Memory controller

1. A memory system comprising:

a nonvolatile memory; and

a controller including a randomizer, the controller configured to:

receive first data from an external device,

encode the first data to generate an error correction code;

generate, by the randomizer, second data which is randomized, the size of the second data being smaller than the size of the first data;

generate third data which includes the first data, the error correction code, and the second data, the size of the third data being the size of a write unit of the nonvolatile memory; and

transmit the third data to the nonvolatile memory as write data.

2. The memory system of claim 1 , wherein

the controller is further configured to receive the first data of a unit size from the external device and generate the error correction code by adding variable-length error correction data to the first data of the unit size.

3. The memory system of claim 1 , wherein

the controller is further configured to manage data indicating a defective cell of the nonvolatile memory and control the nonvolatile memory to prevent the nonvolatile memory from writing write data corresponding to the defective cell in the third data.

4. The memory system of claim 3 , wherein

the controller is configured to control the nonvolatile memory to make an address corresponding to the defective cell skipped.

5. The memory system of claim 3 , wherein

the controller is configured to change the write data corresponding to the defective cell in the third data to different data.

6. A memory system comprising:

a nonvolatile semiconductor memory including a buffer memory and a memory cell array; and

a controller including:

an encoder which subjects first data received from an external device to error correction coding;

a randomizing circuit which randomizes second data output from the encoder; and

an interface which transmits third data output from the randomizing circuit to the nonvolatile semiconductor memory and controls write/read of the nonvolatile semiconductor memory,

wherein the interface transmits data of a size larger than a size of a write unit of the nonvolatile semiconductor memory to the nonvolatile semiconductor memory in a write sequence, wherein

the data of the size larger than the size of the write unit comprises padding data at an end of a time sequence, and

the data of the size larger than the size of the write unit is written to the buffer memory, and the data of the size of the write unit is read from the buffer memory and written to the memory cell array.

7. A memory system comprising:

a nonvolatile semiconductor memory including a buffer memory and a memory cell array; and

a controller including:

an encoder which subjects first data received from an external device to error correction coding;

a randomizing circuit which randomizes second data output from the encoder; and

an interface which transmits third data output from the randomizing circuit to the nonvolatile semiconductor memory and controls write/read of the nonvolatile semiconductor memory,

wherein the interface transmits data of a size equal to a size of a write unit of the nonvolatile semiconductor memory to the nonvolatile semiconductor memory in a write sequence, wherein

in a case where the size of the third data that includes padding data at an end of a time sequence is larger than the size of the write unit,

data exceeding the size of the write unit, of the third data of the size larger than the size of the write unit is not written to the buffer memory.

8. The memory system of claim 1 , wherein

the second data is not received from the external device.

9. The memory system of claim 1 , wherein

the controller is further configured to:

randomize the first data;

randomize the generated error correction code;

generate fourth data which includes the randomized first data, the randomized error correction code, and the second data, the size of the fourth data being the size of a write unit of the nonvolatile memory; and

transmit the fourth data to the nonvolatile memory as write data.

10. The memory system of claim 1 , wherein

the second data includes all “0” data or all “1” data.

11. The memory system of claim 6 , wherein

padding data is added to follow the first data when the size of the data to be transmitted to the nonvolatile semiconductor memory in the write sequence is smaller than the write unit.

12. The memory system of claim 6 , wherein

padding data is added to follow the second data when the size of the data to be transmitted to the nonvolatile semiconductor memory in the write sequence is smaller than the write unit.

13. The memory system of claim 6 , wherein

padding data is added to follow the third data when the size of the data to be transmitted to the nonvolatile semiconductor memory in the write sequence is smaller than the write unit.

14. The memory system of claim 7 , wherein

padding data is added to follow the first data when the size of the data to be transmitted to the nonvolatile semiconductor memory in the write sequence is smaller than the write unit.

15. The memory system of claim 7 , wherein

padding data is added to follow the second data when the size of the data to be transmitted to the nonvolatile semiconductor memory in the write sequence is smaller than the write unit.

16. The memory system of claim 7 , wherein

padding data is added to follow the third data when the size of the data to be transmitted to the nonvolatile semiconductor memory in the write sequence is smaller than the write unit.