Emission conversion amplifier for solid state lasers
View Patent ↗Solid state lasers emitting at first and a second wavelengths include an additional a conversion amplifier for converting photons having the first wavelength into photons having the second wavelength, thereby improving output efficiency of a preferred wavelength. Erbium lasing materials such as erbium doped garnets and fluorides, are employed, along with the conversion amplifier formed of a transition metal doped II-VI semiconductor, e.g., Cr:ZnSe.
1. A cascaded dual-output laser system comprising:
a lasing material formed from a rare-earth ion doped material;
a pump component for pumping the lasing material to produce at least two optical signals having non-overlapping first and second wavelengths; and
a conversion amplifier for receiving the at least two optical signals, wherein the conversion amplifier is formed of a material that absorbs photons having the first wavelength and responsive to said absorption emits photons having the second wavelength.
2. The cascaded dual-output laser system of the claim 1 , wherein the lasing material includes a sesquioxide.
3. The cascaded dual-output laser system of the claim 2 , where in the lasing material is Er-doped yttria (Y 2 O 3 ).
4. The cascaded dual-output laser system of the claim 1 , wherein the non-overlapping first and second wavelengths are approximately 1.6 μm and 2.7 μm.
5. The cascaded dual-output laser system of the claim 1 , wherein the conversion amplifier is formed of Cr:ZnSe.
6. The cascaded dual-output laser system of the claim 1 , wherein the at least two optical signals are collinear.
7. The cascaded dual-output laser system of the claim 1 , wherein the lasing material and pump are operated in a cryogenic cooler.
8. The cascaded dual-output laser system of claim 1 , wherein the lasing material includes a dopant selected from the group consisting of
dysprosium (Dy), erbium (Er), europium (Eu), holmium (Ho), lanthanum (La), lutetium (Lu), neodymium (Nd), praseodymium (Pr), promethium (Pm), samarium (Sm), scandium (Sc), terbium (Tb), thulium (Tm), and yttrium (Y).
9. A solid-state laser comprising:
an oscillation cavity including at least a first mirror, a gain material and a second material for generating a first and a second emission beam having different wavelengths; and
a conversion amplifier for converting the first emission beam into the second emission beam.
10. The solid-state laser of claim 9 , wherein the conversion amplifier is located within the oscillation cavity.
11. The solid-state laser of claim 9 , wherein the conversion amplifier is located external to the oscillation cavity.
12. The solid-state laser of claim 9 , wherein the conversion amplifier is comprised of a transition metal doped II-VI semiconductor.
13. The solid-state laser of claim 12 , wherein the conversion amplifier comprises Cr:ZnSe/Cr:ZnS.
14. The solid-state laser of claim 9 , wherein the different wavelengths are approximately 1.5 μm and 3.0 μm.
15. The solid-state laser of claim 12 , wherein the solid-state medium includes a dopant selected from the group consisting of
dysprosium (Dy), erbium (Er), europium (Eu), holmium (Ho), lanthanum (La), lutetium (Lu), neodymium (Nd), praseodymium (Pr), promethium (Pm), samarium (Sm), scandium (Sc), terbium (Tb), thulium (Tm), and yttrium (Y).
16. A rare earth-doped direct amplification laser system comprising:
a multiple wavelength emission rare earth-doped laser configured to emit at a first, second and third non-overlapping wavelengths; and
a first conversion amplifier for receiving the first wavelength emissions and converting to the second wavelength.
17. The rare earth-doped direct amplification laser system of claim 16 , further comprising:
a second conversion amplifier for receiving the second wavelength emissions and converting the second wavelengths to a third of the multiple wavelengths.
18. The rare earth-doped direct amplification laser system of claim 16 , wherein the multiple wavelength emissions are selected from the group consisting of 1.5 microns, 1.6 microns, 2.0 microns, 2.1 microns, 2.7 microns, 3.0 microns, and 4.0 microns.
19. The rare earth-doped direct amplification laser system of claim 16 , wherein the rare-earth dopant is selected from the group consisting of dysprosium (Dy), erbium (Er), europium (Eu), holmium (Ho), lanthanum (La), lutetium (Lu), neodymium (Nd), praseodymium (Pr), promethium (Pm), samarium (Sm), scandium (Sc), terbium (Tb), thulium (Tm), and yttrium (Y).
20. The rare earth-doped direct amplification laser system of claim 17 , wherein the first and second conversion amplifiers are comprised of one or more materials selected from the group consisting of: a solid-state medium and a nonlinear medium.