Semiconductor apparatus
A semiconductor apparatus is provided, including a power semiconductor element, a cutoff condition detection portion which detects whether a predetermined cutoff condition is met, a reset portion which outputs a reset signal that instructs to reset during a predetermined period in response to an input of the control signal turning the power semiconductor element on, a latch portion which is reset in response to the reset signal and latches that an occurrence of the cutoff condition is detected after the reset, a cutoff circuit which controls the gate of the power semiconductor element to be at an OFF potential in response to the latching of the occurrence of the cutoff condition by the latch portion, and a prevention circuit which prevents the gate of the power semiconductor element from being at an ON potential during a period of reset of the latch portion even if the cutoff condition is met.
1. A semiconductor apparatus, comprising:
a power semiconductor element in which a gate is controlled in response to a control signal;
a cutoff condition detection portion which detects whether a predetermined cutoff condition is met;
a reset portion which outputs, in response to an input of a control signal that turns the power semiconductor element on, a reset signal that instructs to reset during a predetermined period;
a latch portion which is reset in response to the reset signal and latches that an occurrence of the cutoff condition is detected after the reset;
a cutoff circuit which controls the gate of the power semiconductor element to be at an OFF potential in response to latching of the occurrence of the cutoff condition by the latch portion; and
a prevention circuit which prevents the gate of the power semiconductor element from being at an ON potential during a period of reset of the latch portion even if the cutoff condition is met.
2. The semiconductor apparatus according to claim 1 , wherein
the prevention circuit controls the gate of the power semiconductor element to be at an OFF potential during a period when the reset portion outputs the reset signal.
3. The semiconductor apparatus according to claim 1 , wherein
the prevention circuit controls the gate of the power semiconductor element to be at an OFF potential during a period when the cutoff condition detection portion detects an occurrence of the cutoff condition.
4. The semiconductor apparatus according to claim 1 , wherein
the cutoff circuit and the prevention circuit electrically connect the gate and an emitter of the power semiconductor element respectively and make the gate of the power semiconductor element be at an OFF potential.
5. The semiconductor apparatus according to claim 1 , wherein
the prevention circuit controls the gate of the power semiconductor element to be at an OFF potential in response to a logic sum of a cutoff signal and the reset signal, the cutoff signal being output from the latch portion and instructing to control the gate of the power semiconductor element to be at an OFF potential.
6. The semiconductor apparatus according to claim 5 , wherein
the prevention circuit has a logic sum circuit and supplies an operated logic sum to the cutoff circuit.
7. The semiconductor apparatus according to claim 1 , wherein
the prevention circuit controls the gate of the power semiconductor element to be at an OFF potential in response to a logic sum of a cutoff signal and a detection signal, the cutoff signal being output from the latch portion and instructing to control the gate of the power semiconductor element to be at an OFF potential, the detection signal being output by the cutoff condition detection portion when detecting an occurrence of the cutoff condition.
8. The semiconductor apparatus according to claim 1 , wherein
the latch portion keeps the control signal in a latched value as an operation power source.
9. The semiconductor apparatus according to claim 1 , wherein
at least one of the cutoff condition detection portion and the reset portion uses the control signal as an operation power source.
10. The semiconductor apparatus according to claim 1 , wherein
the cutoff condition detection portion determines that the cutoff condition is met in response to the power semiconductor element heated to a temperature equal to or greater than a reference temperature.
11. The semiconductor apparatus according to claim 1 , wherein
the power semiconductor element has a collector terminal which is provided on a first surface side of a substrate, a gate terminal and an emitter terminal which are provided on a second surface side of the substrate, and
the cutoff circuit has a drain element and a source terminal which are provided on the second surface side of the substrate.
12. The semiconductor apparatus according to claim 1 , wherein
the power semiconductor element is an IGBT (insulated gate bipolar transistor) or a vertical MOSFET.
13. The semiconductor apparatus according to claim 1 , wherein
the semiconductor apparatus is an igniter which controls current flowing through an ignition coil in response to a control signal from outside.