High precision capacitors
High precision capacitors and methods for forming the same utilizing a precise and highly conformal deposition process for depositing an insulating layer on substrates of various roughness and composition. The method generally comprises the steps of depositing a first insulating layer on a metal substrate by atomic layer deposition (ALD); (b) forming a first capacitor electrode on the first insulating layer; and (c) forming a second insulating layer on the first insulating layer and on or adjacent to the first capacitor electrode. Embodiments provide an improved deposition process that produces a highly conformal insulating layer on a wide range of substrates, and thereby, an improved capacitor.
1. A capacitor, comprising:
a. a metal substrate comprising a foil or sheet of stainless steel, molybdenum, copper or aluminum, said metal substrate further comprising a barrier layer thereon;
b. a first insulating layer on said metal substrate, said first insulating layer having a substantially uniform thickness of from 3 Å to 200 Å and a predetermined breakdown voltage;
c. a first capacitor electrode on said first insulating layer, wherein said first capacitor electrode (i) has an uppermost surface that is smooth and/or curved, and (ii) is capacitively coupled to said metal substrate;
d. a second insulating layer on said first capacitor electrode and said first insulating layer; and
e. an antenna on said second insulating layer, electrically connected to said first capacitor electrode and to said metal substrate.
2. The capacitor of claim 1 , wherein said metal substrate comprises a foil having a thickness from about 1 μm to about 300 μm, and said second insulating layer has a thickness of from 20 Å to 400 Å.
3. The capacitor of claim 1 , wherein said barrier layer comprises an organic and/or an inorganic dielectric material.
4. The capacitor of claim 3 , wherein said organic dielectric material comprises a polyimide, a polyacrylate, a polyether sulfone, a polyethylene naphthalate, or a polyether ether ketone, and said inorganic dielectric material comprises SiO 2 , Si 3 N 4 , a silicon oxynitride, Al 2 O 3 , an aluminosilicate, TiO 2 , HfO 2 , or a combination thereof.
5. The capacitor of claim 1 , wherein each of said first and second insulating layers independently comprises SiO 2 , Si 3 N 4 , a silicon oxynitride, Al 2 O 3 , SiOC, SiOCH, or HfO 2 .
6. The capacitor of claim 1 , wherein said first insulating layer is deposited by atomic layer deposition.
7. The capacitor of claim 6 , wherein said first insulating layer has a thickness from about 20 Å to about 200 Å.
8. The capacitor of claim 7 , wherein said first insulating layer has a thickness from about 40 Å to about 100 Å.
9. The capacitor of claim 1 , wherein said first capacitor electrode comprises a first conductive or semiconductive layer.
10. The capacitor of claim 9 , wherein said first conductive layer comprises a metal, a metal alloy, a conductive metal compound or a doped semiconductor.
11. The capacitor of claim 10 , wherein said metal comprises Al, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Re, Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, Au, Zn, Cd, or a combination thereof.
12. The capacitor of claim 1 , wherein said first capacitor electrode comprises a printed first conductive layer.
13. The capacitor of claim 1 , wherein said first capacitor has a dome-shaped cross-sectional profile.
14. The capacitor of claim 1 , wherein said second insulating layer comprises a printed insulating layer.
15. The capacitor of claim 1 , wherein said metal substrate comprises a lower capacitor electrode and said first capacitor electrode comprises an upper capacitor electrode.
16. The capacitor of claim 1 , wherein said first insulating layer includes an opening.
17. The capacitor of claim 1 , wherein said opening is configured to expose said metal substrate, and said antenna has an end in contact with said exposed metal substrate.
18. The capacitor of claim 1 , wherein said antenna comprises a printed antenna.
19. The capacitor of claim 18 , wherein said printed antenna comprises a first end in contact with said first capacitor electrode and (ii) a second end in contact with said metal substrate.
20. The capacitor of claim 1 , wherein the thickness of the first insulating layer varies by no more than ±5%.