Semiconductor device

1. A semiconductor device comprising:

a through via formed to penetrate a semiconductor substrate;

a first buffer circuit and a second buffer circuit;

a wiring forming layer formed in an upper layer of the semiconductor substrate;

a connecting wiring portion formed in an upper portion of the through via, wherein a direction from the semiconductor substrate to the wiring forming layer is an upward direction, the connecting wiring portion being formed on a chip inner end face that faces the upper portion of the semiconductor substrate at an end face of the through via;

a first path connecting the first buffer circuit and the through via;

a second path connecting the second buffer circuit and the through via; and

a test circuit that outputs a test result signal indicating an occurrence of a disconnection in the connecting wiring portion, based on a fact that a voltage of the first path and a voltage of the second path have different voltage values,

wherein the first path and the second path are electrically connected via the connecting wiring portion and one of the first and second buffer circuits causes a current to flow to the other of the first and second buffer circuits through the connecting wiring portion,

wherein the first buffer circuit includes a first PMOS transistor and a first impedance element, the first PMOS transistor and the first impedance element being connected in series between a first power supply and the first path,

wherein the second buffer circuit includes a first NMOS transistor and a second impedance element, the first NMOS transistor and the second impedance element being connected in series between a second power supply and the second path, and

wherein the semiconductor device further comprises a control circuit that controls the first PMOS transistor and the first NMOS transistor to be simultaneously brought into a conduction state in a process of checking a disconnection of the connecting wiring portion.

2. The semiconductor device according to claim 1 , wherein the connecting wiring portion is a wiring region formed with an area equal to or smaller than an area of the chip inner end face of the through via.

3. The semiconductor device according to claim 1 , wherein

the connecting wiring portion corresponds to the chip inner end face,

one end of the first path is connected to the chip inner end face of the through via, and

one end of the second path is connected to the chip inner end face of the through via.

4. The semiconductor device according to claim 3 , wherein each of the first and second paths includes:

a via connecting line connected to the through via; and

at least one upper layer line connected to the via connecting line through a via in a region other than the upper portion of the chip inner end face.

5. The semiconductor device according to claim 3 , wherein each of the first and second paths includes:

a via connecting line connected to the through via; and

at least one upper layer line connected to the via connecting line through a via in the upper portion of the chip inner end face.

6. The semiconductor device according to claim 1 , wherein

the connecting wiring portion includes a via connecting line formed in contact with the chip inner end face in the upper portion of the chip inner end face of the through via, and

each of the first and second paths includes at least one upper layer line connected to the via connecting line through a via in a region other than the upper portion of the chip inner end face.

7. The semiconductor device according to claim 1 , wherein

the connecting wiring portion includes a via connecting line formed in contact with the chip inner end face in an upper portion of the chip inner end face of the through via, and

each of the first and second paths includes at least one upper layer line connected to the via connecting line through a via in the upper portion of the chip inner end face.

8. The semiconductor device according to claim 1 , wherein

the connecting wiring portion includes a via connecting line formed in contact with the chip inner end face in the upper portion of the chip inner end face of the through via, and at least one first upper layer line connected to the via connecting line through a via, and

each of the first and second paths includes a second upper layer line connected to the first upper layer line through the via.

9. The semiconductor device according to claim 1 , wherein

the connecting wiring portion includes a via connecting line formed in contact with the chip inner end face in the upper portion of the chip inner end face of the through via, and

each of the first and second paths includes at least one upper layer line connected to the via connecting line through a via in a region other than the upper portion of the chip inner end face.

10. The semiconductor device according to claim 1 , wherein

the connecting wiring portion includes a via connecting line formed in contact with the chip inner end face in the upper portion of the chip inner end face of the through via, and

each of the first and second paths includes a lowermost layer line formed in the same layer as the via connecting line.

11. The semiconductor device according to claim 1 , wherein

the connecting wiring portion includes a via connecting line formed in contact with the chip inner end face in the upper portion of the chip inner end face of the through via,

the first path includes at least one upper layer line connected to the via connecting line through a via, and

the second path includes a lowermost layer line formed in the same layer as the via connecting line.

12. The semiconductor device according to claim 1 , wherein

the first buffer circuit includes an output buffer circuit that outputs a current to the first path, and

the second buffer circuit includes an input buffer circuit that outputs the test result signal based on a voltage of the second path.

13. The semiconductor device according to claim 1 , wherein the first buffer circuit and the second buffer circuit are simultaneously in a conduction state when the first buffer outputs the test signal.

14. A semiconductor device comprising:

a through via formed to penetrate a semiconductor substrate;

a first buffer circuit and a second buffer circuit;

a wiring forming layer formed in an upper layer of the semiconductor substrate;

a connecting wiring portion formed in an upper portion of the through via, wherein a direction from the semiconductor substrate to the wiring forming layer is an upward direction, the connecting wiring portion being formed on a chip inner end face that faces the upper portion of the semiconductor substrate at an end face of the through via;

a first path connecting the first buffer circuit and the through via;

a second path connecting the second buffer circuit and the through via;

a test circuit that outputs a test result signal indicating an occurrence of a disconnection in the connecting wiring portion, based on a fact that a voltage of the first path and a voltage of the second path have different voltage values,

wherein the first path and the second path are electrically connected via the connecting wiring portion and one of the first and second buffer circuits causes a current to flow to the other of the first and second buffer circuits through the connecting wiring portion,

wherein the first buffer circuit includes a plurality of PMOS transistors connected between a first power supply and the first path,

wherein the second buffer circuit includes a plurality of NMOS transistors and a second impedance element connected between a second power supply and the second path, and

wherein the semiconductor device further comprises a control circuit that controls a difference between the number of the PMOS transistors to be brought into a conduction state and the number of the NMOS transistors to be brought into a conduction state simultaneously with the plurality of PMOS transistors, in a process of checking a disconnection of the connecting wiring portion.