Semiconductor memory device in which an array chip including three-dimensionally disposed memory cells bonded to a control circuit chip
According to one embodiment, the array chip includes a three-dimensionally disposed plurality of memory cells and a memory-side interconnection layer connected to the memory cells. The circuit chip includes a substrate, a control circuit provided on the substrate, and a circuit-side interconnection layer provided on the control circuit and connected to the control circuit. The circuit chip is stuck to the array chip with the circuit-side interconnection layer facing to the memory-side interconnection layer. The bonding metal is provided between the memory-side interconnection layer and the circuit-side interconnection layer. The bonding metal is bonded to the memory-side interconnection layer and the circuit-side interconnection layer.
1. A semiconductor memory device comprising:
a first structure including a substrate, a control circuit disposed on the substrate, and a first interconnection disposed on the control circuit; and
a second structure disposed on the first structure, the second structure including a second interconnection, a bit line, a semiconductor body, a plurality of conductive layers configured as word lines, and a charge storage portion, the second interconnection electrically connected to the first interconnection, the bit line connected to the second interconnection, the bit line being disposed between the first structure and the conductive layers, the semiconductor body connected to the bit line and extending in a first direction perpendicular to the substrate, the conductive layers arrayed stacked in the first direction, the charge storage portion disposed between one of the conductive layers and the semiconductor body.
2. The device according to claim 1 , wherein
the first structure includes a third interconnection disposed in same layer as the first interconnection, and
the second structure includes a via electrically connected to the third interconnection and penetrating through the second structure.
3. The device according to claim 2 , wherein the via includes a pad at an upper side.
4. The device according to claim 1 , wherein the first structure is attached to the second structure with an insulating film interposed.
5. The device according to claim 4 , further comprising a bonding metal directly connected to the first interconnection and the second interconnection, the insulating film provided around the bonding metal.
6. The device according to claim 1 , further comprising a bonding metal directly connected to the first interconnection and the second interconnection.
7. The device according to claim 6 , wherein the bonding metal is copper or copper alloy containing copper as a main component.
8. A semiconductor memory device comprising:
a substrate;
a control circuit disposed on the substrate;
a first interconnection disposed on the control circuit;
a second interconnection disposed on the first interconnection and electrically connected to the first interconnection;
a bit line connected to the second interconnection;
a semiconductor body connected to the bit line and extending in a first direction perpendicular to the substrate;
a plurality of conductive layers configured as word lines stacked in the first direction; and
a charge storage portion disposed between one of the conductive layers and the semiconductor body,
the bit line being disposed between the first interconnection and the conductive layers.
9. The device according to claim 8 , further comprising
a third interconnection disposed in same layer as the first interconnection, and
a via extending in the first direction and electrically connected to the third interconnection.
10. The device according to claim 9 , wherein the via includes a pad at an upper side.
11. The device according to claim 8 , wherein the first interconnection is attached to the second interconnection with an insulating film interposed.
12. The device according to claim 11 , further comprising a bonding metal directly connected to the first interconnection and the second interconnection, the insulating film provided around the bonding metal.
13. The device according to claim 8 , further comprising a bonding metal directly connected to the first interconnection and the second interconnection.
14. The device according to claim 13 , wherein the bonding metal is copper or copper alloy containing copper as a main component.