Pattern forming method, self-organization material, and method of manufacturing semiconductor apparatus
According to one embodiment, a pattern forming method includes supplying, onto an under layer, a self-organization material including a block copolymer which includes a first polymer and a second polymer, and a third polymer having a molecular structure with oxygen attached to a cyclic structure, wherein the third polymer is bonded to the first polymer, and phase-separating the block copolymer to form a phase-separation pattern on the under layer.
1. A pattern forming method, comprising:
supplying, on to an under layer, a self-organization material including a block copolymer which includes a first polymer, a second polymer, and a third polymer, wherein the third polymer is bonded to the first polymer and has a molecular structure including oxygen attached to a cyclic structure; and
after supplying the self-organization material onto the under layer, phase separating the block copolymer to form a phase-separation pattern on the under layer.
2. The method according to claim 1 ,
wherein the self-organization material further includes a fourth polymer which is bonded to the second polymer.
3. The method according to claim 1 ,
wherein the first polymer is formed by polymerizing m first monomers, where m is an integer equal to or greater than 2, and
wherein the third polymer is bonded to at least one of the m first monomers.
4. The method according to claim 2 ,
wherein the second polymer is formed by polymerizing n second monomers, where n is an integer equal to or greater than 2, and
wherein the fourth polymer is bonded to at least one of the n second monomers.
5. The method according to claim 4 ,
wherein the fourth polymer does not contain silicon.
6. The method according to claim 2 ,
wherein the fourth polymer does not contain silicon.
7. The method according to claim 1 ,
wherein the phase-separation pattern comprises cylindrical blocks having diameters ranging from approximately 40 nanometers to 60 nanometers.
8. The method according to claim 1 , wherein the third polymer is a saccharide.
9. A method of manufacturing a semiconductor apparatus comprising:
placing a self-organization material on an under layer, the self-organization material including a block copolymer which includes a first polymer, a second polymer, and a third polymer, the third polymer is bonded to the first polymer and has a molecular structure including oxygen attached to a cyclic structure;
phase separating the block copolymer on the under layer to form a phase-separation pattern;
removing the first polymer or second polymer from the phase-separation pattern; and
after removing the first polymer or second polymer from the phase-separation pattern, processing the under layer by using the phase-separation pattern as a mask.
10. The method according to claim 9 ,
wherein the phase separation pattern comprises cylindrical blocks having diameters ranging from approximately 40 nanometers to 60 nanometers.