Semiconductor device and semiconductor memory device
View Patent ↗A semiconductor device according to the embodiment includes a plurality of semiconductor layers arranged along a first direction and a second direction, wherein each of the semiconductor layers includes a first semiconductor layer and second semiconductor layers positioned at both upper and lower sides of the first semiconductor layer, and a gate electrode which faces the first semiconductor layer. A row of the semiconductor layer in the first direction is oblique to a row of the semiconductor layer in the second direction. At least one part of peripheral faces of the first semiconductor layer is in contact with the gate electrode along the first direction.
1. A semiconductor device comprising:
a plurality of semiconductor layers arranged along a first direction and a second direction, wherein each of the semiconductor layers comprises a first semiconductor layer and second semiconductor layers positioned at both upper and lower sides of the first semiconductor layer; and
a gate electrode which faces the first semiconductor layer, wherein
a row of the semiconductor layers in the first direction is oblique to a row of the semiconductor layers in the second direction, and at least one part of peripheral faces of the first semiconductor layer is in contact with the gate electrode along the first direction.
2. The semiconductor device according to claim 1 , wherein
a horizontal cross-section shape of the first semiconductor layer is a quadrilateral shape, which first and second sides are in contact with the gate electrodes and face each other, and which third and fourth sides are in contact with the first and second sides and face each other.
3. The semiconductor device according to claim 2 , wherein
the horizontal cross-section shape of the first semiconductor layer is a parallelogram.
4. The semiconductor device according to claim 3 , wherein
a distance between adjacent first sides is equal to or greater than a length of the first side of the parallelogram, and a distance between adjacent third sides is equal to or greater than a length of the third side of the parallelogram.
5. The semiconductor device according to claim 3 , wherein
an angle between the first side and the third side is equal to or greater than 30 degrees and lesser than 90 degrees.
6. The semiconductor device according to claim 1 , wherein
an insulating film is between adjacent semiconductor layers arranged along the first direction.
7. The semiconductor device according to claim 1 , wherein
the first semiconductor layer is a P-type semiconductor layer, and the second semiconductor layers are N-type semiconductor layers.
8. The semiconductor device according to claim 1 , wherein
a memory cell is positioned on each semiconductor layer, and a global bit line is positioned under each semiconductor layer.
9. The semiconductor device according to claim 8 , wherein
the memory cell is a ReRAM.
10. The semiconductor device according to claim 2 , wherein
the horizontal cross-section shape is a trapezoid, which the first side is oblique to the third side, and which the second side is perpendicular to the third side.
11. A semiconductor memory device comprising:
a plurality of semiconductor layers arranged along a first direction and a second direction, wherein each of the semiconductor layers comprises a first semiconductor layer and second semiconductor layers positioned at both upper and lower sides of the first semiconductor layer;
a gate electrode which faces the first semiconductor layer,
a memory cell on each semiconductor layer; and
a global bit line under each semiconductor layer, wherein
a row of the semiconductor layer in the first direction is oblique to a row of the semiconductor layer in the second direction, and at least one part of peripheral faces of the first semiconductor layer is in contact with the gate electrode along the first direction.
12. The semiconductor memory device according to claim 11 , wherein
a horizontal cross-section shape of the first semiconductor layer is a quadrilateral shape, which first and second sides are in contact with the gate electrodes and face each other, and which third and fourth sides are in contact with the first and second sides and face each other.
13. The semiconductor memory device according to claim 12 , wherein
the horizontal cross-section shape of the first semiconductor layer is a parallelogram.
14. The semiconductor memory device according to claim 13 , wherein
a distance between adjacent first sides is equal to or greater than a length of the first side of the parallelogram, and a distance between adjacent third sides is equal to or greater than a length of the third side of the parallelogram.
15. The semiconductor memory device according to claim 13 , wherein,
an angle between the first side and the third side is equal to or greater than 30 degrees and lesser than 90 degrees.
16. The semiconductor memory device according to claim 11 , wherein
an insulating film is between adjacent semiconductor layers arranged along the first direction.
17. The semiconductor memory device according to claim 11 , wherein
the first semiconductor layer is a P-type semiconductor layer, and the second semiconductor layers are N-type semiconductor layers.
18. The semiconductor memory device according to claim 11 , wherein
the memory cell is a ReRAM.
19. The semiconductor memory device according to claim 12 , wherein
the horizontal cross-section shape is a trapezoid, which the first side is oblique to the third side, and which the second side is perpendicular to the third side.