Ion implantation modification of archwires
Techniques and methods for utilizing ion implantation to modify dental archwires are provided. An example of a method of ion implanting a wire target includes providing the wire target in an ion implant system, implanting ions into the wire target such that a color of the wire target material after the implanting exhibits a changed appearance from the color of the wire target material before the implanting, and removing the wire target from the ion implant system. An example of a copper-aluminum-nickel (CuAlNi) wire includes an ion implanted atomic species wherein a color of an implanted CuAlNi wire is white, off-white and/or silver and further wherein the implanted CuAlNi wire exhibits mechanical properties of an unimplanted CuAlNi wire.
1. A method of ion implanting a wire target comprising:
providing the wire target within a line-of-sight of an ion beam in an ion implant system;
implanting ions into the wire target with the ion beam at an ion beam energy of 10-200 keV such that a color of the wire target material after the implanting exhibits a changed appearance from the color of the wire target material before the implanting; and
removing the wire target from the ion implant system.
2. The method of claim 1 wherein the wire target is a copper-aluminum-nickel (CuAlNi) alloy.
3. The method of claim 1 wherein the implanting ions comprises implanting ions at an ion beam dose of 1E15-1E18 ions/cm 2 , an ion beam dose rate of 0.025-10 μA/cm 2 /sec, and an ion implant duration of 0.4-12 hours.
4. The method of claim 1 wherein the implanting ions comprises implanting one or more of C, CO, Si, O, F, N, B, H, or combinations thereof.
5. The method of claim 4 further comprising:
implanting carbon ions at an ion beam dose of approximately 5E16 ions/cm 2 , an ion beam dose rate of approximately 0.1 μA/cm 2 /sec, an ion implant duration of approximately one hour, and an ion beam energy of approximately 80 keV.
6. The method of claim 1 further comprising maintaining a temperature of the wire target at or below a particular temperature.
7. The method of claim 6 wherein the wire target is a shape memory alloy and the particular temperature corresponds to at least one of a transformation temperature of the wire target or a temperature below 300 degrees Celsius.
8. The method of claim 1 wherein mechanical properties of the wire target are substantially unchanged by the implanting ions into the wire target.