Solar cell

1. A solar cell comprising:

a semiconductor substrate;

electrodes formed on a rear surface of the semiconductor substrate;

a silicon oxide layer located on a front surface of the semiconductor substrate;

a silicon nitride layer directly located on the silicon oxide layer at the front surface of the semiconductor substrate, and having a first refractive index greater than a refractive index of the silicon oxide layer and a first extinction coefficient greater than an extinction coefficient of the silicon oxide layer, the silicon nitride layer not including carbon; and

a silicon oxycarbide layer directly located on the silicon nitride layer at the front surface of the semiconductor substrate to form an outermost layer among the silicon oxide layer, the silicon nitride layer, and the silicon oxycarbide layer, and having a second refractive index less than the first refractive index and a second extinction coefficient greater than the first extinction coefficient,

wherein the second extinction coefficient of the silicon oxycarbide layer with respect to light having the wavelength of 400 nm or shorter is greater than the first extinction coefficient of the silicon nitride layer with respect to light having the wavelength of 400 nm or shorter by a value greater than 0.01,

wherein a thickness of the silicon oxycarbide layer is less than a thickness of the silicon nitride layer,

wherein a thickness of the silicon oxide layer is less than each of the thickness of the silicon nitride layer and the thickness of the silicon oxycarbide layer,

wherein electrodes penetrating the silicon oxide layer, the silicon nitride layer, and the silicon oxycarbide layer are not formed thereon and the electrodes are not formed at the front surface of the semiconductor substrate, so the silicon oxide layer, the silicon nitride layer, and the silicon oxycarbide layer are formed entirely,

wherein the silicon oxycarbide layer has a chemical formula of SiO 1-y C y and y is 0.5 to 0.9, and 0.9,

wherein among the silicon oxide layer, the silicon nitride layer, and the silicon oxycarbide layer, the silicon oxycarbide layer having a largest extinction coefficient is located on the outermost layer, and a surface thereof in contact with the semiconductor substrate is formed so as not to contain carbon to retain a passivation effect, and

wherein the second extinction coefficient of the silicon oxycarbide layer with respect to light having the wavelength of 400 nm or shorter is 0.02˜0.015 and the silicon oxycarbide layer has a thickness of 25 nm to 90 nm.

2. The solar cell according to claim 1 , wherein:

the silicon nitride layer has the first refractive index of 1.95 to 2.05 and a thickness of 50 nm to 90 nm; and

the silicon oxycarbide layer has the second refractive index of 1.4 to 1.6.

3. The solar cell according to claim 1 , further comprising a control passivation layer located between the rear surface of the semiconductor substrate and first and second conductivity-type regions at the rear surface of the semiconductor substrate,

wherein a barrier region is located between the first conductivity-type region and the second conductivity-type region on the control passivation layer.

4. The solar cell according to claim 1 , wherein a carbon content in stacked layers of silicon oxycarbide layer, the silicon nitride layer, and the silicon oxide layer is decreased in an incidence light direction of the solar cell.

5. The solar cell according to claim 1 , wherein the silicon oxide layer is located directly on the front surface of the semiconductor substrate.

6. The solar cell according to claim 1 , wherein the silicon nitride layer is an intervening layer between the silicon oxycarbide layer and the silicon oxide layer.

7. The solar cell according to claim 1 , wherein an amount of carbon in the silicon oxide layer and the silicon nitride layer is the same.