Method of manufacturing semiconductor device including channel layer
View Patent ↗A semiconductor device according to an embodiment of the invention includes a pipe channel layer including a first portion and a second portion protruding from the first portion, first channel pillars protruding from the second portion of the pipe channel layer, and second channel pillars protruding from the first portion of the pipe channel layer.
1. A method of manufacturing a semiconductor device, comprising:
forming a lower structure including a pipe channel region filled with a first sacrificial layer pattern and a second sacrificial layer pattern, wherein the second sacrificial layer pattern is in contact with and disposed on the first sacrificial layer pattern;
alternately stacking first material layers and second material layers on the lower structure;
forming first channel holes and second channel holes passing through the first and second material layers, wherein the first channel holes open the second sacrificial layer pattern and the second channel holes open the first sacrificial layer pattern;
opening the pipe channel region by removing the first and second sacrificial layer patterns through the first and second channel holes; and
forming a channel layer in the first and second channel holes and the pipe channel region.
2. The method of claim 1 , wherein the forming of the lower structure including the pipe channel region filled with the first and second sacrificial layer patterns comprises:
forming a pipe trench by etching a first conductive layer;
forming the first sacrificial layer pattern in the pipe trench;
forming the second sacrificial layer pattern on a portion of the first sacrificial layer pattern; and
forming an upper layer that surrounds the second sacrificial layer pattern on the first conductive layer and covers the first sacrificial layer pattern.
3. The method of claim 1 , wherein the second sacrificial layer pattern opens both sides of the first sacrificial layer pattern and is disposed on a center area of the first sacrificial layer pattern.
4. The method of claim 1 , further comprising:
forming a first slit passing through the first material layers and the second material layers between the first channel holes, and a second slit passing through the first material layers and the second material layers between the first channel hole and the second channel hole after forming the channel layer.