Method and system for offset mirroring in a storage system
In general, embodiments of the technology relate to a method for storing data. The method includes receiving a request to write data. In response to the request, the method further includes, selecting a first physical address in a first region in a first storage module, selecting a second physical address in a second region in a second storage module, where an amount of wear associated with the first physical address is different than an amount of wear associated with the second physical address, writing a first copy of the data to the first physical address, and writing a second copy of the data to the second physical address.
1. A method for storing data comprising:
receiving a request to write data;
in response to the request, mirroring the data to storage modules having mirrored write operations restricted to active regions by:
selecting a first physical address in a first active region in a first storage module of the storage modules, wherein the first active region comprises an address range less than a total address range of the first storage module;
selecting a second physical address in a second active region in a second storage module of the storage modules, wherein the second active region comprises an address range less than a total address range of the second storage module, wherein an amount of wear associated with the first active region is less than a first change threshold and an amount of wear associated with the second active region is greater than the first change threshold;
writing a first copy of the data to the first physical address; and
writing a second copy of the data to the second physical address,
wherein the first storage module and the second storage modules are solid state modules.
2. The method of claim 1 , further comprising:
modifying the address range of the first active region to include a new address range that is different from the address range to obtain an updated first active region;
after obtaining the updated first active region:
receiving a second request to write second data;
in response to the second request:
selecting a third physical address in the updated first active region;
selecting a fourth physical address in the second active region;
writing a first copy of the second data to the third physical address; and
writing a second copy of the second data to the fourth physical address.
3. The method of claim 2 , further comprising:
obtaining an amount of wear of the first active region;
making a determination that an amount of wear of the first active region exceeds a change threshold associated with the first storage module; and
performing a modification of the first active region in response to the determination.
4. The method of claim 3 , wherein the second storage module is associated with a second change threshold and wherein the second change threshold is different than the change threshold.
5. The method of claim 3 , wherein the change threshold is P/E cycle value.
6. The method of claim 2 , wherein the amount of wear associated with the second physical address and the amount of wear associated with the fourth physical address are substantially similar.
7. The method of claim 1 , wherein the first storage module comprises solid state storage.
8. The method of claim 1 , wherein the request specifies a replication level.
9. A system, comprising:
a storage array comprising a plurality of storage modules; and
a controller operatively connected to the storage array and configured to:
receive a request to write data;
in response to the request, mirror the data to the plurality of storage modules having mirrored write operations restricted to active regions by:
select a first physical address in a first active region in a first storage module of the plurality of storage modules, wherein the first active region comprises an address range less than a total address range of the first storage module;
select a second physical address in a second active region in a second storage module of the plurality of storage modules, wherein an amount of wear associated with the first active region is less than a first change threshold and an amount of wear associated with the second active region is greater than the first change threshold;
write a first copy of the data to the first physical address; and
write a second copy of the data to the second physical address,
wherein the first storage module and the second storage modules are solid state modules.
10. The system of claim 9 , wherein the controller is further configured to:
modify the address range of the first active region to include a new address range that is different from the address range to obtain an updated first active region;
after obtaining the updated first active region:
receive a second request to write second data;
in response to the second request:
select a third physical address in the updated first active region;
select a fourth physical address in the second active region;
write a first copy of the second data to the third physical address; and
write a second copy of the second data to the fourth physical address.
11. The system of claim 10 , wherein the controller is further configured to:
obtain an amount of wear of the first active region;
make a determination that an amount of wear of the first active region exceeds a change threshold associated with the first storage module; and
perform a modification of the first active region in response to the determination.
12. The system of claim 11 , wherein the second storage module is associated with a second change threshold and wherein the second change threshold is different than the change threshold.
13. The system of claim 11 , wherein the change threshold is P/E cycle value.
14. The system of claim 10 , wherein the amount of wear associated with the second physical address and the amount of wear associated with the fourth physical address are substantially similar.
15. The system of claim 9 , wherein the request specifies a replication level.
16. The system of claim 9 , wherein at least one of the plurality of storage modules comprises at least one selected from a group consisting of NAND flash and write in-place persistent memory.
17. A non-transitory computer readable medium comprising instructions, which when executed by at least one processor perform a method, the method comprising:
receiving a request to write data;
in response to the request, mirroring the data to storage modules having mirrored write operations restricted to active regions by:
selecting a first physical address in a first active region in a first storage module of the storage modules, wherein the first active region comprises an address range less than a total address range of the first storage module;
selecting a second physical address in a second active region in a second storage module of the storage modules, wherein the second active region comprises an address range less than a total address range of the second storage module, wherein an amount of wear associated with the first active region is less than a first change threshold and an amount of wear associated with the second active region is greater than the first change threshold;
writing a first copy of the data to the first physical address; and
writing a second copy of the data to the second physical address,
wherein the first storage module and the second storage modules are solid state modules.
18. The non-transitory computer readable medium of claim 17 , the method further comprising:
modifying the address range of the first active region to include a new address range that is different from the address range to obtain an updated first active region;
after obtaining the updated first active region:
receiving a second request to write second data;
in response to the second request:
selecting a third physical address in the updated first active region;
selecting a fourth physical address in the second active region;
writing a first copy of the second data to the third physical address; and
writing a second copy of the second data to the fourth physical address.
19. The non-transitory computer readable medium of claim 18 , the method further comprising:
obtaining an amount of wear of the first active region;
making a determination that an amount of wear of the first active region exceeds a change threshold associated with the first storage module; and
performing a modification of the first active region in response to the determination.
20. The non-transitory computer readable medium of claim 19 , wherein the second storage module is associated with a second change threshold and wherein the second change threshold is different than the change threshold.