Method for manufacturing semiconductor memory device and semiconductor memory device
According to one embodiment, a method for manufacturing a semiconductor memory device includes simultaneously forming a plurality of first holes and a plurality of second holes in a stacked body. The stacked body includes a plurality of first layers and a plurality of second layers. The method includes etching a portion between the second holes next to each other in the stacked body, and connecting at least two or more second holes to form a groove. The method includes forming a film including a charge storage film on a sidewall of the first holes. The method includes forming a channel film on a sidewall of the film including the charge storage film.
1. A method for manufacturing a semiconductor memory device, comprising:
forming, in a stacked body including a plurality of first layers and a plurality of second layers each of which is provided between the first layers, a plurality of first holes and a plurality of second holes in which a channel film is to be formed inside the first holes, the first holes and the second holes extending through the stacked body in a stacking direction of the stacked body and being arrayed in a first direction intersecting the stacking direction and in a direction oblique to the first direction;
etching a portion between the second holes next to each other in the stacked body to connect the second holes next to each other in the first direction and the second holes next to each other in the direction oblique to the first direction via the etched portion and form a trench in the stacked body.
2. The method according to claim 1 , wherein etching a portion between the second holes is performed by a dry etching method.
3. The method according to claim 1 , wherein etching a portion between the second holes is performed by an isotropic etching.
4. The method according to claim 1 , wherein etching a portion between the second holes is performed to connect two second holes next to each other regarding the direction oblique to the first direction.
5. The method according to claim 1 , wherein a minimum width of the trench is larger than a diameter of the first holes.
6. The method according to claim 1 , wherein the trench separates the stacked body in a direction orthogonal to the first direction.
7. The method according to claim 6 , further comprising:
forming a plurality of wiring lines electrically connected to the channel film and extending in the direction orthogonal to the first direction above the stacked body.
8. The method according to claim 6 , further comprising:
separating an uppermost layer of the stacked body in the direction orthogonal to the first direction at a region different from the trench.
9. The method according to claim 1 , wherein the first holes and the second holes are arrayed in a houndstooth pattern in the stacked body.
10. The method according to claim 1 , wherein a diameter of the first holes and a diameter of the second holes are substantially equal to each other.
11. The method according to claim 1 , wherein etching a portion between the second holes is performed to connect the second holes by increasing a hole diameter of the second holes.
12. The method according to claim 1 , further comprising:
alternately stacking a plurality of conductive layers as the first layers and a plurality of insulating layers as the second layers to form the stacked body.
13. The method according to claim 1 , further comprising:
forming the channel film in a cylindrical shape inside the first holes.