Non-volatile memory interface

1. A method comprising:

sending an indication that a request is being sent to a non-volatile memory via a bus between a memory interface for a processor and the non-volatile memory;

sending the request to the non-volatile memory via the bus, the request including a preamble for use by the non-volatile memory to prepare to acquire the request via the bus;

sending the request to the non-volatile memory via the bus, the request also including an address for identifying a location in the non-volatile memory containing data to be read;

acquiring an indication via the bus that the non-volatile memory is ready to send information associated with the request;

sending an indication via the bus that access to the bus has been granted to the non-volatile memory; and

receiving the information from the non-volatile memory via the bus, the information including the data.

2. The method of claim 1 , the request includes a command that indicates that a read transaction is to be performed to read the data from the location in the non-volatile memory.

3. The method of claim 1 , further comprising:

acquiring a strobe signal from logic at the non-volatile memory via the bus; and

receiving the information from the bus using the acquired strobe signal.

4. The method of claim 1 , comprising the bus including a plurality of wires, sending the request to the non-volatile memory and receiving the information from the non-volatile memory on a same wire of the plurality of wires.

5. The method of claim 1 , further comprising:

acquiring an indication from the bus that the information from the non-volatile memory is no longer being sent via the bus.

6. The method of claim 5 , the indication that the information from the non-volatile memory is no longer being sent via the bus includes a post-amble.

7. The method of claim 6 , sending, based on the post-amble, an indication via the bus that access is no longer granted to the non-volatile memory.

8. The method of claim 6 , comprising the bus including a plurality of wires, receiving the information from the non-volatile memory on a first wire of the plurality of wires and the indication that the information from non-volatile memory is no longer being sent via the bus is acquired on a second wire of the plurality of wires.

9. The method of claim 1 , the non-volatile memory comprises one or more of a flash memory device, a ferroelectric transistor random access memory (FeTRAM) memory device, a magneto-resistive random access memory (MRAM) memory device, a phase change memory device, a resistive random access memory (RRAM) memory device, or a spin transfer torque (STT) MRAM memory device.

10. A method comprising:

sending an indication that a request is being sent to a non-volatile memory via a bus between a memory interface for a processor and the non-volatile memory;

sending the request to the non-volatile memory via the bus, the request including a preamble for use by the non-volatile memory to prepare to acquire the request from the bus;

sending the request to the non-volatile memory via the bus, the request also including an address for use in identifying a location in the non-volatile memory to be written;

sending data to be written to the non-volatile memory via the bus;

sending a strobe signal to the non-volatile memory via the bus for the non-volatile memory to use to acquire the data to be written to the location in the non-volatile memory; and

sending an indication via the bus to the non-volatile memory that the sending of the data to be written to the location in the non-volatile memory via the bus is complete.

11. The method of claim 10 , comprising the bus including a plurality of wires, receiving the request and sending the data on a same wire from among the plurality of wires.

12. The method of claim 10 , the request includes a command that indicates that a write transaction is to be performed to write the data to the location in the non-volatile memory.

13. The method of claim 10 , the indication that sending of the data to be written to the location in the non-volatile memory via the bus is complete is based on information included in a post-amble.

14. The method of claim 10 , comprising the bus including a plurality of wires, sending the data to be written to the location in the non-volatile memory on a first wire of the plurality of wires and sending the indication that the sending of the data to be written to the location in the non-volatile memory via the bus is complete on a second wire of the plurality of wires.

15. The method of claim 10 , further comprising:

acquiring an indication via the bus that the non-volatile memory is ready to send a response to the request;

sending an indication via the bus that access to the bus has been granted to the non-volatile memory;

receiving information from the non-volatile memory via the bus, the information including a preamble for use by the memory interface to prepare to acquire the response to the request via the bus; and

receiving the response to the request via the bus.

16. The method of claim 15 , the response to the request comprising an indication of whether the request was successful.

17. The method of claim 10 , the non-volatile memory comprises one or more of a flash memory device, a ferroelectric transistor random access memory (FeTRAM) memory device, a magneto-resistive random access memory (MRAM) memory device, a phase change memory device, a resistive random access memory (RRAM) memory device, or a spin transfer torque (STT) MRAM memory device.

18. An apparatus comprising:

a bus coupled with a non-volatile memory; and

a memory interface coupled with the bus, the memory interface to include logic to:

send an indication that a request is to be sent to the non-volatile memory via the bus;

send the request to the non-volatile memory via the bus, the request to include a preamble for use by the non-volatile memory to prepare to acquire the request via the bus;

send the request to the non-volatile memory via the bus, the request to also include an address to identify a location in the non-volatile memory that contains data to be read;

acquire an indication via the bus that the non-volatile memory is ready to send information associated with the request;

send an indication via the bus that access to the bus has been granted to the non-volatile memory; and

receive the information from the non-volatile memory via the bus, the information to include the data.

19. The apparatus of claim 18 , the request includes a command that indicates that a read transaction is to be performed to read the data from the location in the non-volatile memory.

20. The apparatus of claim 18 , further comprising the logic to:

acquire a strobe signal from the non-volatile memory via the bus; and

receive the information from the bus via use of the acquired strobe signal.

21. The apparatus of claim 18 , comprising the bus to include a plurality of wires, the logic to send the request to the non-volatile memory and receive the information from the non-volatile memory on a same wire of the plurality of wires.

22. The apparatus of claim 18 , further comprising the logic to:

acquire an indication from the bus that the information from the non-volatile memory is no longer being sent via the bus.

23. The apparatus of claim 22 , the indication that the information from the non-volatile memory is no longer being sent via the bus includes a post-amble.

24. The apparatus of claim 23 , the logic to send, based on the post-amble, an indication via the bus that access is no longer granted to the non-volatile memory.

25. The apparatus of claim 24 , comprising the bus to include a plurality of wires, the logic to receive the information from the non-volatile memory on a first wire of the plurality of wires and the indication that the information from non-volatile memory is no longer being sent via the bus is acquired by the logic on a second wire of the plurality of wires.

26. The apparatus of claim 18 , the non-volatile memory comprises one or more of a flash memory device, a ferroelectric transistor random access memory (FeTRAM) memory device, a magneto-resistive random access memory (MRAM) memory device, a phase change memory device, a resistive random access memory (RRAM) memory device, or a spin transfer torque (STT) MRAM memory device.

27. The apparatus of claim 18 , further comprising:

a processor; and

the memory interface included in a host controller, the host controller to enable information to be exchanged between the processor and the non-volatile memory through the memory interface.