Memory system having a plurality of writing modes
According to one embodiment, a memory system includes a non-volatile semiconductor memory, a block management unit, and a transcription unit. The semiconductor memory includes a plurality of blocks to which data can be written in both the first mode and the second mode. The block management unit manages a block that stores therein no valid data as a free block. When the number of free blocks managed by the block management unit is smaller than or equal to a predetermined threshold value, the transcription unit selects one or more used blocks that stores therein valid data as transcription source blocks and transcribes valid data stored in the transcription source blocks to free blocks in the second mode.
1. A memory system comprising:
a nonvolatile semiconductor memory comprising a plurality of blocks, each of the blocks comprising a plurality of memory cells, each of the memory cells configured to store i-bits data, i being equal to or larger than 2; and
a controller circuit configured to perform a write operation to the nonvolatile semiconductor memory in a first mode such that each of memory cells stores only j-bits data, j being smaller than i, and the controller circuit configured to perform a write operation to the nonvolatile semiconductor memory in a second mode such that each of memory cells stores k-bits data, k being larger than j and equal to or smaller than i, wherein
the controller circuit is configured to perform the write operation in the first mode in response to a request from a host device,
the controller circuit is configured to read data from one of the blocks written in the first mode and write the read data to another one of the blocks in the second mode, as a first operation,
the controller circuit is configured to, when valid data is stored in a part of block, calculate a total amount of valid data written in the memory system based on an amount of valid data stored in each block, the valid data being data assigned to logical addresses,
the controller circuit is configured to determine whether to perform the first operation based on a result of the calculation of the total amount of the valid data, and
the controller circuit is configured to read data from one of the blocks written in the second mode and write the read data to another one of the blocks in the second mode, as a second operation.
2. The memory system according to claim 1 , wherein all of the plurality of blocks accept write operation in both of the first mode and the second mode.
3. The memory system according to claim 1 , wherein the controller circuit is configured to perform the first operation in parallel with the write operation in response to a request from a host device.
4. The memory system according to claim 1 , wherein the controller circuit is configured to perform the first operation when a command is not received from the host device for a predetermined period of time.
5. The memory system according to claim 1 , wherein the controller circuit is configured to perform the first operation using only a part of the blocks written in the first mode.
6. A memory system comprising:
a nonvolatile semiconductor memory comprising a plurality of blocks, each of the blocks comprising a plurality of memory cells, each of the memory cells configured to store i-bits data, i being equal to or larger than 2, and
a controller circuit configured to perform a write operation to the nonvolatile semiconductor memory in a first mode such that each of memory cells stores only j-bits data, j being smaller than i, and the controller circuit configured to perform a write operation to the nonvolatile semiconductor memory in a second mode such that each of memory cells stores k-bits data, k being larger than j and equal to or smaller than i, wherein
the controller circuit is configured to write a plurality of pieces of first data to first blocks of the blocks in the first mode in response to one or more first requests from a host device,
the controller circuit is configured to perform a first operation for releasing the first blocks as free blocks, the first operation including reading the plurality of pieces of first data from the first blocks and writing the plurality of pieces of read first data to a second block of the blocks in the second mode, each of the plurality of pieces of read first data being written to a second block in the second mode only with one or more other pieces of read first data,
the controller circuit is configured to write a plurality of pieces of second data to third blocks of the blocks in the second mode, and
the controller circuit is configured to perform a second operation for releasing the third blocks as free blocks, the second operation including reading the plurality of pieces of second data from the plurality of third blocks and writing the plurality of pieces of read second data to a single fourth block of the blocks in the second mode.
7. The memory system of claim 6 , wherein the controller circuit is configured to perform the first operation with a higher priority over the second operation.
8. The memory system of claim 6 , wherein
the controller circuit is configured to write the plurality of pieces of second data to fifth blocks of the blocks in the first mode in response to one or more second requests from the host device before the writing the plurality of pieces of second data to the third blocks, and
the controller circuit is configured to read the plurality of pieces of second data from the fifth blocks and write the read plurality of pieces of second data to the third blocks.