polycrystalline silicon emitter region, wherein the first conductive contact structure is disposed through the insulator layer, and wherein a portion of the P-type polycrystalline silicon emitter region and a portion of the P-type silicon layer overlap the insulator layer.
11. The back contact solar cell of claim 5 , wherein the trench has a texturized surface.
12. The back contact solar cell of claim 5 , further comprising:
a fourth thin dielectric layer disposed on the light-receiving surface of the semiconductor substrate;
a polycrystalline silicon layer disposed on the fourth thin dielectric layer; and
an anti-reflective coating (ARC) layer disposed on the polycrystalline silicon layer.
13. The back contact solar cell of claim 5 , wherein the semiconductor substrate is a P-type monocrystalline silicon substrate, and wherein all of the first, second and third thin dielectric layers comprise silicon dioxide.
14. The solar cell of claim 5 , further comprising:
a metal seed layer on the N-type polycrystalline silicon emitter region and on the P-type polycrystalline silicon emitter region.
15. A solar cell, comprising:
a semiconductor substrate having a light-receiving surface and a back surface, the back surface below the light-receiving surface;
an N-type emitter region disposed on the back surface of the semiconductor substrate, wherein the N-type emitter region is a planar layer;
a P-type emitter region disposed on the back surface of the semiconductor substrate, the P-type emitter region comprising polycrystalline silicon having hydrogen therein, and the P-type emitter region electrically insulated and physically isolated from the N-type emitter region by a single third thin dielectric layer disposed laterally directly between the N-type and P-type emitter regions, the single third thin dielectric layer in direct physical contact with the P-type emitter region and with the N-type emitter region, and the single third thin dielectric layer confined to sidewalls of the N-type emitter region, wherein the P-type emitter region is a non-planar layer, and wherein the P-type emitter region has an uppermost surface above an uppermost surface of the N-type emitter region, and the P-type emitter region has a bottommost surface below a bottommost surface of the N-type emitter region;
a passivation layer disposed on the P-type emitter region but not on the N-type emitter region, the passivation layer comprising amorphous silicon having hydrogen therein, the passivation layer covering an entirety of a side of the P-type emitter region opposite the semiconductor substrate;
a first conductive contact structure electrically connected to and in direct contact with the N-type emitter region; and
a second conductive contact structure electrically connected to the P-type emitter region and in direct contact with the passivation layer, wherein the second conductive contact structure has an uppermost surface below the uppermost surface of the N-type emitter region, wherein the second conductive contact is physically separated from an entirety of the P-type emitter region by the passivation layer.
16. The solar cell of claim 15 , wherein the passivation layer is a P-type amorphous silicon layer.
17. The solar cell of claim 15 , wherein a total composition of the amorphous silicon has a total hydrogen concentration approximately in the range of 5-20% of total film composition.
18. The solar cell of claim 15 , further comprising:
a metal seed layer on the N-type emitter region and on the P-type emitter region.