Recessed lead leadframe packages
View Patent ↗Leadframes for semiconductor packages. Implementations may include a plurality of leads extending inwardly into an opening surrounded by the plurality of leads where the plurality of leads except for at least one are configured to mechanically couple at a surface of a semiconductor chip. The at least one of the plurality of leads that is not configured to mechanically coupled at the surface of the semiconductor chip be configured to electrically couple with the semiconductor chip.
1. A chip-on-lead package comprising:
a leadframe coupled to a semiconductor chip, the leadframe comprising a plurality of leads extending inwardly into an opening in the leadframe surrounded by the plurality of leads;
wherein at least one of the plurality of leads comprises a thinned portion adjacent to the semiconductor chip and is an at least one thinned lead;
wherein the at least one thinned lead electrically couples with a high voltage connector of the semiconductor chip; and
wherein the plurality of leads, except for the at least one thinned lead, mechanically couple to the semiconductor chip through a die bonding material.
2. The package of claim 1 , wherein the at least one thinned lead is configured to carry up to 200 volts.
3. The package of claim 1 , wherein the thinned portion of the at least one thinned lead is one of half etched and fully etched.
4. The package of claim 1 , wherein the plurality of leads is configured to couple with an electronic circuit board at a surface of each of the plurality of leads opposite the surface of the semiconductor chip.
5. The package of claim 1 , wherein the at least one thinned lead does not extend inwardly into the opening as far as the other leads of the plurality of leads.
6. The package of claim 1 , wherein the plurality of leads is configured to mechanically support the semiconductor chip through coupling at the surface of the semiconductor chip through a die bonding material.
7. The package of claim 1 , wherein a perimeter of the surface of each of the plurality of leads opposite the surface of the semiconductor chip except for the at least one thinned lead is smaller than a perimeter of a surface of each of the plurality of leads configured to be coupled at the surface of the semiconductor chip.
8. The package of claim 7 , wherein the surface of each of the plurality of leads except for the at least one thinned lead opposite the surface of the semiconductor chip is half etched.
9. A chip-on-lead package comprising:
a leadframe coupled to a semiconductor chip, the leadframe comprising a plurality of leads extending inwardly into an opening in the leadframe surrounded by the plurality of leads;
wherein at least one of the plurality of leads comprises a thinned portion across a thickness of the lead and is an at least one thinned lead;
wherein the at least one thinned lead electrically couples with a high voltage connector of the semiconductor chip; and
wherein the plurality of leads, except for the at least one thinned lead, mechanically couple to the semiconductor chip through a die bonding material.
10. The package of claim 9 , wherein the at least one thinned lead is configured to carry up to 200 volts.
11. The package of claim 9 , wherein the thinned portion of the at least one thinned lead is one of half etched and fully etched.
12. The package of claim 9 , wherein the plurality of leads is configured to couple with an electronic circuit board at a surface of each of the plurality of leads opposite the surface of the semiconductor chip.
13. The package of claim 9 , wherein the at least one thinned lead does not extend inwardly into the opening as far as the other leads of the plurality of leads.
14. The package of claim 9 , wherein the plurality of leads is configured to mechanically support the semiconductor chip through coupling at the surface of the semiconductor chip through a die bonding material.
15. The package of claim 9 , wherein a perimeter of the surface of each of the plurality of leads opposite the surface of the semiconductor chip except for the at least one thinned lead is smaller than a perimeter of a surface of each of the plurality of leads configured to be coupled at the surface of the semiconductor chip.
16. The package of claim 15 , wherein the surface of each of the plurality of leads except for the at least one thinned lead opposite the surface of the semiconductor chip is half etched.
17. A chip-on-lead package comprising:
a leadframe coupled to a semiconductor chip, the leadframe comprising a plurality of leads extending inwardly into an opening in the leadframe surrounded by the plurality of leads;
wherein at least one of the plurality of leads comprises a thinned portion and is an at least one thinned lead;
wherein the at least one thinned lead electrically couples with a high voltage connector of the semiconductor chip; and
wherein the thinned lead is configured to not directly mechanically couple at a surface of the semiconductor chip.
18. The package of claim 17 , wherein the at least one thinned lead is configured to carry up to 200 volts.
19. The package of claim 17 , wherein the thinned portion of the at least one thinned lead is one of half etched and fully etched.
20. The package of claim 17 , wherein the plurality of leads is configured to couple with an electronic circuit board at a surface of each of the plurality of leads opposite the surface of the semiconductor chip.