SiC powder, SiC sintered body, SiC slurry and manufacturing method of the same
A method of manufacturing a silicon carbide (SiC) sintered body and a SiC sintered body obtained by the method are provided. The method includes: preparing a composite powder by subjecting a SiC raw material and a sintering aid raw material to mechanical alloying; and sintering the composite powder, wherein the sintering aid is at least one selected from the group consisting of an Al—C-based material, an Al—B—C-based material, and a B—C-based material. Accordingly, a SiC sintered body that can be sintered at low temperature, can be densified, and has high strength and high electrical conductivity can be prepared.
1. A silicon carbide (SiC) sintered body, comprising:
a sintering aid,
wherein
the sintering aid includes Al,
the SiC sintered body contains 1.17 to 4.38 wt % Al in grains thereof, and
the SiC sintered body has a specific resistance of 1 to 10 −4 Ω·cm.
2. The SiC sintered body of claim 1 , wherein the SiC sintered body further contains 0.1 wt % or more of B in the grains thereof.
3. A SiC slurry, comprising:
a SiC composite powder; and
a dispersant,
wherein the content of the dispersant is 0.5 to 2 wt % relative to 100 wt % of the SiC composite powder,
wherein the SiC composite powder includes a sintering aid,
wherein the sintering aid includes Al, the SiC composite powder contains 1.17 to 4.38 wt % Al in grains, and the SiC composite powder has a specific resistance of 1 to 10 −4 Ω·cm.
4. The SiC slurry of claim 3 , wherein the dispersant is polyethyleneimine (PEI) or tetramethyl ammonium hydroxide (TMAH).
5. The SiC slurry of claim 3 , wherein
the SiC composite powder comprises a sintering aid, and
the sintering aid is at least one selected from the group consisting of an Al—C-based material and an Al—B—C-based material.
6. The SiC slurry of claim 5 , wherein the content of the sintering aid exceeds 0, but is not higher than 13 wt %, relative to 100 wt % of the SiC composite powder.