Blister-free polycrystalline silicon for solar cells
View Patent ↗Described herein are methods of fabricating solar cells. In an example, a method of fabricating a solar cell includes forming an amorphous dielectric layer on the back surface of a substrate opposite a light-receiving surface of the substrate. The method also includes forming a microcrystalline silicon layer on the amorphous dielectric layer by plasma enhanced chemical vapor deposition (PECVD). The method also includes forming an amorphous silicon layer on the microcrystalline silicon layer by PECVD. The method also includes annealing the microcrystalline silicon layer and the amorphous silicon layer to form a homogeneous polycrystalline silicon layer from the microcrystalline silicon layer and the amorphous silicon layer. The method also includes forming an emitter region from the homogeneous polycrystalline silicon layer.
1. A back contact solar cell, comprising:
a substrate having a light-receiving surface and a back surface;
a first polycrystalline silicon emitter region of a first conductivity type disposed on a first thin dielectric layer disposed on the back surface of the substrate;
a second polycrystalline silicon emitter region of a second, different, conductivity type disposed on a second thin dielectric layer disposed on the back surface of the substrate, a portion of the second polycrystalline silicon emitter region further formed over a portion of the first polycrystalline silicon emitter region, wherein the second polycrystalline silicon emitter region is a blister-free polycrystalline silicon emitter region of the second conductivity type;
a third thin dielectric layer disposed laterally directly between the first and second polycrystalline silicon emitter regions;
a first conductive contact structure disposed on the first polycrystalline silicon emitter region; and
a second conductive contact structure disposed on the second polycrystalline silicon emitter region.
2. The back contact solar cell of claim 1 , wherein the first polycrystalline silicon emitter region is a blister-free polycrystalline silicon emitter region of the first conductivity type.
3. The back contact solar cell of claim 1 , further comprising:
an insulator layer disposed on the first polycrystalline silicon emitter region, wherein the first conductive contact structure is disposed through the insulator layer, and wherein a portion of the second polycrystalline silicon emitter region overlaps the insulator layer but is separate from the first conductive contact structure.
4. The back contact solar cell of claim 1 , further comprising:
an insulator layer disposed on the first polycrystalline silicon emitter region; and
a polycrystalline silicon layer of the second conductivity type disposed on the insulator layer, wherein the first conductive contact structure is disposed through the polycrystalline silicon layer of the second conductivity type and through the insulator layer.
5. The back contact solar cell of claim 1 , wherein the second polycrystalline silicon emitter region and the second thin dielectric layer are disposed in a recess disposed in the substrate.
6. The back contact solar cell of claim 5 , wherein the recess has a texturized surface.
7. The back contact solar cell of claim 1 , wherein the first polycrystalline silicon emitter region and the first thin dielectric layer are disposed on a flat portion of the back surface of the substrate, and wherein the second polycrystalline silicon emitter region and the second thin dielectric layer are disposed on a texturized portion of the back surface of the substrate.
8. The back contact solar cell of claim 1 , wherein the first and second conductive contact structures each comprises an aluminum-based metal seed layer disposed on the first and second polycrystalline silicon emitter regions, respectively, and each further comprises a metal layer disposed on the aluminum-based metal seed layer.
9. A back contact solar cell, comprising:
a substrate having a light-receiving surface and a back surface;
a first polycrystalline silicon emitter region of a first conductivity type disposed on a first thin dielectric layer disposed on the back surface of the substrate, wherein the first polycrystalline silicon emitter region is a blister-free polycrystalline silicon emitter region of the first conductivity type;
a second polycrystalline silicon emitter region of a second, different, conductivity type disposed on a second thin dielectric layer disposed on the back surface of the substrate, a portion of the second polycrystalline silicon emitter region further formed over a portion of the first polycrystalline silicon emitter region;
a third thin dielectric layer disposed laterally directly between the first and second polycrystalline silicon emitter regions;
a first conductive contact structure disposed on the first polycrystalline silicon emitter region; and
a second conductive contact structure disposed on the second polycrystalline silicon emitter region.
10. The back contact solar cell of claim 9 , further comprising:
an insulator layer disposed on the first polycrystalline silicon emitter region, wherein the first conductive contact structure is disposed through the insulator layer, and wherein a portion of the second polycrystalline silicon emitter region overlaps the insulator layer but is separate from the first conductive contact structure.
11. The back contact solar cell of claim 9 , further comprising:
an insulator layer disposed on the first polycrystalline silicon emitter region; and
a polycrystalline silicon layer of the second conductivity type disposed on the insulator layer, wherein the first conductive contact structure is disposed through the polycrystalline silicon layer of the second conductivity type and through the insulator layer.
12. The back contact solar cell of claim 9 , wherein the second polycrystalline silicon emitter region and the second thin dielectric layer are disposed in a recess disposed in the substrate.
13. The back contact solar cell of claim 12 , wherein the recess has a texturized surface.
14. The back contact solar cell of claim 12 , wherein the first polycrystalline silicon emitter region and the first thin dielectric layer are disposed on a flat portion of the back surface of the substrate, and wherein the second polycrystalline silicon emitter region and the second thin dielectric layer are disposed on a texturized portion of the back surface of the substrate.
15. The back contact solar cell of claim 9 , wherein the first and second conductive contact structures each comprises an aluminum-based metal seed layer disposed on the first and second polycrystalline silicon emitter regions, respectively, and each further comprises a metal layer disposed on the aluminum-based metal seed layer.
16. A back contact solar cell, comprising:
a substrate having a light-receiving surface and a back surface;
a first polycrystalline silicon emitter region of a first conductivity type disposed on a first thin dielectric layer disposed on the back surface of the substrate, wherein the first polycrystalline silicon emitter region is a blister-free polycrystalline silicon emitter region of the first conductivity type;
a second polycrystalline silicon emitter region of a second, different, conductivity type disposed on a second thin dielectric layer disposed on the back surface of the substrate, a portion of the second polycrystalline silicon emitter region further formed over a portion of the first polycrystalline silicon emitter region, wherein the second polycrystalline silicon emitter region is a blister-free polycrystalline silicon emitter region of the second conductivity type;
a third thin dielectric layer disposed laterally directly between the first and second polycrystalline silicon emitter regions;
a first conductive contact structure disposed on the first polycrystalline silicon emitter region; and
a second conductive contact structure disposed on the second polycrystalline silicon emitter region, wherein the first and second conductive contact structures each comprises an aluminum-based metal seed layer disposed on the first and second polycrystalline silicon emitter regions, respectively, and each further comprises a metal layer disposed on the aluminum-based metal seed layer.
17. The back contact solar cell of claim 16 , further comprising:
an insulator layer disposed on the first polycrystalline silicon emitter region, wherein the first conductive contact structure is disposed through the insulator layer, and wherein a portion of the second polycrystalline silicon emitter region overlaps the insulator layer but is separate from the first conductive contact structure.
18. The back contact solar cell of claim 16 , further comprising:
an insulator layer disposed on the first polycrystalline silicon emitter region; and
a polycrystalline silicon layer of the second conductivity type disposed on the insulator layer, wherein the first conductive contact structure is disposed through the polycrystalline silicon layer of the second conductivity type and through the insulator layer.
19. The back contact solar cell of claim 16 , wherein the second polycrystalline silicon emitter region and the second thin dielectric layer are disposed in a recess disposed in the substrate.
20. The back contact solar cell of claim 16 , wherein the first polycrystalline silicon emitter region and the first thin dielectric layer are disposed on a flat portion of the back surface of the substrate, and wherein the second polycrystalline silicon emitter region and the second thin dielectric layer are disposed on a texturized portion of the back surface of the substrate.