Semiconductor device having fuse elements
View Patent ↗Provided is a semiconductor device preventing readhesion of conductive body which forms fuse elements and breakage of the fuse elements. The semiconductor device includes a first insulating film formed on a semiconductor substrate, a plurality of fuse elements formed on the first insulating film adjacent to one another, a protective insulating film covering at least side surfaces of the fuse elements, and a second insulating film formed of one of a BPSG film and a PSG film to cover the fuse elements and the protective insulating film. The protective insulating film is higher in mechanical strength than the second insulating film.
1. A semiconductor device, comprising:
a first insulating film formed on a semiconductor substrate;
an unblown fuse element and a fuse blow mark which is left by fuse blowing, each formed adjacent to one another on the first insulating film;
a protective insulating film for covering at least side surfaces of the unblown fuse element; and
a second insulating film formed of one of a BPSG film and a PSG film to cover the unblown fuse element and the protective insulating film,
the protective film and the second insulating film not covering the fuse blow mark;
the protective insulating film being higher in mechanical strength than the second insulating film.
2. A semiconductor device according to claim 1 , wherein the protective insulating film comprises first portions for covering the side surfaces of the plurality of fuse elements, and second portions for covering top surfaces of the plurality of fuse elements.
3. A semiconductor device according to claim 2 , wherein the first portions of the protective insulating film are thicker than the second portions.
4. A semiconductor device according to claim 2 , wherein the second portions of the protective insulating film have a thickness of 100 nm or less.
5. A semiconductor device according to claim 1 , wherein the protective insulating film comprises one of a silicon nitride film and a silicon oxynitride film.
6. A semiconductor device according to claim 1 , wherein the plurality of fuse elements comprise one of a polysilicon film, a high melting point metal film, and a laminate film in which one of a titanium silicide film, a tungsten silicide film, and a cobalt silicide film is layered on a polysilicon film.