Leadless semiconductor packages, leadframes therefor, and methods of making
View Patent ↗A leadframe includes a frame, a die pad, a contact including a flank adjacent to the frame, a first tie bar between the frame and die pad, and a second tie bar between the die pad and contact. The leadframe is disposed over a carrier. A semiconductor die is disposed over the die pad. An encapsulant is deposited over the leadframe and semiconductor die including between the carrier and half-etched portions of the leadframe. A first trench is formed in the encapsulant to remove a portion of the frame and expose the flank of the contact. A conductive layer is formed over the flank by electroplating. A second trench is formed in the encapsulant through the second tie bar after forming the conductive layer.
1. A method of making a semiconductor device, comprising:
providing a leadframe including,
a frame,
a die pad,
a contact including a flank of the contact adjacent to the frame,
a first tie bar extending between the frame and die pad, and
a second tie bar extending between the die pad and contact;
disposing a semiconductor die over the die pad;
depositing an encapsulant over the leadframe and semiconductor die;
forming a first trench in the encapsulant to remove a portion of the frame and expose the flank of the contact;
forming a conductive layer over the flank of the contact; and
forming a second trench in the encapsulant through the second tie bar after forming the conductive layer.
2. The method of claim 1 , further including:
half-etching the frame, first tie bar, and second tie bar; and
disposing the leadframe on a carrier with the contact and die pad contacting the carrier.
3. The method of claim 2 , further including depositing the encapsulant between the carrier and the frame, first tie bar, and second tie bar.
4. The method of claim 2 , further including half-etching a portion of the contact.
5. The method of claim 1 , further including forming the conductive layer by electroplating.
6. The method of claim 1 , further including forming a bond wire extending between a first portion of the frame and a second portion of the frame, wherein the first trench extends under the bond wire.
7. A method of making a semiconductor device, comprising:
providing a leadframe including,
a frame,
a contact including a flank of the contact adjacent to the frame, and
a tie bar electrically coupled between the contact and frame;
depositing an encapsulant over the leadframe;
forming a first trench in the encapsulant to remove a portion of the frame and expose the flank of the contact, wherein the first trench extends for an entire length of the frame;
forming a conductive layer over the flank of the contact; and
forming a second trench in the encapsulant through the tie bar after forming the conductive layer.
8. The method of claim 7 , further including:
half-etching the tie bar; and
disposing the leadframe over a carrier with the contact on the carrier and the tie bar separated from the carrier.
9. The method of claim 8 , further including depositing the encapsulant between the carrier and tie bar.
10. The method of claim 7 , further including half-etching a portion of the contact.
11. The method of claim 7 , further including forming the conductive layer by electroplating.
12. The method of claim 7 , further including:
half-etching the tie bar from a top surface of the leadframe; and
forming the second trench to remove the tie bar while leaving a portion of the leadframe over the second trench.
13. The method of claim 7 , wherein forming the first trench completely removes the frame.