DC-DC voltage conversion device
View Patent ↗In a DC-DC voltage conversion device, overheat of a diode element connected in anti-parallel with a semiconductor switching element is a problem, and in order to resolve this, a temperature of a semiconductor switching element of a main conversion circuit is detected, a temperature of a diode element connected in parallel with the semiconductor switching element is calculated using a correction calculation of the detected semiconductor switching element temperature value in accordance with a step-up ratio of the DC-DC voltage conversion device, and diode element overheat protection is carried out in accordance with the calculated temperature value.
1. A DC-DC voltage conversion device, comprising:
a semiconductor switching element of a main conversion circuit;
a diode element connected in parallel with the semiconductor switching element;
a temperature detection unit that detects a temperature of the semiconductor switching element;
a diode element temperature calculation unit that calculates a temperature of the diode element using a correction calculation that utilizes the semiconductor switching element temperature detected by the temperature detection unit and a step-up ratio of the DC-DC voltage conversion device; and
overheat protection means that carries out control for protecting the diode element in accordance with a value of the calculated temperature.
2. The DC-DC voltage conversion device according to claim 1 , wherein the diode element temperature calculation unit calculates the diode element temperature using a temperature ratio coefficient that is variable in accordance with a step-up ratio that is a ratio between a secondary side voltage and primary side voltage of the DC-DC voltage conversion device.
3. The DC-DC voltage conversion device according to claim 2 , wherein characteristics of the temperature ratio coefficient of the diode element temperature calculation unit differ between a time when the DC-DC voltage conversion device performs a discharging operation, whereby power is supplied from the primary side to the secondary side, and a time when the DC-DC voltage conversion device performs a charging operation, whereby power is supplied from the secondary side to the primary side.
4. The DC-DC voltage conversion device according to claim 2 , wherein the temperature ratio coefficient of the diode element temperature calculation unit is a value fixed by referring to a table that has the step-up ratio and a magnitude of current flowing through the DC-DC voltage conversion device as input variables.
5. The DC-DC voltage conversion device according to claim 1 , wherein the diode element temperature calculation unit calculates the diode element temperature based on a coolant temperature of the main conversion circuit correlated to the magnitude of current passing through the DC-DC voltage conversion device and the diode element temperature when the primary side voltage and secondary side voltage of the DC-DC voltage conversion device coincide and the semiconductor switching elements have stopped switching.
6. The DC-DC voltage conversion device according to claim 1 , wherein the main conversion circuit is such that a smoothing capacitor and an inductor are connected between a primary side positive electrode side terminal and negative electrode side terminal of the main conversion circuit, a serial body of four power semiconductor units wherein the semiconductor switching element and diode element are connected in anti-parallel is connected between a secondary side positive electrode side terminal and negative electrode side terminal, a terminal of the inductor differing from a connection terminal for a terminal of the smoothing capacitor is connected to a connection point of a second power semiconductor unit and third power semiconductor unit of the serial body of power semiconductor units, and an energy shifting capacitor is connected between a connection point of a first power semiconductor unit and the second power semiconductor unit and a connection point of the third power semiconductor unit and a fourth power semiconductor unit.
7. The DC-DC voltage conversion device according to claim 1 , wherein the semiconductor switching element is an SiC element.