Methods for fabricating light emitting devices

1. A method for fabricating a light emitting device configured as a Group III-nitride based laser device, the method comprising:

providing a substrate member comprising a gallium and nitrogen containing material and a surface region with a gallium containing epitaxial material overlying the surface region;

forming a p-type (Al,In,Ga)N waveguiding material overlying the gallium containing epitaxial material under a predetermined process condition;

maintaining the predetermined process condition such that an environment during a growth of the p-type (Al,In,Ga)N waveguiding material comprises a molecular H 2 to N 2 gas flow ratio of less than 1 to 10; and

maintaining a temperature ranging from 725 C to 925 C during the formation of the p-type (Al,In,Ga)N waveguiding material, wherein the p-type (Al,In,Ga)N waveguiding material is characterized by a carbon impurity concentration of less than 1E17 atoms per cubic centimeter; and

using the device in an application selected from laser display, metrology, communications, health care, and information technology.

2. The method of claim 1 further comprising forming an active region overlying the gallium containing epitaxial material, the active region comprising of a plurality of quantum-well regions, each of the quantum-well regions being configured with a barrier material; and further comprising forming a p-type (Al,In,Ga)N electron blocking layer overlying the active region.

3. The method of claim 1 further comprising forming an active region overlying the gallium containing epitaxial material, the active region comprising of a plurality of quantum-well regions, each of the quantum-well regions being configured with a barrier material; and further comprising forming an n-type waveguiding material underneath the active region.

4. The method of claim 3 wherein the n-type waveguiding material is comprised of a material with a refractive index lower than an average refractive index of the active region but larger than indium gallium nitride with indium nitride alloy composition greater than 2% but less than 15%.

5. The method of claim 4 wherein the n-type waveguiding material comprises an aluminum gallium nitride with aluminum nitride alloy compositions greater than 0% but less than 20%.

6. The method of claim 1 further comprising forming an active region overlying the gallium containing epitaxial material, the active region comprising of a plurality of quantum-well regions, each of the quantum-well regions being configured with a barrier material; wherein the p-type (Al,In,Ga)N waveguiding material overlies the active region; and wherein the p-type (Al,In,Ga)N waveguiding material is comprised of a material with a refractive index lower than an average refractive index of the active region but larger than indium gallium nitride with indium nitride alloy composition greater than 2% but less than 15%.

7. The method of claim 6 wherein the p-type (Al,In,Ga)N waveguiding material comprises aluminum gallium nitride with aluminum nitride alloy compositions greater than 0% but less than 20%.

8. The method of claim 1 further comprising forming an active region overlying the gallium containing epitaxial material, the active region comprising of a plurality of quantum-well regions, each of the quantum-well regions being configured with a barrier material; wherein the active region comprises defect suppression regions.

9. The method of claim 1 wherein the p-type (Al,In,Ga)N waveguiding material has a thickness from 400 to 1000 nanometer with Mg doping level of 5E17 to 2E19 atoms per cubic centimeter, the p-type (Al,In,Ga)N waveguiding material being configured as a waveguiding material and a cladding region.

10. The method of claim 1 further comprising forming a highly Mg doped p++ contact layer with a thickness greater than 5 nanometer but lower than 50 nanometer overlying the p-type (Al,In,Ga)N waveguiding material.

11. The method of claim 1 further comprising introducing a metallorganic or a combination of metallogranic precursors consisting of a group including trimethylgallium, triethylgallium, trimethylaluminum, trimethylindium, or Bis(cyclopentadienyl)magnesium while forming the p-type (Al,In,Ga)N waveguiding material; and wherein the p-type (Al,In,Ga)N waveguiding material is grown using MOCVD or MBE.

12. The method of claim 1 wherein the substrate member is configured on a nonpolar (10-10), (11-20), or a related miscut orientation.

13. The method of claim 1 wherein the substrate member is configured on polar (0001) or (000-1), or a related miscut orientation.

14. The method of claim 1 wherein the substrate member is configured on a semipolar (20-21), (20-2-1), (30-31), (30-3-1), (11-22), or a related miscut orientation.

15. The method of claim 1 wherein the substrate member comprises a misfit dislocation blocking feature.

16. The method of claim 1 further comprising forming a conductive oxide material comprising either an indium tin oxide material or a zinc oxide material overlying the p-type (Al,In,Ga)N waveguiding material; and forming a metallization layer selected from at least one of Au, Ni, Pd, Al, Pt, or Ti overlying the conductive oxide material.

17. The method of claim 1 wherein a diode voltage of the light emitting device is less than 6.75 V at a current density of 14 kA/cm 2 .

18. The method of claim 1 wherein an area on the substrate member affected by dark spot defects is less than 10%.

19. A method for fabricating a light emitting device configured as a Group III-nitride based laser device, the method comprising:

providing a substrate member comprising a gallium and nitrogen containing material and a surface region with a gallium containing epitaxial material overlying the surface region;

forming a first p-type (Al,In,Ga)N waveguiding material overlying the gallium containing epitaxial material under a first predetermined process condition;

maintaining the first predetermined process condition such that an environment during a growth of the first p-type (Al,In,Ga)N waveguiding material is substantially molecular N 2 rich gas environment;

maintaining a temperature ranging from 725 C to 925 C during the formation of the first p-type (Al,In,Ga)N waveguiding material; and

forming a second p-type (Al,In,Ga)N waveguiding material overlying the gallium containing epitaxial material under a second predetermined process condition, wherein the second predetermined process condition comprises a non-substantially molecular N 2 rich gas environment; and

using the device in an application selected from laser display, metrology, communications, health care, and information technology.

20. A method for fabricating a light emitting device configured as a Group III-nitride based laser device, the method comprising:

providing a substrate member comprising a gallium and nitrogen containing material and a surface region with a gallium containing epitaxial material overlying the surface region;

forming a p-type (Al,In,Ga)N waveguiding material overlying the gallium containing epitaxial material under a predetermined process condition;

maintaining the predetermined process condition such that an environment surrounding a growth of the p-type (Al,In,Ga)N waveguiding material is substantially molecular N 2 rich gas environment; and

maintaining a temperature ranging from 725 C to 925 C during the formation of the p-type (Al,In,Ga)N waveguiding material, whereupon the predetermined process condition is substantially free from molecular H 2 gas, the p-type (Al,In,Ga)N waveguiding material is formed using a trimethylgallium metallorganic precursor and/or a triethylgallium metallorganic precursor; wherein the p-type (Al,In,Ga)N waveguiding material is formed at the predetermined process condition including an ammonia containing species, whereupon a ratio of the ammonia containing species to the substantially molecular N 2 rich gas is greater than 1:5 but less than 2:3; and

using the device in an application selected from laser display, metrology, communications, health care, and information technology.