IP Library Granted Patent US 10,128,417
Granted Patent B2
US 10,128,417 · App. 15/368,334 · Granted Nov 13, 2018

Quantum dot based color conversion layer in display devices

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Quick Facts
Patent No.
US 10,128,417
App. No.
15/368,334
Granted
Nov 13, 2018
Kind
B2
Abstract

Embodiments of a display device including barrier layer coated quantum dots and a method of making the barrier layer coated quantum dots are described. Each of the barrier layer coated quantum dots includes a core-shell structure and a hydrophobic barrier layer disposed on the core-shell structure. The hydrophobic barrier layer is configured to provide a distance between the core-shell structure of one of the quantum dots with the core-shell structures of other quantum dots that are in substantial contact with the one of the quantum dots. The method for making the barrier layer coated quantum dots includes forming reverse micro-micelles using surfactants and incorporating quantum dots into the reverse micro-micelles. The method further includes individually coating the incorporated quantum dots with a barrier layer and isolating the barrier layer coated quantum dots with the surfactants of the reverse micro-micelles disposed on the barrier layer.

Claims (78)

1. A quantum dot film comprising:

barrier layer coated quantum dots, each of the barrier layer coated quantum dots including:

a quantum dot that comprises a core-shell structure having a core and a shell surrounding the core, and

an optically transparent barrier layer, disposed on the quantum dot, configured to provide a spacing between adjacent quantum dots to prevent aggregation of the adjacent quantum dots; and

a matrix material configured to house the barrier layer coated quantum dots and be in substantial contact with the optically transparent barrier layer,

wherein the barrier layer coated quantum dots exhibit a quantum yield greater than about 80%, wherein:

the core comprises a first material;

the shell comprises a second material;

the optically transparent barrier layer comprises a third material; and

the first, second, and third materials are different from each other; and

wherein the quantum dot film has a thickness in a range from about 70 μm to about 40 μm.

2. The quantum dot film of claim 1 , wherein the optically transparent barrier layer is hydrophobic.

3. The quantum dot film of claim 1 , wherein the spacing is equal or greater than a Forster radius between adjacent barrier layer coated quantum dots.

4. The quantum dot film of claim 1 , wherein the optically transparent barrier layer comprises an oxide.

5. The quantum dot film of claim 1 , wherein the optically transparent barrier layer comprises silicon oxide.

6. The quantum dot film of claim 1 , further comprising surfactants or ligands bonded to the optically transparent barrier layer.

7. The quantum dot film of claim 1 , wherein the quantum dot film exhibits an external quantum efficiency greater than about 50% after being treated at a temperature greater than 200° C.

8. The quantum dot film of claim 1 , wherein the quantum dot film comprises:

an optical density greater than about 0.24; and

an external quantum efficiency greater than about 50%.

9. The quantum dot film of claim 1 , wherein the barrier layer coated quantum dots have an average size ranging from about 20 nm to about 40 nm in diameter.

10. The quantum dot film of claim 1 , wherein the optically transparent barrier layer have a thickness ranging from about 8 nm to about 20 nm.

11. The quantum dot film of claim 1 , wherein the matrix material comprises an extrudable material.

12. The quantum dot film of claim 1 , wherein the matrix material comprises a brightness enhancement film.

13. The quantum dot film of claim 1 , wherein the matrix material comprises a polymer plastic film.

14. A quantum dot film comprising:

barrier layer coated quantum dots, each of the barrier layer coated quantum dots including:

a quantum dot, and

an optically transparent barrier layer, disposed on the quantum dot, configured to provide a spacing between adjacent quantum dots to prevent aggregation of the adjacent quantum dots; and

a matrix material configured to house the barrier layer coated quantum dots and be in substantial contact with the optically transparent barrier layer,

wherein the barrier layer coated quantum dots exhibit a quantum yield greater than about 80%,

wherein the quantum dot film exhibits an external quantum efficiency greater than about 50% after being treated at a temperature greater than 200° C.

15. The quantum dot film of claim 14 , wherein the optically transparent barrier layer is hydrophobic.

16. The quantum dot film of claim 14 , wherein the spacing is equal or greater than a Forster radius between adjacent barrier layer coated quantum dots.

17. The quantum dot film of claim 14 , wherein the quantum dot of each of the barrier layer coated quantum dots comprises a core-shell structure having a core and a shell surrounding the core.

18. The quantum dot film of claim 17 , wherein:

the core comprises a first material;

the shell comprises a second material;

the optically transparent barrier layer comprises a third material; and

the first, second, and third materials are different from each other.

19. The quantum dot film of claim 14 , wherein the optically transparent barrier layer comprises an oxide.

20. The quantum dot film of claim 14 , wherein the optically transparent barrier layer comprises silicon oxide.

21. The quantum dot film of claim 14 , further comprising surfactants or ligands bonded to the optically transparent barrier layer.

22. The quantum dot film of claim 14 , wherein the quantum dot film comprises:

an optical density greater than about 0.24; and

an external quantum efficiency greater than about 50%.

23. The quantum dot film of claim 14 , wherein the barrier layer coated quantum dots have an average size ranging from about 20 nm to about 40 nm in diameter.

24. The quantum dot film of claim 14 , wherein the optically transparent barrier layer have a thickness ranging from about 8 nm to about 20 nm.

25. The quantum dot film of claim 14 , wherein the matrix material comprises an extrudable material.

26. The quantum dot film of claim 14 , wherein the matrix material comprises a brightness enhancement film.

27. The quantum dot film of claim 14 , wherein the matrix material comprises a polymer plastic film.

28. The quantum dot film of claim 14 , has a thickness in a range from about 70 μm to about 40 μm.

29. A quantum dot film comprising:

barrier layer coated quantum dots, each of the barrier layer coated quantum dots including:

a quantum dot, and

an optically transparent barrier layer, disposed on the quantum dot, configured to provide a spacing between adjacent quantum dots to prevent aggregation of the adjacent quantum dots; and

a matrix material configured to house the barrier layer coated quantum dots and be in substantial contact with the optically transparent barrier layer,

wherein the barrier layer coated quantum dots exhibit a quantum yield greater than about 80%,

wherein the quantum dot film comprises:

an optical density greater than about 0.24; and

an external quantum efficiency greater than about 50%.

30. The quantum dot film of claim 29 , wherein the optically transparent barrier layer is hydrophobic.

31. The quantum dot film of claim 29 , wherein the spacing is equal or greater than a Forster radius between adjacent barrier layer coated quantum dots.

32. The quantum dot film of claim 29 , wherein the quantum dot of each of the barrier layer coated quantum dots comprises a core-shell structure having a core and a shell surrounding the core.

33. The quantum dot film of claim 32 , wherein:

the core comprises a first material;

the shell comprises a second material;

the optically transparent barrier layer comprises a third material; and

the first, second, and third materials are different from each other.

34. The quantum dot film of claim 29 , wherein the optically transparent barrier layer comprises an oxide.

35. The quantum dot film of claim 29 , wherein the optically transparent barrier layer comprises silicon oxide.

36. The quantum dot film of claim 29 , further comprising surfactants or ligands bonded to the optically transparent barrier layer.

37. The quantum dot film of claim 29 , wherein the barrier layer coated quantum dots have an average size ranging from about 20 nm to about 40 nm in diameter.

38. The quantum dot film of claim 29 , wherein the optically transparent barrier layer have a thickness ranging from about 8 nm to about 20 nm.

39. The quantum dot film of claim 29 , wherein the matrix material comprises an extrudable material.

40. The quantum dot film of claim 29 , wherein the matrix material comprises a brightness enhancement film.

41. The quantum dot film of claim 29 , wherein the matrix material comprises a polymer plastic film.

42. The quantum dot film of claim 29 , has a thickness in a range from about 70 μm to about 40 μm.

Assignments (7)
CORRECTIVE ASSIGNMENT TO CORRECT THE ADDRESS OF THE ASSIGNEE TO BE: 2-1-1, NISHI-SHINJUKU SHINJUKU-KU TOKYO, JAPAN 163-0043 PREVIOUSLY RECORDED AT REEL: 065114 FRAME: 0769. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded Oct 9, 2023
From: NANOSYS, INC.
To: SHOEI CHEMICAL INC.
Reel/Frame 065271/0540 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 3, 2023
From: NANOSYS, INC.
To: SHOEI CHEMICAL INC.
Reel/Frame 065114/0769 →
TERMINATION AND RELEASE OF PATENT SECURITY AGREEMENT RECORDED AT REEL 059569 / FRAME 0840 Recorded Sep 7, 2023
From: FORTRESS CREDIT CORP.,
To: NANOSYS, INC.
Reel/Frame 064836/0263 →
SECURITY INTEREST Recorded Apr 1, 2022
From: NANOSYS, INC.
To: FORTRESS CREDIT CORP., AS AGENT
Reel/Frame 059569/0840 →
RELEASE OF SECURITY INTEREST IN INTELLECTUAL PROPERTY COLLATERAL AT REEL/FRAME NO. 49170/0482 Recorded Jul 1, 2021
From: OCEAN II PLO, LLC, AS AGENT
To: NANOSYS, INC.
Reel/Frame 056752/0073 →
SECURITY INTEREST Recorded Jan 17, 2019
From: NANOSYS, INC.
To: OCEAN II PLO, LLC
Reel/Frame 049170/0482 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 24, 2017
From: HARTLOVE, JASON; HARDEV, VEERAL; KAN, SHIHAI; CHEN, JIAN; YAMANAGA, JAY; IPPEN, CHRISTIAN; GUO, WENZHUO; HOTZ, CHARLES; WILSON, ROBERT
To: NANOSYS, INC.
Reel/Frame 043076/0878 →