Hybrid thin film transistor structure, display device, and method of making the same
A display device, and method for manufacture, having a substrate; a first thin film transistor (TFT) on the substrate, the first TFT having a first active layer, a first gate insulator, and a first gate electrode; a second TFT on the substrate, the second TFT having a second active layer, a second gate insulator and a second gate electrode. The first gate insulator is disposed between the first gate electrode and the first active layer, and the first gate insulator is in contact with the first active layer. The second gate insulator is disposed between the second gate electrode and the second active layer, and the second gate insulator is in contact with the second active layer. A material of the first active layer is different than a material of the second active layer, and a hydrogen concentration of the second gate insulator is different from a hydrogen concentration of the first gate insulator.
1. A display device, comprising:
a substrate having a surface;
a first thin film transistor (TFT) on said substrate, said first thin film transistor comprising a first active layer, a first gate insulator, and a first gate electrode, wherein said first thin film transistor is adjacent to said surface;
a second thin film transistor (TFT) on said substrate, said second thin film transistor comprising a second active layer, a second gate insulator and a second gate electrode;
wherein said first gate insulator is disposed between said first gate electrode and said first active layer;
wherein a material of said first active layer is different from a material of said second active layer;
wherein a hydrogen concentration of said second gate insulator is different from a hydrogen concentration of said first gate insulator; and
a buffer layer disposed between said first active layer and said second active layer, wherein said second active layer, said buffer layer and said first active layer are sequentially disposed on said substrate along a direction perpendicular to said surface of said substrate, comprising:
a first sublayer disposed on said second active layer; and
a second sublayer disposed on said first sublayer,
wherein said second gate insulator is disposed between said second gate electrode and said second active layer, and disposed above the first sublayer.
2. The display device according to claim 1 , wherein said material of said second active layer comprises metal oxide.
3. The display device according to claim 1 , wherein said hydrogen concentration of said second gate insulator is less than or equal to 5 atomic percent and greater than or equal to 0 atomic percent.
4. The display device according to claim 3 , wherein said hydrogen concentration of said first gate insulator is greater than 5 atomic percent and less than 10 atomic percent.
5. The display device according to claim 1 , wherein a material of said first gate insulator comprises at least one of silicon oxide, silicon nitride, and silicon oxynitride, and a material of said second gate insulator comprises at least one of silicon oxide and silicon oxynitride.
6. The display device according to claim 1 , wherein said first gate insulator and said second gate insulator overlap.
7. A display device, comprising:
a substrate having a surface;
a first thin film transistor (TFT) on said substrate, said first thin film transistor comprising a first active layer, a first gate insulator and a first gate electrode, wherein said first thin film transistor is adjacent to said surface;
a second thin film transistor (TFT) on said substrate, said second thin film transistor comprising a second active layer, a second gate insulator and a second gate electrode;
wherein said first gate insulator is disposed between said first gate electrode and said first active layer;
wherein a material of said first active layer is different from a material of said second active layer, and a material of said first gate insulator is different from a material of said second gate insulator;
wherein said material of said second active layer comprises metal oxide and said material of said second gate insulator comprises silicon oxide; and
a buffer layer disposed between said first active layer and said second active layer, wherein said second active layer, said buffer layer and said first active layer are sequentially disposed on said substrate along a direction perpendicular to said surface of said substrate, comprising:
a first sublayer disposed on said second active layer; and
a second sublayer disposed on said first sublayer,
wherein said second gate insulator is disposed between said second gate electrode and said second active layer, and disposed above the first sublayer.
8. The display device according to claim 7 , wherein a hydrogen concentration of said second gate insulator is less than a hydrogen concentration of said first gate insulator.
9. The display device according to claim 8 , wherein said hydrogen concentration of said second gate insulator is less than or equal to 5 atomic percent and greater than or equal to 0 atomic percent.
10. The display device according to claim 9 , wherein said hydrogen concentration of said first gate insulator is greater than 5 atomic percent and less than 10 atomic percent.
11. The display device according to claim 7 , further comprising a blanking layer disposed between said second active layer and said substrate.
12. The display device according to claim 7 , wherein said second thin film transistor further comprises a third gate electrode, wherein said second gate electrode is disposed above said second active layer and said third gate electrode is disposed below said second active layer.
13. The display device according to claim 7 , wherein said first gate insulator and said second gate insulator overlap.