IP Library Granted Patent US 10,468,736
Granted Patent B2
US 10,468,736 · App. 15/427,769 · Granted Nov 5, 2019

Radar assembly with ultra wide band waveguide to substrate integrated waveguide transition

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Quick Facts
Patent No.
US 10,468,736
App. No.
15/427,769
Granted
Nov 5, 2019
Kind
B2
Abstract

A radar assembly includes a rectangular-waveguide (RWG) and a printed-circuit-board. The rectangular-waveguide (RWG) propagates electromagnetic energy in a transverse electric mode (TE 10 ) and in a first direction. The printed-circuit-board includes a plurality of conductor-layers oriented parallel to each other. The printed-circuit-board defines a substrate-integrated-waveguide (SIW) that propagates the electromagnetic energy in a transverse electric mode (TE 10 ) and in a second direction perpendicular to the first direction, and defines a transition that propagates the electromagnetic energy between the rectangular-wave-guide and the substrate-integrated-waveguide. The transition includes apertures defined by at least three of the plurality of conductor-layers.

Claims (6)

1. An assembly comprising:

a rectangular-waveguide (RWG) that propagates electromagnetic energy in a transverse electric mode TE 10 and in a first direction; and

a printed-circuit-board that includes a plurality of conductor-layers oriented parallel to each other, said printed-circuit-board defines a substrate-integrated-waveguide (SIW) that propagates electromagnetic energy in a transverse electric mode TE 10 and in a second direction perpendicular to the first direction, and defines a transition that propagates the electromagnetic energy between the rectangular-wave-guide and the substrate-integrated-waveguide, wherein the transition includes apertures defined by at least three of the plurality of conductor-layers.

2. The assembly in accordance with claim 1 , wherein a first layer of the plurality of conductor-layers is adjacent the rectangular-waveguide, said first layer defines a first aperture characterized by a first-size, and a last layer of the plurality of conductor-layers is adjacent to the substrate-integrated-waveguide and defines a horizontal-boundary of the substrate-integrated-waveguide, said last layer defines a last aperture characterized by a last-size greater than the first-size.

3. The assembly in accordance with claim 2 , wherein an intermediate layer of the plurality of conductor-layers is located between the first layer and the last layer of the transition, said intermediate layer defines an intermediate aperture characterized by an intermediate-size between the last-size and the first-size.

4. The assembly in accordance with claim 1 , wherein the transition includes a short-wall that defines a vertical-boundary of the transition.

Assignments (5)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 11, 2024
From: APTIV MANUFACTURING MANAGEMENT SERVICES S.À R.L.
To: APTIV TECHNOLOGIES AG
Reel/Frame 066551/0219 →
MERGER Recorded Feb 11, 2024
From: APTIV TECHNOLOGIES (2) S.À R.L.
To: APTIV MANUFACTURING MANAGEMENT SERVICES S.À R.L.
Reel/Frame 066566/0173 →
ENTITY CONVERSION Recorded Feb 11, 2024
From: APTIV TECHNOLOGIES LIMITED
To: APTIV TECHNOLOGIES (2) S.À R.L.
Reel/Frame 066746/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 26, 2018
From: DELPHI TECHNOLOGIES INC.
To: APTIV TECHNOLOGIES LIMITED
Reel/Frame 047153/0902 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 8, 2017
From: MANGAIAHGARI, SANKARA NARAYANA
To: DELPHI TECHNOLOGIES, INC.
Reel/Frame 041205/0754 →