Point-of-use enrichment of gas mixtures for semiconductor structure fabrication and systems for providing point-of-use enrichment of gas mixtures
Point-of-use enrichment of gas mixtures for semiconductor structure fabrication, and systems for providing point-of-use enrichment of gas mixtures, are described herein. In an example, a system for fabricating a semiconductor structure includes a process chamber for processing a substrate of a semiconductor structure. A gas supply is coupled to the process chamber. A point-of-use gas enrichment module is coupled to the gas supply. The point-of-use gas enrichment module is configured to concentrate a first gas composition to provide a second gas composition to the gas supply for the process chamber. The second gas composition has a relative amount of a hydride species greater than a relative amount of corresponding hydride species in the first gas composition.
1. A method of fabricating a semiconductor structure, the method comprising:
a process chamber for processing a substrate of a semiconductor structure;
a gas supply coupled to the process chamber; and
a point-of-use gas enrichment module coupled to the gas supply, the point-of-use gas enrichment module configured to concentrate a first gas composition to provide a second gas composition to the gas supply for the process chamber, the second gas composition having a relative amount of a hydride species greater than a relative amount of corresponding hydride species in the first gas composition.
2. The system of claim 1 , wherein the point-of-use gas enrichment module comprises a semi-permeable membrane, the semi-permeable membrane permeable to the hydride species.
3. The system of claim 1 , wherein the point-of-use gas enrichment module comprises an electrochemical cell.
4. The system of claim 1 , wherein the gas supply is configured to provide the second gas composition to the process chamber with a flow rate approximately in the range of 3-100 sccm.
5. The system of claim 1 , wherein the point-of-use gas enrichment module is configured to humidify the first gas composition.
6. The system of claim 1 , wherein the hydride species is selected from the group consisting of diborane (B 2 H 6 ), phosphine (PH 3 ), arsine (AsH 3 ), silane (SiH 4 ), disilane (Si 2 H 6 ), and stibine (SbH 3 ).
7. The system of claim 1 , wherein the semiconductor structure is selected from the group consisting of a solar cell, an integrated circuit, a light-emitting diode, a display and a battery.
8. The system of claim 1 , wherein the hydride species is phosphine (PH 3 ), and the first gas composition has a first amount of phosphine of approximately 5% or less, and the second gas composition has a second amount of phosphine of approximately 50% or more.
9. The system of claim 1 , wherein the hydride species is diborane (B 2 H 6 ), and the first gas composition has a first amount of diborane of approximately 30% or less, and the second gas composition has a second amount of diborane of approximately 80% or more.
10. A system for fabricating a semiconductor structure, the system comprising:
a process chamber for processing a substrate of a semiconductor structure;
a gas supply coupled to the process chamber; and
a point-of-use gas enrichment module coupled to the gas supply, the point-of-use gas enrichment module configured to concentrate a first gas composition to provide a second gas composition to the gas supply for the process chamber, the second gas composition having a relative amount of a hydride species greater than a relative amount of corresponding hydride species in the first gas composition, wherein the point-of-use gas enrichment module comprises a semi-permeable membrane, the semi-permeable membrane permeable to the hydride species, and wherein the hydride species is selected from the group consisting of diborane (B 2 H 6 ), phosphine (PH 3 ), arsine (AsH 3 ), silane (SiH 4 ), disilane (Si 2 H 6 ), and stibine (SbH 3 ).
11. The system of claim 10 , wherein the gas supply is configured to provide the second gas composition to the process chamber with a flow rate approximately in the range of 3-100 sccm.
12. The system of claim 10 , wherein the point-of-use gas enrichment module is configured to humidify the first gas composition.
13. The system of claim 10 , wherein the semiconductor structure is selected from the group consisting of a solar cell, an integrated circuit, a light-emitting diode, a display and a battery.
14. A system for fabricating a semiconductor structure, the system comprising:
a process chamber for processing a substrate of a semiconductor structure;
a gas supply coupled to the process chamber; and
a point-of-use gas enrichment module coupled to the gas supply, the point-of-use gas enrichment module configured to concentrate a first gas composition to provide a second gas composition to the gas supply for the process chamber, the second gas composition having a relative amount of a hydride species greater than a relative amount of corresponding hydride species in the first gas composition, wherein the point-of-use gas enrichment module comprises an electrochemical cell, and wherein the hydride species is selected from the group consisting of diborane (B 2 H 6 ), phosphine (PH 3 ), arsine (AsH 3 ), silane (SiH 4 ), disilane (Si 2 H 6 ), and stibine (SbH 3 ).
15. The system of claim 14 , wherein the gas supply is configured to provide the second gas composition to the process chamber with a flow rate approximately in the range of 3-100 sccm.
16. The system of claim 14 , wherein the point-of-use gas enrichment module is configured to humidify the first gas composition.
17. The system of claim 14 , wherein the semiconductor structure is selected from the group consisting of a solar cell, an integrated circuit, a light-emitting diode, a display and a battery.