PROTECTIVE OXIDE COATING WITH REDUCED METAL CONCENTRATIONS
A method is introduced for creating a protective oxide layer over a surface of a metallic structure for use in a semiconductor processing system. The method includes providing the metallic structure, anodizing the surface of the metallic structure to form an anodization layer on the surface, and converting, using a plasma electrolytic oxidation process, at least a portion of the anodization layer to form the protective oxide layer.
1 . A method for fabricating a protective oxide layer over a surface of a metallic alloy structure used in a semiconductor processing system, the method comprising:
providing the metallic alloy structure;
anodizing the surface of the metallic alloy structure to form an anodization layer on the surface using an acidic electrolyte; and
converting, using an alkaline electrolyte in a plasma electrolytic oxidation process, at least a portion of the anodization layer to form the protective oxide layer,
wherein a metal concentration of the protective oxide layer is minimized to reduce recombination of atomic species on a surface of the protective oxide layer.
2 . The method of claim 1 , wherein the surface of the metallic alloy structure comprises at least one of aluminum, magnesium, titanium, or yttrium.
3 . The method of claim 1 , wherein the converting of at least a portion of the anodization layer comprises converting, using the plasma electrolytic oxidation process, substantially an entire thickness of the anodization layer to form the protective oxide layer over the surface of the metallic alloy structure.
4 . The method of claim 1 , wherein the surface of the metallic alloy structure is directly covered by the protective oxide layer from the plasma electrolytic oxidation process at a first location and directly covered by the anodization layer from the anodizing at a second location.
5 . (canceled)
6 . The method of claim 1 , wherein the protective oxide layer is substantially free of one or more defects in the anodization layer.
7 . The method of claim 1 , further comprising forming a plurality of surface ridges protruding from the protective oxide layer, the plurality of surface ridges substantially align with corresponding ones of a plurality of defects in the anodization layer.
8 . A coated metallic structure used in a plasma processing equipment, comprising:
a metallic alloy structure; and
a protective oxide layer formed over a surface of the metallic alloy structure, the protective oxide layer formed by (i) anodizing the surface of the metallic alloy structure to generate an anodized layer using an acidic electrolyte and (ii) converting substantially all of the anodized layer using an alkaline electrolyte in a plasma electrolytic oxidation process,
wherein the protective oxide layer is characterized by a plurality of surface ridges protruding from the protective oxide layer and a metal concentration of the protective oxide layer is minimized to reduce recombination of atomic species on a surface of the protective oxide layer.
9 . The coated metallic structure of claim 8 , wherein the protective oxide layer is generally planar.
10 . The coated metallic structure of claim 8 , wherein the plurality of surface ridges are substantially aligned with respective ones of a plurality of cracks formed in the anodized layer.
11 . The coated metallic structure of claim 8 , wherein a surface of the protective oxide layer is planarized by mechanical processing.
12 . The coated metallic structure of claim 8 , wherein the protective oxide layer formed from the plasma electrolytic oxidation process directly covers the surface of the metallic alloy structure at a first surface location and the anodized layer formed from the anodizing directly covers the surface of the metallic alloy structure at a second surface location.
13 . A component comprising a metallic alloy layer and a protective oxide layer over a surface of the metallic alloy layer, the component formed by the process of:
providing the metallic alloy layer;
forming an anodization layer on the surface of the metallic alloy layer by anodizing the surface using an acidic electrolyte; and
converting, using an alkaline electrolyte in a plasma electrolytic oxidation process, at least a portion of the anodization layer to form the protective oxide layer over the surface of the metallic alloy layer,
wherein a metal concentration of the protective oxide layer is minimized to reduce recombination of atomic species on a surface of the protective oxide layer.
14 . (canceled)
15 . The component of claim 13 , wherein the metallic alloy layer comprises an aluminum alloy.
16 . The component of claim 13 , wherein the surface of the metallic alloy layer comprises at least one of aluminum, magnesium, titanium, or yttrium.
17 . The component of claim 13 , wherein the forming of an anodization layer comprises anodizing the surface by a hard anodization process.
18 . The component of claim 13 , wherein a thickness of the anodization layer is less than 130 microns.
19 . The component of claim 18 , wherein the thickness of the anodization layer is between about 12 to about 120 microns.
20 . The component of claim 13 , wherein the converting of at least a portion of the anodization layer comprises converting, using the plasma electrolytic oxidation process, substantially an entire thickness of the anodization layer to form the protective oxide layer over the surface of the metallic alloy layer.
21 . The component of claim 13 , wherein the protective oxide layer is substantially free of one or more defects in the anodization layer.
22 . The component of claim 13 , wherein the protective oxide layer includes a partially crystallized dense structure formed adjacent to the metallic alloy layer.
23 . The component in claim 13 , wherein the protective oxide layer is corrosion and erosion resistant.
24 . The component in claim 13 , wherein the protected oxide layer is in contact with a plasma in a plasma processing chamber.
25 . The component in claim 13 , wherein the protected oxide layer is in contact with a reactive gas or gaseous radicals in a semiconductor processing chamber.
26 . The component in claim 13 , wherein the protected oxide layer is in contact with a corroding liquid reagent in a semiconductor processing chamber.
27 . A method for fabricating a protective oxide layer over a surface of a metallic structure used in a semiconductor processing system, wherein at least a portion of the surface of the metallic structure is curved, the method comprising:
providing the metallic structure;
anodizing the curved surface of the metallic structure to form an anodization layer on the surface using an acidic electrolyte;
converting, using an alkaline electrolyte in a plasma electrolytic oxidation process, at least a portion of the anodization layer on the curved surface of the metallic structure to form the protective oxide layer; and
forming a plurality of surface ridges protruding from the protective oxide layer, wherein the plurality of surface ridges are aligned with corresponding ones of a plurality of cracks in the anodization layer over the curved surface of the metallic structure.