Magnetoresistive stack and method of fabricating same

1. A method of manufacturing a magnetoresistive stack on a substrate, the method comprising:

forming a first dielectric layer over the substrate;

forming a free magnetic layer over the first dielectric layer, wherein a first surface of the free magnetic layer is in contact with the first dielectric layer, wherein forming the free magnetic layer includes:

depositing a first layer of iron over the first dielectric layer,

after depositing the first layer of iron, depositing a first layer of a ferromagnetic material on the first layer of iron,

after depositing the first layer of ferromagnetic material, depositing a non-ferromagnetic transition metal on the first layer of ferromagnetic material,

after depositing the non-ferromagnetic transition metal, depositing a second layer of a ferromagnetic material on the non-ferromagnetic transition metal, and

after depositing the second layer of ferromagnetic material, depositing a second layer of iron over the second layer of a ferromagnetic material;

forming a second dielectric layer on a second surface of the free magnetic layer; and

annealing the free magnetic layer, wherein, after annealing, the non-ferromagnetic transition metal does not break direct exchange coupling between the first layer of a ferromagnetic material and the second layer of a ferromagnetic material.

2. The method of manufacturing of claim 1 , further including forming a high-iron alloy interface region at the second surface of the free magnetic layer by annealing the second layer of iron of the free magnetic layer, wherein the high-iron alloy interface region has at least 50% iron by atomic composition.

3. The method of manufacturing of claim 1 , wherein the second layer of iron is deposited on the second layer of the ferromagnetic material and the method further includes:

forming a first high-iron alloy interface region at the second surface of the free magnetic layer, wherein the first high-iron alloy interface region is in contact with the second dielectric layer and has at least 50% iron by atomic composition and includes materials from (i) the second layer of iron and (ii) the second layer of a ferromagnetic material.

4. The method of manufacturing of claim 3 , further including forming a second high-iron alloy interface region at the first surface of the free magnetic layer, wherein the first high-iron alloy interface region is in contact with the first dielectric layer and has at least 50% iron by atomic composition and includes materials from (i) the first layer of iron and (ii) the first layer of a ferromagnetic material.

5. The method of manufacturing of claim 1 , wherein depositing the second layer of iron includes depositing iron having a thickness in the range of 1.5 Angstroms to 3 Angstroms.

6. The method of manufacturing of claim 5 , wherein depositing the second layer of iron includes depositing pure iron, and the method of manufacturing further includes:

forming a high-iron alloy interface region at the second surface of the free magnetic layer from the second layer of iron wherein the high-iron alloy interface region is in contact with the second dielectric layer and includes at least 50% iron by atomic composition.

7. The method of manufacturing of claim 1 , wherein:

depositing the first and second layers of ferromagnetic material each include depositing cobalt and iron, and

depositing a non-ferromagnetic transition metal includes depositing tantalum, titanium, molybdenum, niobium, vanadium, zirconium, hafnium, chromium, manganese or tungsten.

8. The method of manufacturing of claim 1 , wherein:

depositing the first and second layers of ferromagnetic material each include depositing cobalt and iron, and

depositing a non-ferromagnetic transition metal includes depositing niobium, zirconium, tungsten or molybdenum.

9. A method of manufacturing a magnetoresistive stack on a substrate, the method comprising:

forming a first dielectric layer over the substrate;

forming a second dielectric layer over the substrate;

forming a free magnetic layer between the first and second dielectric layers, wherein a first surface of the free magnetic layer is in contact with the first dielectric layer and a second surface of the free magnetic layer is in contact with the second dielectric layer, wherein forming the free magnetic layer includes:

depositing a first layer of a ferromagnetic material over the first dielectric layer, wherein the first layer of ferromagnetic material is an alloy including cobalt and iron,

after depositing the first layer of a ferromagnetic material, depositing a non-ferromagnetic transition metal on the first layer of ferromagnetic material,

after depositing the non-ferromagnetic transition metal, depositing a second layer of a ferromagnetic material on the non-ferromagnetic transition metal, wherein the second layer of ferromagnetic material is an alloy including cobalt and iron, and

after depositing the second layer of a ferromagnetic material, forming a high-iron alloy interface region on or over the second layer of the ferromagnetic material and at the second surface of the free magnetic layer, the high-iron alloy interface region includes at least 50% iron by atomic composition; and

annealing the free magnetic layer, wherein, after annealing, the non-ferromagnetic transition metal does not break direct exchange coupling between the first layer of a ferromagnetic material and the second layer of a ferromagnetic material.

10. The method of manufacturing of claim 9 , wherein forming the high-iron alloy interface region includes depositing a layer of iron on the second layer of the ferromagnetic material.

11. The method of manufacturing of claim 10 , wherein depositing the layer of iron includes depositing pure iron having a thickness in the range of 1.5 Angstroms to 3 Angstroms.

12. The method of manufacturing of claim 10 , wherein depositing the layer of iron includes depositing iron having a thickness that is less than 5 angstroms.

13. The method of manufacturing of claim 12 , wherein depositing a non-ferromagnetic transition metal includes depositing niobium, zirconium, tungsten or molybdenum.

14. The method of manufacturing of claim 9 , wherein depositing a non-ferromagnetic transition metal includes depositing tantalum, titanium, molybdenum, niobium, vanadium, zirconium, hafnium, chromium, manganese or tungsten.

15. The method of manufacturing of claim 9 , wherein depositing a non-ferromagnetic transition metal includes depositing niobium, zirconium, tungsten or molybdenum.

16. The method of manufacturing of claim 9 , wherein forming a high-iron alloy interface region on or over the second layer of the ferromagnetic material and at the second surface of the free magnetic layer further includes:

depositing a layer of iron on or over the second layer of the ferromagnetic material, and

annealing the layer of iron of the free magnetic layer to form a high-iron alloy including (i) at least 50% iron by atomic composition, (ii) at least one ferromagnetic material from the second layer of the ferromagnetic material, and (iii) iron from the layer of iron.

17. A method of manufacturing a magnetoresistive stack on a substrate, the method comprising:

forming a first dielectric layer over the substrate;

forming a second dielectric layer over the substrate; and

forming a free magnetic layer between the first and second dielectric layers, wherein a first surface of the free magnetic layer is in contact with the first dielectric layer and a second surface of the free magnetic layer is in contact with the second dielectric layer, wherein forming the free magnetic layer includes:

depositing a first layer of a ferromagnetic material over the first dielectric layer, wherein the first layer of ferromagnetic material includes cobalt, iron and boron,

after depositing the first layer of a ferromagnetic material, depositing a non-ferromagnetic transition metal on the first layer of ferromagnetic material, wherein the non-ferromagnetic transition metal is niobium, zirconium, tungsten or molybdenum,

after depositing the non-ferromagnetic transition metal, depositing a second layer of a ferromagnetic material on the non-ferromagnetic transition metal, wherein the second layer of ferromagnetic material includes cobalt and iron, and

after depositing the second layer of a ferromagnetic material, depositing a layer of iron having a thickness that is less than or equal to 5 angstroms on the second layer of a ferromagnetic material wherein the second dielectric layer is formed on the layer of iron; and

annealing the free magnetic layer, wherein, after annealing, the non-ferromagnetic transition metal does not break direct exchange coupling between the first layer of a ferromagnetic material and the second layer of a ferromagnetic material.

18. The method of manufacturing of claim 17 , wherein depositing the layer of iron includes depositing iron having a thickness in the range of 1.5 Angstroms to 3 Angstroms.

19. The method of manufacturing of claim 17 , further including forming the high-iron alloy interface region at the second surface of the free magnetic layer by annealing the layer of iron of the free magnetic layer, wherein the high-iron alloy interface region includes at least 50% iron by atomic composition.

20. The method of manufacturing of claim 17 , further including forming the high-iron alloy interface region at the second surface of the free magnetic layer by annealing the layer of iron of the free magnetic layer, wherein the high-iron alloy interface region includes (i) at least 50% iron by atomic composition, (ii) at least cobalt from the second layer of the ferromagnetic material, and (iii) iron from the layer of iron.

21. The method of manufacturing of claim 20 , wherein the non-ferromagnetic transition metal is molybdenum.

22. The method of manufacturing of claim 1 , wherein depositing a non-ferromagnetic transition metal further includes depositing non-continuous non-ferromagnetic transition metal.

23. The method of manufacturing of claim 1 , further including forming an alloy between the first layer of ferromagnetic material and the second layer of ferromagnetic material wherein the alloy consists essentially of the non-ferromagnetic transition metal and the materials of (i) the first layer of ferromagnetic material and/or (ii) the second layer of ferromagnetic material.

24. The method of manufacturing of claim 1 , wherein, after annealing the free magnetic layer, the non-ferromagnetic transition metal is a non-continuous layer.

25. The method of manufacturing of claim 9 , wherein depositing a non-ferromagnetic transition metal further includes depositing non-continuous non-ferromagnetic transition metal.

26. The method of manufacturing of claim 9 , further including forming an alloy between the first layer of ferromagnetic material and the second layer of ferromagnetic material wherein the alloy consists essentially of the non-ferromagnetic transition metal and the materials of (i) the first layer of ferromagnetic material and/or (ii) the second layer of ferromagnetic material.

27. The method of manufacturing of claim 9 , wherein, after annealing the free magnetic layer, the non-ferromagnetic transition metal is a non-continuous layer.

28. The method of manufacturing of claim 17 , wherein depositing a non-ferromagnetic transition metal further includes depositing non-continuous non-ferromagnetic transition metal.

29. The method of manufacturing of claim 17 , further including forming an alloy between the first layer of ferromagnetic material and the second layer of ferromagnetic material wherein the alloy consists essentially of the non-ferromagnetic transition metal and the materials of (i) the first layer of ferromagnetic material and/or (ii) the second layer of ferromagnetic material.

30. The method of manufacturing of claim 17 , wherein, after annealing the free magnetic layer, the non-ferromagnetic transition metal is a non-continuous layer.