Opto-electrical devices incorporating metal nanowires

1. A process, comprising:

providing a partial optical stack comprising a substrate, a cathode overlying the substrate and an organic stack overlying the cathode, wherein the partial optical stack has a top surface;

providing a donor film comprising a nanostructure layer and a transfer film, wherein the nanostructure layer comprises a plurality of nanostructures; and

contacting the nanostructure layer with the top surface of the partial optical stack.

2. The process of claim 1 , wherein the nanostructure layer comprises a matrix material in which the plurality of nanostructures are dispersed.

3. The process of claim 2 , wherein:

providing the donor film comprises forming the nanostructure layer, and

forming the nanostructure layer comprises:

co-depositing the matrix material and the plurality of nanostructures on the transfer film; and

curing the matrix material.

4. The process of claim 2 , wherein the matrix material is conductive.

5. The process of claim 2 , wherein the matrix material is non-conductive.

6. The process of claim 1 , comprising removing the transfer film after contacting the nanostructure layer with the top surface of the partial optical stack.

7. The process of claim 1 , wherein the plurality of nanostructures comprises silver nanowires.

8. The process of claim 1 , wherein:

providing the donor film comprises forming the nanostructure layer, and

forming the nanostructure layer comprises:

depositing an ink composition comprising the plurality of nanostructures and a volatile component on the transfer film; and

removing the volatile component of the ink composition after the ink composition is deposited on the transfer film.

9. A process comprising:

forming a donor film, comprising:

depositing a plurality of nanostructures on a release liner;

forming a matrix material on the plurality of nanostructures, wherein the matrix material has a top surface;

contacting a transfer film with the top surface of the matrix material; and

removing the release liner to expose a nanostructure surface of the donor film;

providing a partial optical stack comprising a substrate, a cathode overlying the substrate, and an organic stack overlying the cathode, wherein the partial optical stack has a top surface; and

contacting the nanostructure surface of the donor film with the top surface of the partial optical stack.

10. The process of claim 9 , comprising removing the transfer film after contacting the nanostructure surface of the donor film with the top surface of the partial optical stack.

11. The process of claim 9 , wherein the plurality of nanostructures comprises silver nanowires.

12. The process of claim 9 , wherein the top surface of the matrix material is spaced apart from a top surface of the plurality of nanostructures.

13. The process of claim 9 , comprising forming an intermediate conductive layer on the organic stack prior to contacting the nanostructure surface of the donor film with the top surface of the partial optical stack.

14. The process of claim 13 , wherein a top surface of the intermediate conductive layer contacts the nanostructure surface of the donor film upon contacting the nanostructure surface of the donor film with the top surface of the partial optical stack.

15. The process of claim 13 , wherein the intermediate conductive layer comprises at least one of indium tin oxide or a conductive polymer.

16. The process of claim 9 , wherein forming the matrix material comprises:

combining the matrix material with a solvent to form a flowable material;

depositing the flowable material on the plurality of nanostructures; and

curing the flowable material to form a solid layer.

17. The process of claim 16 , wherein curing the flowable material comprises removing the solvent and/or crosslinking the flowable material into a crosslinked matrix as the solid layer.

18. The process of claim 9 , comprising surface treating the nanostructure surface prior to contacting the nanostructure surface of the donor film with the top surface of the partial optical stack.

19. The process of claim 18 , wherein at least one of:

surface treating the nanostructure surface comprises applying at least one of Argon-plasma or Nitrogen-plasma to the nanostructure surface, or

surface treating the nanostructure surface comprises back-etching the matrix material that defines at least some of the nanostructure surface.

20. A process comprising:

forming a donor film, comprising:

depositing a plurality of nanostructures on a release liner;

forming a matrix material on the plurality of nanostructures; and

removing the release liner;

providing a partial optical stack comprising a cathode and an organic stack; and

contacting the donor film with the partial optical stack.