Light emitting device reflective bank structure
Reflective bank structures for light emitting devices are described. The reflective bank structure may include a substrate, an insulating layer on the substrate, and an array of bank openings in the insulating layer with each bank opening including a bottom surface and sidewalls. A reflective layer spans sidewalls of each of the bank openings in the insulating layer.
1. A light emitting structure comprising:
a substrate;
a bank layer on the substrate;
a vertical light emitting diode (LED) device mounted on a conductive contact pad adjacent the bank layer, wherein the vertical LED device includes:
a micro p-n diode that includes a top surface, a bottom surface, and a plurality of layers including a p-doped layer, an n-doped layer, and a quantum well layer between the p-doped layer and the n-doped layer;
a top conductive electrode; and
a bottom conductive electrode, wherein the bottom surface of the micro p-n diode is wider than the bottom conductive electrode;
a transparent conductor layer over and in electrical contact with the top conductive electrode of the vertical LED device; and
an electrode terminal on the bank layer, wherein the transparent conductor layer electrically connects the top conductive electrode with the electrode terminal.
2. The light emitting structure of claim 1 , wherein the bottom conductive electrode comprises a metal stack.
3. The light emitting structure of claim 1 , wherein the bottom conductive electrode is bonded to the conductive contact pad with a bonding layer comprising a material selected from the group consisting of indium, gold, silver, molybdenum, tin, and aluminum.
4. The light emitting structure of claim 1 , wherein the electrode terminal is a cathode, and the conductive contact pad is an anode.
5. The light emitting structure of claim 1 , further comprising a passivation layer spanning sidewalls of the micro p-n diode.
6. The light emitting structure of claim 5 , further comprising an array of vertical LED devices mounted to an array of conductive pads.
7. The light emitting structure of claim 6 , wherein the sidewall passivation layer spans sidewalls of each micro p-n diode, and the transparent conductor layer electrically connects the top conductive electrode of each vertical LED device with the electrode terminal.
8. The light emitting structure of claim 1 , wherein the vertical LED device has a maximum width of 1 um-100 um and the micro p-n diode includes one or more of the plurality of layers is based on II-VI materials or III-V materials.
9. The light emitting structure of claim 8 , wherein the bottom conductive electrode comprises a metal stack.
10. The light emitting structure of claim 8 , wherein the bottom conductive electrode is bonded to the conductive contact pad with a bonding layer comprising a material selected from the group consisting of indium, gold, silver, molybdenum, tin, and aluminum.
11. The light emitting structure of claim 8 , further comprising an electrode terminal on the bank layer, wherein the transparent conductor layer electrically connects the top conductive electrode with the electrode terminal.
12. The light emitting structure of claim 11 , wherein the electrode terminal is a cathode, and the conductive contact pad is an anode.
13. The light emitting structure of claim 11 , further comprising a passivation layer spanning sidewalls of the micro p-n diode.
14. The light emitting structure of claim 13 , further comprising an array of vertical LED devices mounted to an array of conductive pads.
15. The light emitting structure of claim 14 , wherein the sidewall passivation layer spans sidewalls of each micro p-n diode, and the transparent conductor layer electrically connects the top conductive electrode of each vertical LED device with the electrode terminal.
16. The light emitting structure of claim 15 , further comprising one or more integrated circuits interconnected with the array of conductive pads.