IP Library Granted Patent US 9,818,627
Granted Patent B2
US 9,818,627 · App. 15/408,554 · Granted Nov 14, 2017

Manufacturing method of semiconductor device and semiconductor manufacturing apparatus

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Quick Facts
Patent No.
US 9,818,627
App. No.
15/408,554
Granted
Nov 14, 2017
Kind
B2
Abstract

A manufacturing method of a semiconductor device according to the present invention comprises cleaning a semiconductor substrate. A first chemical liquid for forming a water-repellent protection film and a second chemical liquid coating the first chemical liquid are supplied on a surface of the semiconductor substrate. Alternatively, the semiconductor substrate is immersed in the first chemical liquid coated with the second chemical liquid. The semiconductor substrate is then dried.

Claims (11)

1. A semiconductor manufacturing apparatus comprising:

a cleaning-liquid supply part supplying a cleaning liquid cleaning a semiconductor substrate to a surface of the semiconductor substrate; and

a chemical-liquid supply part supplying a first chemical liquid for forming a water-repellent protection film and a second chemical liquid coating the first chemical liquid on the surface of the semiconductor substrate without mixing with the first chemical liquid, wherein

the chemical-liquid supply part has a double piping structure comprising a first pipe supplying the first chemical liquid and a second pipe supplying the second chemical liquid, wherein the second pipe is provided to surround an outer circumference of the first pipe.

2. The apparatus of claim 1 , wherein the chemical-liquid supply part simultaneously supplies the first chemical liquid and the second chemical liquid on the surface of the semiconductor substrate.

3. The apparatus of claim 1 , wherein the chemical-liquid supply part simultaneously supplies the first chemical liquid and the second chemical liquid on the surface of the semiconductor substrate.

4. The apparatus of claim 1 , wherein the chemical-liquid supply part supplies the second chemical liquid on the surface of the semiconductor substrate after supplying the first chemical liquid.

5. The apparatus of claim 1 , wherein the chemical-liquid supply part supplies the second chemical liquid on the surface of the semiconductor substrate after supplying the first chemical liquid.

6. The apparatus of claim 1 , wherein the first chemical liquid is a soluble water-repellent agent and the second chemical liquid is an insoluble chemical liquid, or the first chemical liquid is an insoluble water-repellent agent and the second chemical liquid is a soluble chemical liquid.

7. The apparatus of claim 1 , wherein a specific gravity of the second chemical liquid is lower than a specific gravity of the first chemical liquid.

8. The apparatus of claim 1 , wherein a specific gravity of the second chemical liquid is lower than a specific gravity of the first chemical liquid.

Assignments (4)
MERGER Recorded Jan 22, 2021
From: TOSHIBA MEMORY CORPORATION
To: K.K. PANGEA
Reel/Frame 055659/0471 →
CHANGE OF NAME AND ADDRESS Recorded Jan 22, 2021
From: TOSHIBA MEMORY CORPORATION
To: KIOXIA CORPORATION
Reel/Frame 055669/0001 →
CHANGE OF NAME AND ADDRESS Recorded Jan 22, 2021
From: K.K. PANGEA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 055669/0401 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 29, 2017
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 043052/0218 →