Optoelectronic device and method for manufacturing the same

1. An optoelectronic device, comprising:

a semiconductor stack, comprising a first semiconductor layer, an active layer formed on the first semiconductor layer, and a second semiconductor layer on the active layer;

a first metal layer formed on a top surface of the second semiconductor layer;

a third metal layer formed on the first metal layer;

a fourth metal layer comprises one portion directly formed on a top surface of the first semiconductor layer; and

an insulative layer directly formed on the top surface of the first semiconductor layer and the top surface of the second semiconductor layer;

wherein the first metal layer comprises a first top surface, and the insulative layer comprises a third top surface on the second semiconductor layer and a fourth top surface on the first semiconductor layer,

wherein a first height difference between a height from the first top surface of the first metal layer to the top surface of the second semiconductor layer and a height from the third top surface of the insulative layer to the top surface of the second semiconductor layer is less than 1 μm,

wherein the fourth metal layer comprises another one portion directly formed on the third top surface of the insulative layer;

wherein a height difference is between a top surface of the one portion and a top surface of the another one portion of the fourth metal layer, the top surface of the one portion of the fourth metal layer is exposed by the another one portion of the fourth metal layer; and

wherein a first distance is between a top surface of the third metal layer and the top surface of the first semiconductor layer, a second distance is between the top surface of the another one portion of the fourth metal layer and the top surface of the first semiconductor layer, and a difference between the first distance and the second distance is less than 1 μm.

2. The optoelectronic device of claim 1 , further comprising:

a second metal layer formed between the fourth metal layer and the first semiconductor layer, wherein the second metal layer comprises a second top surface, a second height difference between a height from the second top surface of the second metal layer to the top surface of the first semiconductor layer and a height from the fourth top surface of the insulative layer to the top surface of the first semiconductor layer is less than 1 μm.

3. The optoelectronic device of claim 1 , wherein the insulative layer is formed under the third metal layer.

4. The optoelectronic device of claim 1 , wherein the first metal layer comprises multiple layers.

5. The optoelectronic device of claim 1 , wherein a space between a sidewall of the first metal layer and a sidewall of the insulative layer is less than 3 μm.

6. The optoelectronic device of claim 1 , wherein the third metal layer is formed between a sidewall of the first metal layer and a sidewall of the insulative layer.

7. The optoelectronic device of claim 6 , wherein the first metal layer is covered by the third metal layer.

8. The optoelectronic device of claim 2 , wherein a space between a sidewall of the second metal layer and a sidewall of the insulative layer is less than 3 μm.