Semiconductor storage device having a support member for a memory controller

1. A semiconductor storage device comprising:

a substrate having first, second, third, and fourth lateral sides and a connector interface on the first lateral side;

a nonvolatile semiconductor memory disposed on a surface of the substrate between the first lateral side and the second lateral side, which is opposite to the first lateral side;

a memory controller disposed on a surface of the substrate between the first lateral side and the second lateral side; and

a support for the memory controller disposed on a surface of the substrate to support at least one side of the memory controller, wherein

the memory controller and the support are disposed on a same surface of the substrate,

the support includes a portion between the memory controller and the third lateral side that extends along an entire side surface of the memory controller,

the support further includes a portion between the memory controller and the first lateral side that extends only partially along a side surface of the memory controller, and the support includes a first portion attached to the substrate and a second portion that is formed on the first portion and has a thermal conductivity lower than that of the first portion.

2. The semiconductor storage according to claim 1 , wherein the support is attached to the substrate with a solder.

3. The semiconductor storage according to claim 2 , wherein a surface of the substrate on which the support is attached has a conductive pattern.

4. The semiconductor storage according to claim 1 , wherein

a thickness of the first portion is less than a thickness of the second portion.

5. The semiconductor storage according to claim 1 , wherein

the memory controller is disposed over a center of the substrate in a direction extending from the first lateral side surface to the second lateral side surface.

6. A semiconductor storage device comprising:

a substrate having first, second, third, and fourth lateral sides and a connector interface on the first lateral side;

a nonvolatile semiconductor memory disposed on a surface of the substrate between the first lateral side and the second lateral side, which is opposite to the first lateral side;

a memory controller disposed on a surface of the substrate between the first lateral side and the second lateral side; and

a first support for the memory controller disposed on a surface of the substrate to support at least one side of the memory controller, wherein

the memory controller and the first support are disposed on a same surface of the substrate,

the first support includes a portion between the memory controller and the third lateral side that extends along an entire side surface of the memory controller, and

the first support further includes a portion between the memory controller and the first lateral side that extends only partially along a side surface of the memory controller; and

a second support for the memory controller disposed on a surface of the substrate to support at least one side of the memory controller, wherein

the memory controller and the second support are disposed on a same surface of the substrate,

the second support includes a portion between the memory controller and the fourth lateral side that extends along an entire side surface of the memory controller,

the second support further includes a portion between the memory controller and the first lateral side that extends only partially along a side surface of the memory controller, and

each of the first and second supports includes a first portion attached to the substrate and a second portion that is formed on the first portion and has a thermal conductivity lower than that of the first portion.

7. The semiconductor storage according to claim 6 , wherein

the first and second supports are attached to the substrate with a solder.

8. The semiconductor storage according to claim 7 , wherein

a surface of the substrate on which the support is attached has a conductive pattern.

9. The semiconductor storage according to claim 6 , wherein

a thickness of the first portion is less than a thickness of the second portion.

10. The semiconductor storage according to claim 6 , wherein

the memory controller is disposed over a center of the substrate in a direction extending from the first lateral side to the second lateral side.