Shorts prevention in organic light-emitting diodes

1. An organic light emitting diode, comprising:

a first electrode layer;

a second electrode layer;

an organic light-emitting layer disposed between the first electrode layer and the second electrode layer; and

a passivation layer arranged adjacent to the first electrode layer,

wherein the passivation layer is reactive with the first electrode layer to form a passive material at a reaction temperature induced by an evolving short circuit,

wherein

the first electrode is comprised of a low work-function material, and

the passivation layer comprises at least one clathrate material.

2. The organic light emitting diode according to claim 1 , wherein the passive material comprises an oxide and/or an alkoxide.

3. The organic light emitting diode according to claim 1 , wherein the passivation layer has a decomposition temperature below a melting temperature of the first electrode layer, and

the passivation layer decomposes at the reaction temperature.

4. The organic light emitting diode according to claim 3 ,

wherein the passive material comprises an oxide and/or an alkoxide,

wherein the oxide and/or the alkoxide is formed by a sequence of the release of a passivating agent from the passivation layer.

5. The organic light emitting diode according to claim 1 , wherein the clathrate material comprises at least one passivating agent selected from a group consisting of O 2 , H 2 O, CO 2 , MeOH, HCOOH and N 2 O.

6. The organic light emitting diode according to claim 1 , wherein the clathrate material comprises at least one compound selected from a group consisting of:

quinones and naphtoquinones,

4-p-Hydroxyphenyl-2,2,4-trimethylchroman,

steroids,

cholic acid, deoxycholic acid and derivatives thereof,

urea, thiourea and N-alkylated and N-arylated derivatives thereof,

Triphenylcarbinols and derivatives thereof, and

Perhydrotriphenylenes and derivatives thereof.

7. The organic light emitting diode according to claim 1 , wherein the first electrode layer comprises a protective metal layer in combination with the low work-function material.

8. The organic light emitting diode according to claim 1 , wherein the second electrode layer comprises indium tin oxide.

9. A display device comprising an organic light emitting diode according to claim 1 .

10. The organic light emitting diode according to claim 1 , wherein the passive material is formed through a solid state reaction with the first electrode at the reaction temperature.

11. The organic light emitting diode according to claim 1 , wherein the low work-function material is Ba or LiF.

12. The organic light emitting diode according to claim 1 , wherein the low work-function material is covered with Al or Ag.

13. The organic light emitting diode according to claim 1 , wherein the passivation layer is non-reactive at temperatures lower than the reaction temperature.

14. The organic light emitting diode according to claim 1 , wherein the passivation layer comprises an organic and/or inorganic peroxide material.

15. The organic light emitting diode according to claim 14 , wherein the peroxide material is selected from a group consisting of:

alkali and/or earth alkali peroxides and/or zinc peroxide,

alkali percarbonates, periodates, perborates, persulfates, peroxodisulfates,

perbromates, perchlorates, and

t-butylperoxide, Di-t-butylperoxideL Benzoylperoxide, Benzoyl-alkyl-peroxides, anthracenperoxide, ascaridol, MCPBA, Trifluorperethanolic acid and mixtures thereof.