SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
A semiconductor device includes an interlayer insulating film INS 2 , adjacent Cu wirings M 1 W formed in the interlayer insulating film INS 2 , and an insulating barrier film BR 1 which is in contact with a surface of the interlayer insulating film INS 2 and surfaces of the Cu wirings M 1 W and covers the interlayer insulating film INS 2 and the Cu wirings M 1 W. Between the adjacent Cu wirings M 1 W, the interlayer insulating film INS 2 has a damage layer DM 1 on its surface, and has an electric field relaxation layer ER 1 having a higher nitrogen concentration than a nitrogen concentration of the damage layer DM 1 at a position deeper than the damage layer DM 1.
1 - 20 . (canceled)
21 . A semiconductor device comprising:
a semiconductor substrate;
an interlayer insulating film formed over the semiconductor substrate and having a main surface;
a first wiring and a second wiring which are embedded in the interlayer insulating film and are adjacent to each other;
wherein the first wiring and the second wiring are mainly made of a copper film,
wherein a surface portion of the interlayer insulating film contains nitrogen, and
wherein the surface portion of the interlayer insulating film has a distribution in nitrogen concentration, with an outermost part of the surface portion in a thickness direction having a lower nitrogen concentration than an inner part of the surface portion in the thickness direction.
22 . The semiconductor device according to claim 21 ,
wherein the outermost part of the surface portion of the interlayer insulating film is a damage layer and the inner part of the surface portion of the interlayer insulating film is an electric field relaxation layer.
23 . The semiconductor device according to claim 22 ,
wherein the interlayer insulating film is made of an insulating film having a dielectric constant of 3.0 or less.
24 . The semiconductor device according to claim 23 ,
wherein the interlayer insulating film includes Si, O, and C.
25 . The semiconductor device according to claim 22 ,
wherein the damage layer is present in a depth range of 4 nm from the main surface of the interlayer insulating film.
26 . The semiconductor device according to claim 22 ,
wherein the electric field relaxation layer has a peak region of the nitrogen concentration.
27 . The semiconductor device according to claim 26 ,
wherein the peak region of the nitrogen concentration is positioned in a range of 5 to 20 nm from the main surface of the interlayer insulating film.
28 . The semiconductor device according to claim 22 ,
wherein the electric field relaxation layer is provided at a position shallower than one-half of a thickness of the first wiring based on the main surface of the interlayer insulating film.
29 . The semiconductor device according to claim 21 ,
wherein the interlayer insulating film is made of an insulating film having a dielectric constant of 3.0 or less.
30 . The semiconductor device according to claim 21 ,
wherein each of the first wiring and the second wiring has a side face inclining so that a width of the first wiring and a width of the second wiring are increased in a direction toward the main surface.