Light-emitting device and manufacturing method thereof
View Patent ↗A light-emitting device including a substrate having a top surface, a side surface and a roughed surface between the top surface and the side surface, wherein the top surface includes a first portion and a second portion; a first semiconductor stack including a first upper surface and a first side wall, wherein the first semiconductor stack is on the second portion and exposes the first portion; a second semiconductor stack including a second side wall, wherein the second semiconductor stack is on the first upper surface and exposes an exposing portion of the first upper surface; wherein the first side wall and the first portion of the top surface form an acute angle α between thereof, and the second side wall and the exposing portion of the first upper surface form an obtuse angle β between thereof; and wherein the roughed surface is connected to the top surface.
1. A light-emitting device, comprising:
a substrate having a top surface, a side surface and a roughed surface between the top surface and the side surface, wherein the top surface comprises a first portion and a second portion;
a first semiconductor stack comprising a first upper surface and a first side wall, wherein the first semiconductor stack is on the second portion and exposes the first portion;
a second semiconductor stack comprising a second side wall, wherein the second semiconductor stack is on the first upper surface and exposes an exposing portion of the first upper surface;
wherein the first side wall and the first portion of the top surface form an acute angle α between thereof, and the second side wall and the exposing portion of the first upper surface form an obtuse angle β between thereof, and
wherein the roughed surface is connected to the top surface.
2. The light-emitting device according to claim 1 , wherein 30°≤α≤80°.
3. The light-emitting device according to claim 1 , wherein 100°≤β≤170°.
4. The light-emitting device according to claim 1 , further comprising a buffer layer between the first semiconductor stack and the top surface, wherein the buffer layer comprises AN.
5. The light-emitting device according to claim 1 , wherein the first side wall is rougher than the second side wall.
6. The light-emitting device according to claim 1 , wherein the side surface comprises a damage region, wherein a roughness of the damage region is larger than roughness of the other portion of the side surface.
7. The light-emitting device according to claim 1 , wherein the first side wall comprises an upper side wall connecting the first upper surface and a lower side wall connecting the upper side wall and the top surface, wherein the upper side wall is approximately parallel to the side surface of the substrate.
8. The light-emitting device according to claim 1 , wherein an angle between the roughed surface and the side surface is larger than 90 degrees.
9. The light-emitting device according to claim 1 , wherein the substrate further comprises a border between the roughed surface and the side surface, and the narrowest distance between the border and the top surface is between 0.5 μm and 25 μm.
10. The light-emitting device according to claim 1 , wherein the top surface comprises a plurality of concavo-convex structures.
11. The light-emitting device according to claim 10 , wherein the first portion of the top surface comprises a plurality of first concavo-convex structures and the second portion of the top surface comprises a plurality of second concavo-convex structures; and
wherein the sizes of the plurality of first concavo-convex structures are smaller than the sizes of the plurality of second concavo-convex structures.
12. The light-emitting device according to claim 1 , wherein the top surface further comprises an edge, wherein the first portion surrounds the second portion and is between the edge and the second portion, and wherein a narrowest distance between the second portion and the edge is between 1 μm and 25 μm.
13. The light-emitting device according to claim 1 , wherein a roughness of the roughed surface is larger than that of the side surface.
14. The light-emitting device according to claim 13 , wherein a roughness is a root-mean-square roughness which is between 0.1 μm and 1 μm.
15. The light-emitting device according to claim 1 , wherein the second semiconductor stack comprises a first semiconductor layer, an active layer on the first semiconductor layer and a second semiconductor layer on the active layer, and the first semiconductor stack and the first semiconductor layer have the same conductive type.
16. The light-emitting device according to claim 4 , wherein a thickness of the buffer layer is between 5 nm and 50 nm.
17. The light-emitting device according to claim 1 , further comprising voids between the top surface and the first semiconductor stack.
18. The light-emitting device according to claim 1 , wherein the first side wall comprises multiple pillars formed thereon.