Organic electroluminescent transistor
The present teachings relate to an organic electroluminescent transistor with improved light-emission characteristics. More specifically, the present organic electroluminescent transistor has an emissive ambipolar channel including at least one layer of an n-type semiconductor material, at least one layer of a p-type semiconductor material, and at least one layer of an emissive material arranged between the layers of the p-type and n-type semiconductor materials, with the n-type semiconductor material comprising an electron-transporting compound represented by formula (N-1): where X, Ar, Ar′, R 1 , R 2 , m and m′ are as defined herein.
1. An organic electroluminescent transistor comprising: at least one dielectric layer; at least one control electrode; at least one hole electrode; at least one electron electrode; and an assembly comprising an emissive ambipolar channel, wherein:
said dielectric layer is arranged between said control electrode and said assembly;
said emissive ambipolar channel comprises at least one layer of an n-type semiconductor material, at least one layer of a p-type semiconductor material, and at least one layer of an emissive material arranged between said layers of p-type and n-type semiconductor materials;
said n-type semiconductor material comprises an electron-transporting compound represented by formula (N-1):
wherein:
X is selected from the group consisting of O, S, and Se;
Ar and Ar′, at each occurrence, independently are identical or different monocyclic aryl or heteroaryl groups;
R 1 and R 2 independently are identical or different electron-withdrawing groups selected from the group consisting of —CN, R a , —C(O)R b , and —C(O)OR b ; wherein R a is a C 1-20 alkyl, C 2-20 alkenyl, or C 2-20 alkynyl group substituted with at least one fluoro or cyano group; and R b is selected from the group consisting of H, a C 1-20 alkyl group, a C 2-20 alkenyl group, and a C 2-20 alkynyl group, wherein each of the C 1-20 alkyl group, the C 2-20 alkenyl group, and the C 2-20 alkynyl group optionally is substituted with one or more fluoro and/or cyano groups; and
m and m′ independently are 1 or 2.
2. The transistor of claim 1 , wherein the electron-transporting compound is represented by formula (N-2):
3. The transistor of claim 1 , wherein the electron-transporting compound is represented by formula (N-3):
wherein n is an integer ranging from 1 to 12 (inclusive).
4. The transistor of claim 1 , wherein Ar and Ar′, at each occurrence, independently are selected from the group consisting of a phenyl group, a thienyl group, a thiazolyl group, an isothiazolyl group, a thiadiazolyl group, a furyl group, an oxazolyl group, an isoxazolyl group, an oxadiazolyl group, a pyrrolyl group, a triazolyl group, a tetrazolyl group, a pyrazolyl group, an imidazolyl group, a pyridyl group, a pyrimidyl group, a pyridazinyl group, and a pyrazinyl group.
5. The transistor of claim 4 , wherein the electron-transporting compound is represented by formula (N-4):
6. The transistor of claim 5 , wherein the electron-transporting compound is 2,5-bis(4-(perfluorooctyl)phenyl)thieno[3,2-b]thiophene (N-F2-6):
or 2,5-bis(4-(trifluoromethyl)phenyl)thieno[3,2-b]thiophene (N-F2-6-CF3):
7. The transistor of claim 1 , wherein the p-type semiconductor material comprises a hole-transporting compound selected from the group consisting of an oligothiophene, an acene, and a fused heteroarene.
8. The transistor of claim 1 , wherein the p-type semiconductor material comprises a hole-transporting compound selected from the group consisting of a dithiophene, a quaterthiophene, a thienothiophene, a benzothiophene, a naphthothiophene, a benzothieno[3,2-b][1]benzothiophene, and a dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophenes, each of which can be optionally α- and/or ω-substituted with a hydrocarbon group.
9. The transistor of claim 1 , wherein the p-type semiconductor material comprises a hole-transporting compound represented by formula (P-1), (P-2), (P-3), (P-4), (P-5) or (P-6):
wherein R 3 and R 4 independently are H or identical or different C 1-20 alkyl groups.
10. The transistor of claim 9 , wherein the p-type semiconductor material comprises a hole-transporting compound selected from the group consisting of:
11. The transistor of claim 10 , wherein the emissive material is blue-emitting.
12. The transistor of claim 11 , wherein the emissive material comprises a blend of the arylamine matrix compound of formula (H-1) and the blue emitter of formula (G-1):
a blend of the arylamine matrix compound of formula (H-2) and the blue emitter of formula (G-1):
or
a blend of the arylamine matrix compound of formula (H-3) and the blue emitter of formula (G-1):
13. The transistor of claim 10 , wherein the emissive material is green-emitting.
14. The transistor of claim 13 , wherein the emissive material comprises a blend of the arylamine matrix compound of formula (H-1) and the green emitter of formula (G-2):
a blend of the arylamine matrix compound of formula (H-2) and the green emitter of formula (G-2):
or
a blend of the arylamine matrix compound of formula (H-3) and the green emitter of formula (G-2):
15. The transistor of claim 10 , wherein the emissive material is red-emitting.
16. The transistor of claim 15 , wherein the emissive material comprises a blend of the arylamine matrix compound of formula (H-1) and the red emitter of formula (G-3):
a blend of the arylamine matrix compound of formula (H-2) and the red emitter of formula (G-3):
or
a blend of the arylamine matrix compound of formula (H-3) and the red emitter of formula (G-3):
17. The transistor of claim 1 , wherein each of the electron electrode, hole electrode, and gate electrode independently comprises a metal or a transparent conducting oxide, wherein optionally, such metal or transparent conducting oxide is selected from the group consisting of gold, silver, molybdenum, copper, titanium, chromium, tin-doped indium oxide and combination thereof, and wherein optionally, the electron electrode and the hole electrode are composed of different metals.
18. The transistor of claim 1 , wherein the dielectric layer comprises an electrically insulating material selected from the group consisting of an inorganic oxide or nitride, a molecular dielectric, a polymeric dielectric, and combination thereof, wherein optionally, such inorganic oxide or nitride is selected from the group consisting of SiO 2 , Si 3 N 4 , Al 2 O 3 , ZrO x , Al-doped ZrO x , and HfO x , wherein optionally, such molecular dielectric is a self-assembled nanodielectric, and wherein optionally, such polymeric dielectric is selected from the group consisting of a polyolefin, a polyacrylate, a polyimide, a polyester, and a fluoropolymer.
19. The transistor of claim 1 , further comprising an electron-injection sublayer deposited between said at least one layer of n-type semiconductor material and the electron electrode, and/or a hole-injection sublayer deposited between said at least one layer of p-type semiconductor material and the hole electrode, and/or a passivation layer covering a top surface of the emissive ambipolar channel.
20. An optoelectronic device for producing an image, the optoelectronic device comprising a plurality of identical or different organic electroluminescent transistors according to claim 1 interconnected to each other and deposited on a substrate.