Electrostatic protection circuit, semiconductor integrated circuit device, and electronic device

1. An electrostatic protection circuit connected to a first terminal via a first node and connected to a second terminal via a second node, comprising:

a plurality of circuit blocks that are connected in series between the first node and the second node,

wherein at least one circuit block out of the plurality of circuit blocks includes:

a zener diode for setting a trigger voltage, and enters a conduction state when a potential of the first node becomes higher than a potential of the second node and a voltage between both ends of the circuit block including the zener diode reaches a breakdown voltage of the zener diode;

a thyristor that has an anode connected to one end of the circuit block including the zener diode and a cathode connected to another end of the circuit block including the zener diode; and

a resistance element that is connected between a gate of the thyristor and one of the cathode and the anode of the thyristor, the resistance element being directly connected to the gate of the thyristor and directly connected to the one of the cathode and the anode of the thyristor,

wherein the zener diode is connected between the gate of the thyristor and the other of the cathode and the anode of the thyristor, the zener diode being directly connected to the gate of the thyristor and the other of the cathode and the anode of the thyristor, and

wherein the zener diode allows current to flow to the resistance element or to the gate of the thyristor when the potential of the first node becomes higher than the potential of the second node and the voltage between both ends of the circuit block including the zener diode reaches the breakdown voltage.

2. The electrostatic protection circuit according to claim 1 ,

wherein the circuit block including the zener diode further includes:

a bipolar transistor that has a collector connected to one end of the circuit block including the zener diode and an emitter connected to another end of the circuit block including the zener diode; and

a resistance element that is connected between the emitter and a base of the bipolar transistor, and

the zener diode is connected between the collector and the base of the bipolar transistor, and allows current to flow to the resistance element or to the base of the bipolar transistor when the potential of the first node becomes higher than the potential of the second node and the voltage between both ends of the circuit block including the zener diode reaches the breakdown voltage.

3. The electrostatic protection circuit according to claim 1 ,

wherein another at least one circuit block out of the plurality of circuit blocks includes a MOS transistor that has a drain connected to one end of the other at least one circuit block and a source and a gate connected to another end of the other at least one circuit block, and that allows discharge current to flow when the potential of the first node becomes higher than the potential of the second node and the voltage between both ends of the other at least one circuit block reaches a breakdown voltage.

4. The electrostatic protection circuit according to claim 1 ,

wherein another at least one circuit block out of the plurality of circuit blocks includes a bipolar transistor that has a collector connected to one end of the other at least one circuit block and an emitter connected to another end of the other at least one circuit block, and that allows discharge current to flow when the potential of the first node becomes higher than the potential of the second node and the voltage between both ends of the other at least one circuit block reaches a breakdown voltage.

5. The electrostatic protection circuit according to claim 3 ,

wherein a predetermined region, of the drain or the source of the MOS transistor, including a portion that a contact contacts is silicided, and a remaining region of the drain or the source is not silicided.

6. The electrostatic protection circuit according to claim 4 ,

wherein a predetermined region, of the collector of the bipolar transistor, including a portion that a contact contacts is silicided, and a remaining region of the collector is not silicided.

7. The electrostatic protection circuit according to claim 1 ,

wherein another at least one circuit block out of the plurality of circuit blocks includes:

a thyristor that has an anode connected to one end of the other at least one circuit block and a cathode connected to another end of the other at least one circuit block;

a resistance element that is connected between a gate of the thyristor and one of the cathode and the anode of the thyristor; and

a zener diode that is connected between the gate of the thyristor and the other of the cathode and the anode of the thyristor, and that allows current to flow to the resistance element or to the gate of the thyristor when the potential of the first node becomes higher than the potential of the second node and the voltage between both ends of the circuit block reaches a second breakdown voltage.

8. A semiconductor integrated circuit device comprising the electrostatic protection circuit according to claim 1 .

9. An electronic device comprising the semiconductor integrated circuit device according to claim 8 .