Particle reduction in a physical vapor deposition chamber
Methods and apparatus for reducing particles generated in a process carried out in a process chamber are provided herein. In some embodiments, a process kit shield includes: a body having a surface facing a processing volume of a physical vapor deposition (PVD) process chamber, wherein the body is composed of aluminum oxide (Al 2 O 3 ); and a silicon nitride layer on the surface of the body.
1. A process kit shield for depositing an amorphous silicon material, comprising:
a body having a surface facing a processing volume of a physical vapor deposition (PVD) process chamber, wherein the body is composed of aluminum oxide (Al 2 O 3 ); and
a silicon nitride layer on the surface of the body.
2. The process kit shield of claim 1 , further comprising an amorphous silicon layer on the silicon nitride layer.
3. The process kit shield of claim 2 , wherein a ratio of a first thickness of the silicon nitride layer to a second thickness of the amorphous silicon layer is about 1:3.
4. The process kit shield of claim 2 , wherein the body comprises a third layer of repeating, alternating layers of the silicon nitride layer and the amorphous silicon layer having a predetermined third thickness.
5. A physical vapor deposition (PVD) process chamber for depositing an amorphous silicon material, comprising:
a process kit shield comprising a body having a surface facing a processing volume of the physical vapor deposition (PVD) process chamber, wherein the body is composed of aluminum oxide (Al 2 O 3 );
a silicon nitride layer having a first thickness on the surface of the body; and
an amorphous silicon layer having a second thickness on the silicon nitride layer;
a substrate support pedestal disposed in the process chamber beneath the processing volume; and
a target disposed opposite the substrate support pedestal.
6. The physical vapor deposition (PVD) process chamber of claim 5 , wherein a ratio of the first thickness of the silicon nitride layer to the second thickness of the amorphous silicon layer is about 1:3.
7. The physical vapor deposition (PVD) process chamber of claim 5 , wherein the body comprises a third layer of repeating, alternating layers of the silicon nitride layer and the amorphous silicon layer having a predetermined third thickness.
8. A method of processing a substrate in a physical vapor deposition (PVD) process chamber, comprising:
(a) depositing a silicon nitride layer atop a surface of a process kit shield facing a processing volume of the PVD process chamber, wherein the process kit shield comprises a body composed of aluminum oxide (Al 2 O 3 ), and wherein the silicon nitride layer is deposited without a substrate disposed in the PVD process chamber; and
(b) subsequently depositing an amorphous silicon layer onto a predetermined number of substrates in the PVD process chamber, wherein amorphous silicon material also forms an amorphous silicon layer on the silicon nitride layer.
9. The method of claim 8 , further comprising:
(c) repeating (a)-(b) to form repeating, alternating layers of the silicon nitride layer and the amorphous silicon layer having a third thickness.
10. The method of claim 8 , wherein depositing the silicon nitride layer further comprises:
forming a plasma from a first process gas within a processing volume of the physical vapor deposition (PVD) process chamber, wherein the first process gas comprises a noble gas and a nitrogen (N 2 ) gas to sputter silicon from a surface of a target within the processing volume of the physical vapor deposition (PVD) process chamber.
11. The method of claim 10 , wherein the noble gas is provided at a flow rate of about 50 to about 200 sccm.
12. The method of claim 10 , wherein the nitrogen (N 2 ) gas is provided at a flow rate of about 50 to about 1000 sccm.
13. The method of claim 10 , wherein the first process gas has a ratio of nitrogen (N 2 ) gas to noble gas of about 4:1.
14. The method of claim 8 , wherein depositing the amorphous silicon layer further comprises:
forming a plasma from a second process gas within a processing volume of the physical vapor deposition (PVD) process chamber, wherein the second process gas comprises a noble gas and a hydrogen (H 2 ) gas to sputter silicon from a surface of a target within the processing volume of the physical vapor deposition (PVD) process chamber.
15. The method of claim 14 , wherein the noble gas is provided at a flow rate of about 50 to about 1000 sccm.
16. The method of claim 14 , wherein the hydrogen (H 2 ) gas is provided at a flow rate of about 2 to about 100 sccm.
17. The method of claim 14 , wherein the second process gas has a ratio of hydrogen (H 2 ) gas to noble gas of about 0:1 to about 1:1.
18. The method of claim 8 , wherein a pressure in the processing volume of the physical vapor deposition (PVD) process chamber during deposition of the silicon nitride layer is about 3 to about 5 millitorr.
19. The method of claim 8 , wherein a temperature in the processing volume of the physical vapor deposition (PVD) process chamber during deposition of the silicon nitride layer is about 25 to about 400 degrees Celsius.
20. The method of claim 8 , wherein a ratio of a first thickness of the silicon nitride layer to a second thickness of the amorphous silicon layer is about 1:3.