Method of strain engineering and related optical device using a gallium and nitrogen containing active region

1. A system comprising:

a laser display; and

a laser device configured to provide light for the laser display, the laser device comprising:

a gallium and nitrogen containing substrate including a surface region and a first lattice constant;

a single or plurality of strained regions acting as an optical confinement region overlying the surface region, the strained region having a second lattice constant, the second lattice constant being larger than the first lattice constant;

a strain control region disposed between or above one or more of the strained regions having a third lattice constant, the third lattice constant being substantially equivalent to the second lattice constant, the strain control region being configured to maintain at least a quantum well region within a predetermined strain state;

a plurality of quantum well regions overlying the optical confinement region, each of the plurality of quantum well regions having a fourth lattice constant, the fourth lattice constant being substantially equivalent to the second lattice constant, whereupon the strain control region has a higher bandgap than the strained region and the quantum well regions.

2. The system of claim 1 wherein:

the strained region comprises an interface region between the substrate and the strain control region; and

the interface region comprises a plurality of dislocations.

3. The system of claim 1 wherein the surface region is configured in a {20-21} semi-polar orientation and the device is a laser diode device, or the surface region is configured to be in an off-set of a {20-21} orientation and the strained region is at least partially relaxed.

4. The system of claim 1 further comprising:

at least one barrier region sandwiched between a pair of quantum well regions;

each of the barrier regions comprising GaN, InGaN, AlGaN, or AlInGaN; and

each of the barrier regions ranges in thickness from 1.5 nm to 12 nm.

5. The system of claim 1 wherein:

the strained region comprises a single layer of InGaN;

the strained region has a thickness ranging from 20 to 80 nm with 2 to 20% InN content;

the strained region is overlaid with a single strain control layer comprised of GaN or AlGaN; and

the strain control layer has a thickness ranging from 2-20 nm with 2 to 40% AlN content.

6. The system of claim 1 wherein:

the strained region comprises multiple layers of GaN, AlN, AlInN, AlGaInN, or InGaN;

the multiple layers have a thickness ranging from 10 to 50 nm with 2 to 25% InN content;

the multiple layers are separated by strain control layers comprises of AlGaN;

the strain control layers have thickness ranging from 2-20 nm with 2 to 40% AlN content.

7. The system of claim 1 wherein:

the strained region comprises multiple layers of InGaN;

the InGaN layers have a thickness ranging from 10 to 50 nm with 2 to 25% InN content;

the InGaN layers are separated by strain control layers comprised of GaN;

there are a plurality of pairs of strained and strain control layers;

the thickness of the strained layers is equal or decreases with each subsequently deposited layer;

the composition of strained layers is equal or increases in InN with each subsequently deposited layer.