Thin-film transistor
According to one embodiment, a thin-film transistor includes a first insulating film, an oxide semiconductor layer provided on the first insulating film and a second insulating film provided on the oxide semiconductor layer, and at least one of the first insulating film and the second insulating film includes a first region in contact with the oxide semiconductor layer and a second region further distant from the oxide semiconductor layer than the first region, and the second region has an argon concentration higher than that of the first region.
1. A thin-film transistor comprising:
a first insulating film;
an oxide semiconductor layer provided on the first insulating film; and
a second insulating film provided on the oxide semiconductor layer;
at least one of the first insulating film and the second insulating film containing argon and comprising a first region in contact with the oxide semiconductor layer and a second region further distant from the oxide semiconductor layer than the first region, and the second region having an argon concentration higher than that of the first region.
2. The thin-film transistor of claim 1 , wherein
in at least one of the first insulating film and the second insulating film, a thickness of the first region is less than that of the second region.
3. The thin-film transistor of claim 2 , wherein
the thickness of the first region is ⅙ to ⅓ of that of the second region.
4. The thin-film transistor of claim 1 , wherein
at least one of the first insulating film and the second insulating film comprises the first region and the second region and contains nitrogen, and
a concentration of nitrogen contained in the first region is higher than that in the second region.
5. The thin-film transistor of claim 1 , wherein
a film density of the first region is less than that of the second region.
6. The thin-film transistor of claim 1 , wherein
a boundary between the first region and the second region contains fluoride.
7. The thin-film transistor of claim 1 , wherein
the oxide semiconductor layer is formed of an oxide containing at least one of indium, gallium, zinc and tin.
8. The thin-film transistor of claim 1 , wherein
the first region and the second region are formed of silicon oxide.
9. The thin-film transistor of claim 1 , wherein
the first insulating film and the second insulating film are formed of silicon oxide and are in contact with the oxide semiconductor layer.
10. The thin-film transistor of claim 1 , further comprising:
a substrate;
a gate electrode located between the substrate and the first insulating film; and
a pair of electrodes in contact with the oxide semiconductor layer between the oxide semiconductor layer and the second insulating film, and separated from each other along a first direction.
11. A thin-film transistor comprising:
a first insulating film of silicon oxide;
a second insulating of silicon oxide; and
an oxide semiconductor layer located between the first insulating film and the second insulating film,
the first insulating film containing argon and comprising a first region and a second region of properties different from each other,
the first region being in contact with the oxide semiconductor layer,
the second region being further distant from the oxide semiconductor layer than the first region, and
a concentration of argon contained in the second region being higher than that in the first region.
12. The thin-film transistor of claim 11 , wherein
the second insulating film comprises a third region and a fourth region of properties different from each other,
the third region is in contact with the oxide semiconductor layer, and
the fourth region is further distant from the oxide semiconductor layer than the third region.
13. The thin-film transistor of claim 12 , further comprising:
a substrate;
a gate electrode located between the substrate and the first insulating film; and
a pair of electrodes in contact with the oxide semiconductor layer between the oxide semiconductor layer and the second insulating film, and separated from each other along a first direction.
14. The thin-film transistor of claim 13 , wherein
the first insulating film is in contact with the substrate and the gate electrode,
a thickness of the first region in a region where the first insulating film is in contact with the substrate is equal to that in a region where the first insulating film is in contact with the gate electrode, and
a thickness of the second region in a region where the first insulating film is in contact with the substrate is equal to that in a region where the first insulating film is in contact with the gate electrode.
15. The thin-film transistor of claim 13 , wherein
the second insulating film is in contact with the pair of electrodes,
a thickness of the third region in regions where the second insulating film is in contact with the pair of electrodes is equal to that in a region where the second insulating film is in contact with the oxide semiconductor layer, and
a thickness of the fourth region in regions where the second insulating film is in contact with the pair of electrodes is equal to that in a region where the second insulating film is in contact with the oxide semiconductor layer.
16. The thin-film transistor of claim 11 , wherein
the first insulating film contains nitrogen, and
a concentration of nitrogen contained in the first region is higher than that in the second region.
17. The thin-film transistor of claim 11 , wherein
a film density of the first region is less than that of the second region.
18. The thin-film transistor of claim 11 , wherein
at least one of the first insulating film and the second insulating film contains segregated fluoride.
19. The thin-film transistor of claim 11 , wherein
the second insulating film is covered by a silicon nitride film.