IP Library Granted Patent US 9,912,329
Granted Patent B2
US 9,912,329 · App. 15/390,020 · Granted Mar 6, 2018

Semiconductor device and driving system

Inventor: Ikuo Fukami (Tokyo, JP)
Assignee: Renesas Electronics Corporation
H03K17/08104H01L27/088H02M3/07H02P7/28H03K2217/0018
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Quick Facts
Patent No.
US 9,912,329
App. No.
15/390,020
Granted
Mar 6, 2018
Kind
B2
Abstract

A semiconductor device includes a high side driver, in which the high side driver has an output transistor configured to supply a power voltage to an output terminal based on a driving voltage applied to a gate electrode of the output transistor; a short circuit transistor configured to couple the gate electrode of the output transistor with the output terminal; and a switch transistor connected in series between the gate electrode of the output transistor and a drain electrode of the short circuit transistor. The switch transistor is controlled by a back gate of the switch transistor.

Claims (11)

1. A semiconductor device including a high side driver, the high side driver comprising:

an output transistor configured to supply a power voltage to an output terminal based on a driving voltage applied to a gate electrode of the output transistor;

a short circuit transistor configured to couple the gate electrode of the output transistor with the output terminal; and

a switch transistor connected in series between the gate electrode of the output transistor and a drain electrode of the short circuit transistor;

a back gate control circuit is configured to control the back gate of the switch transistor; and

a control logic circuit is configured to control the output transistor, the short circuit transistor and the back gate control circuit;

wherein the back gate control circuit supplies the back gate of the switch transistor with a ground voltage when the output transistor is activated.

2. A semiconductor device according to claim 1 , wherein the driving voltage is higher than the power voltage.

3. A semiconductor device according to claim 1 , wherein the output transistor is a vertical type transistor.

4. A semiconductor device according to claim 1 , wherein the back gate control circuit supplies the back gate of the switch transistor with a ground voltage when the output transistor is activated, and

wherein the back gate control circuit supplies the back gate of the switch transistor with the output voltage when the output transistor is inactivated.

Assignments (1)
CHANGE OF ADDRESS Recorded Nov 28, 2017
From: RENESAS ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 044811/0758 →
Priority Claims (1)
JP 2013-150647 · Jul 19, 2013 · national
Continuity (3)
Continuation 14806917 · Jul 23, 2015
Continuation 14327026 · Jul 9, 2014
Related Publication 20170111038A1 · Apr 20, 2017