Method and system for producing wavelength-stabilized light
In the prior art, tunable lasers utilizing silicon-based tunable ring filters and III-V semiconductor-based gain regions required the heterogeneous integration of independently formed silicon and III-V semiconductor based optical elements, resulting in large optical devices requiring a complex manufacturing process (e.g., airtight packaging to couple the devices formed on different substrates, precise alignment for the elements, etc.). Embodiments of the invention eliminate the need for bulk optical elements and hermetic packaging, via the use of hybridized III-V/silicon gain regions and silicon optical components, such as silicon wavelength filters and stabilized wavelength references, thereby reducing the size and manufacturing complexity of tunable lasing devices.
1. A method, comprising:
propagating light in a waveguide through a gain region of a silicon substrate and through a tunable ring filter defined by the silicon substrate to form amplified, wavelength-filtered light in the waveguide;
sensing, with a temperature sensor, a temperature of the tunable ring filter to determine a wavelength of light of the tunable ring filter; and
based on the determination of wavelength of light from the temperature, altering the wavelength of light passed from the tunable ring filter to the gain region,
wherein the tunable ring filter is arranged to minimize changes in refractive index due to stress, so that the wavelength of light of the tunable ring filter is directly related to a specified temperature value.
2. The method of claim 1 , wherein the waveguide forms a laser cavity that includes the gain region and the tunable ring filter, and extends to an output coupler that extracts a portion of the amplified, wavelength-filtered light from the waveguide.
3. The method of claim 2 , further comprising:
propagating the light in the waveguide through a phase control region formed in a passive region of the silicon substrate; and
adjusting resonant cavity modes of the laser cavity by propagating the light through the phase control region.
4. The method of claim 3 , wherein the phase control region is positioned along the waveguide between the gain region and the output coupler.
5. The method of claim 2 , further comprising propagating light bi-directionally within the laser cavity.
6. The method of claim 1 ; wherein the temperature sensor includes at least one resistive temperature device formed from the silicon substrate.
7. A system, comprising:
a silicon substrate defining a waveguide;
a gain region of the silicon substrate; the gain region configured to amplify light propagating in the waveguide;
a tunable ring filter defined by the silicon substrate, the tunable ring filter configured to filter a wavelength of light propagating in the waveguide;
a temperature sensor configured to sense a temperature of the tunable ring filter to determine the wavelength of light filtered by the tunable ring filter; and
a controller configured to, based on the determination of wavelength of light from the temperature, alter the wavelength of light passed from the tunable ring filter to the gain region,
wherein the tunable ring filter is arranged to minimize changes in refractive index due to stress, so that the wavelength of light of the tunable ring filter is directly related to the specified temperature value.
8. The system of claim 7 , wherein the waveguide forms a laser cavity that includes the gain region and the tunable ring filter, and extends to an output coupler.
9. The system of claim 8 , further comprising:
a phase control region formed in a passive region of the silicon substrate, the phase control region configured to adjust resonant cavity modes of the laser cavity.
10. The system of claim 9 , wherein the phase control region is positioned along the waveguide between the gain region and the output coupler.
11. The system of claim 8 , wherein the laser cavity is configured to propagate light hi-directionally.
12. The system of claim 7 , wherein the temperature sensor includes at least one resistive temperature device formed from the silicon substrate.