Laser diode enhancement device
View Patent ↗The subject invention includes a semiconductor laser with the laser having a DBR mirror on a substrate, a quantum well on the DBR mirror, and an interior CGH with a back propagated output for emitting a large sized Gaussian and encircling high energy. The DBR mirror has a plurality of GaAs/AlGaAs layers, while the quantum well is composed of AlGaAs/InGaAs. The CGH is composed of AlGaAs.
1. A Vertical External Cavity Surface Emitting Laser device comprising:
A laser source with a cavity;
A DBR mirror on a substrate within the cavity;
The DBR mirror comprising a plurality of first layers and creating a mode;
Diffractive elements consisting of a plurality of interior CGHs at an end of the cavity;
Said CGHs each having a plurality of cascaded second layers with a buffer layer between each layer;
With the diffractive elements shaping the mode.
2. The device of claim 1 having a laser gain medium that is semiconductor.
3. The device of claim 1 having a laser gain medium that is crystal.
4. The device of claim 1 having a laser gain medium that is gas.
5. The device of claim 1 wherein the plurality of diffractive optical elements comprises 2-20 layers of AlGaAs with buffer layers of GaAs.