IP Library Granted Patent US 9,948,056
Granted Patent B2
US 9,948,056 · App. 15/407,966 · Granted Apr 17, 2018

High-Q amplified resonator

Inventor: Inuk Kang (Holmdel, NJ)
Assignee: LGS INNOVATIONS LLC
H01S3/0637G02B6/29338H01S3/1608
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 9,948,056
App. No.
15/407,966
Granted
Apr 17, 2018
Kind
B2
Abstract

Ring resonators and methods of making and using the same are disclosed. In certain embodiments, a ring resonator may include a waveguide comprising a pump bus and a signal bus disposed adjacent a ring guide, the pump bus and signal bus configured to couple electromagnetic signals to and from ring guide, wherein at least a portion of the waveguide comprises erbium-doped silica and a cladding material disposed adjacent the waveguide, wherein the cladding material exhibits an index of refraction that is lower than an index of refraction of the waveguide, wherein the ring resonator exhibits a propagation loss of less than 2 dB/m.

Claims (31)

1. A ring resonator comprising:

a waveguide comprising a pump bus and a signal bus disposed adjacent a ring guide, the pump bus and signal bus configured to couple electromagnetic signals to and from ring guide, wherein at least a portion of the waveguide comprises erbium-doped silica; and

a cladding material disposed adjacent the waveguide, wherein the cladding material exhibits an index of refraction that is lower than an index of refraction of the waveguide,

wherein the power coupling of κ 1 (λ s ), κ 2 (λ s ), and/or κ 1 (λ p ), κ 2 (λ p ) are configured such that the ring resonator exhibits a quality factor (Q) of greater than 10 5 for the signal and/or pump, where (λ p ) is a pump wavelength, (λ s ) is a signal wavelength, and (k 1 ) is a coupling coefficient of one of the signal bus and the pump bus and the ring guide, and where (k 2 ) is a pump coefficient of the other bus and the ring guide,

wherein the ring resonator exhibits a propagation loss of less than 2 dB/m.

2. The ring resonator of claim 1 , wherein the ring resonator exhibits a propagation loss of less than 1 dB/m.

3. The ring resonator of claim 1 , wherein the ring resonator exhibits a propagation loss of less than 0.02 dB/m.

4. The ring resonator of claim 1 , wherein the ring resonator exhibits a free spectral range (FSR) of greater than 10 GHz.

5. The ring resonator of claim 1 , wherein the ring resonator exhibits an extinction of greater than 30 dB.

6. The ring resonator of claim 1 , wherein pump bus and/or the signal bus is directionally coupled with the ring.

7. The ring resonator of claim 1 , further comprising a thermal film disposed adjacent the cladding layer, the thermal film configured to conduct thermal energy to effect a phase shift in the waveguide.

8. A method of using a ring resonator, the ring resonator comprising a waveguide comprising a pump bus and a signal bus disposed adjacent a ring guide, the pump bus and signal bus configured to couple electromagnetic signals to and from ring guide; and a cladding material disposed adjacent the waveguide, wherein the cladding material exhibits an index of refraction that is lower than an index of refraction of the waveguide, the method comprising:

configuring a pump wavelength (λ p ), a signal wavelength (λ s ), a coupling coefficient (k 1 ) of the signal bus and the ring and a pump coefficient (k 2 ) of the pump bus and the ring such that the net coupling loss and propagation loss in the ring of the signal (λ s ) are balanced upon application of pump (λ p ), achieving critical coupling as represented by:

K 1 =(α− g )+ K 2 ,

where K i (i=1, 2) is the power coupling coefficient, a is the propagation loss round trip in the ring, and g is the optical gain per round trip provided by the pump.

9. The method of claim 8 , wherein at least a portion of the waveguide comprises erbium-doped silica.

10. The method of claim 8 , wherein the ring resonator exhibits a quality factor (Q) of greater than 10 5 .

11. The method of claim 8 , further comprising adjusting a ratio of k 1 (λ s ) and k 2 (λ s ) to modify an extinction of the ring resonator.

12. The method of claim 11 , wherein the ring resonator exhibits an extinction of greater than 30 dB.

13. The method of claim 8 , wherein the ring resonator exhibits a propagation loss of less than 2 dB/m.

14. The method of claim 8 , wherein the ring resonator exhibits a propagation loss of less than 0.02 dB/m.

15. The method of claim 8 , wherein the ring resonator exhibits a free spectral range (FSR) of greater than 10 GHz.

16. A method of manufacturing a ring resonator, the method comprising:

disposing an erbium-doped glass film on a base wafer;

forming a waveguide from the erbium-doped glass film using one or more of contact lithography and etching, wherein the waveguide comprises a pump bus and a signal bus disposed adjacent a ring guide, the pump bus and signal bus configured to couple electromagnetic signals to and from ring guide;

disposing a cladding layer adjacent the waveguide, wherein the cladding material exhibits an index of refraction that is lower than an index of refraction of the waveguide,

wherein the power coupling of κ 1 (λ s ), κ 2 (λ s ), and/or κ 1 (λ p ), κ 2 (λ p ) are configured such that the ring resonator exhibits a quality factor (Q) of greater than 10 5 for the signal and/or pump, where (λ p ) is a pump wavelength, (λ s ) is a signal wavelength, and (k 1 ) is a coupling coefficient of one of the signal bus and the pump bus and the ring guide, and where (k 2 ) is a pump coefficient of the other bus and the ring guide,

wherein the ring resonator exhibits a propagation loss of less than 2 dB/m.

17. The method of claim 16 , wherein the erbium-doped glass film is disposed on the base wafer using Plasma Enhanced Chemical Vapor Deposition (PECVD).

18. The method of claim 16 , wherein the cladding layer is disposed adjacent the waveguide using a LPCVD (Low Pressure CVD).

19. The method of claim 16 , further comprising disposing a thermal film adjacent the cladding layer, wherein the thermal film is configured to conduct thermal energy to effect a phase shift in the waveguide.

Assignments (4)
NOTICE OF GRANT OF SECURITY INTEREST IN PATENTS Recorded Jan 22, 2025
From: CACI LGS INNOVATIONS LLC
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 069987/0444 →
CHANGE OF NAME Recorded Nov 4, 2024
From: LGS INNOVATIONS LLC
To: CACI LGS INNOVATIONS LLC
Reel/Frame 069292/0991 →
NOTICE OF GRANT OF SECURITY INTEREST IN PATENTS Recorded May 29, 2019
From: LGS INNOVATIONS LLC
To: BANK OF AMERICA, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 049312/0843 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 18, 2017
From: KANG, INUK
To: LGS INNOVATIONS LLC
Reel/Frame 041009/0635 →
Continuity (2)
Provisional Application 62398263 · Sep 22, 2016
Related Publication 20180083410A1 · Mar 22, 2018