Semiconductor device and method of forming WLCSP
View Patent ↗A semiconductor substrate contains a plurality of semiconductor die with a saw street between the semiconductor die. A plurality of bumps is formed over a first surface of the semiconductor die. An insulating layer is formed over the first surface of the semiconductor die between the bumps. A portion of a second surface of the semiconductor die is removed and a conductive layer is formed over the remaining second surface. The semiconductor substrate is disposed on a dicing tape, the semiconductor substrate is singulated through the saw street while maintaining position of the semiconductor die, and the dicing tape is expanded to impart movement of the semiconductor die and increase a space between the semiconductor die. An encapsulant is deposited over the semiconductor die and into the space between the semiconductor die. A channel is formed through the encapsulant between the semiconductor die to separate the semiconductor die.
1. A method of making a semiconductor device, comprising:
providing a semiconductor substrate including a plurality of semiconductor die with saw streets of different widths to create asymmetrical spacing between the semiconductor die;
forming a plurality of bumps over a first surface of the semiconductor die;
forming an insulating layer over the first surface of the semiconductor die between the bumps;
disposing the semiconductor substrate on a dicing tape;
singulating the semiconductor substrate through the saw streets while maintaining position of the semiconductor die on the dicing tape;
expanding the dicing tape to impart movement of the semiconductor die and increase spacing between the semiconductor die, wherein the different widths of the saw streets are selected to compensate for non-linear expansion of the dicing tape;
depositing an encapsulant over the semiconductor die and into the space between the semiconductor die; and
forming a channel through the encapsulant between the semiconductor die to separate the semiconductor die.
2. The method of claim 1 , further including forming the insulating layer over the first surface of the semiconductor die and around the bumps.
3. The method of claim 1 , further including depositing the encapsulant over a portion of the first surface of the semiconductor die.
4. The method of claim 1 , further including removing a portion of a second surface of the semiconductor die opposite the first surface of the semiconductor die.
5. The method of claim 1 , further including forming a conductive layer over a second surface of the semiconductor die opposite the first surface of the semiconductor die.
6. The method of claim 1 , further including:
disposing the semiconductor substrate over a dicing tape; and
expanding the dicing tape to impart movement of the semiconductor die to increase the space between the semiconductor die.
7. The method of claim 1 , wherein a first distance between a first semiconductor die and an adjacent second semiconductor die on the semiconductor substrate is greater than a second distance between the first semiconductor die and an adjacent third semiconductor die on the semiconductor substrate.
8. A method of making a semiconductor device, comprising:
providing a first carrier;
disposing a semiconductor substrate including a plurality of semiconductor die on the first carrier;
forming a plurality of bumps over a first surface of the semiconductor die;
forming an insulating layer over the first surface of the semiconductor die between the bumps;
singulating the semiconductor substrate between the semiconductor die while maintaining position of the semiconductor die on the first carrier;
expanding a space between the semiconductor die on the first carrier;
disposing the semiconductor die onto a second carrier with the bumps oriented toward the second carrier while maintaining the expanded space on the first carrier;
removing the first carrier;
depositing an encapsulant over the semiconductor die and into the space between the semiconductor on the second carrier; and
forming a channel through the encapsulant between the semiconductor die to separate the semiconductor die.
9. The method of claim 8 , further including forming the insulating layer over the first surface of the semiconductor die and around the bumps.
10. The method of claim 8 , further including depositing the encapsulant over a portion of the first surface of the semiconductor die.
11. The method of claim 8 , further including removing a portion of a second surface of the semiconductor die opposite the first surface of the semiconductor die.
12. The method of claim 8 , further including forming a conductive layer over a second surface of the semiconductor die opposite the first surface of the semiconductor die.
13. The method of claim 8 , further including:
disposing the semiconductor substrate over a dicing tape; and
expanding the dicing tape to expand the space between the semiconductor die.
14. The method of claim 8 , wherein a first distance between a first semiconductor die and an adjacent second semiconductor die on the semiconductor substrate is greater than a second distance between the first semiconductor die and an adjacent third semiconductor die on the semiconductor substrate.
15. A method of making a semiconductor device, comprising:
providing a plurality of semiconductor die with asymmetrical spacing between the semiconductor die;
forming a plurality of bumps over a first surface of the semiconductor die;
forming an insulating layer over the first surface of the semiconductor die between the bumps;
disposing the semiconductor die on a dicing tape;
expanding the dicing tape to impart movement of the semiconductor die and increase spacing between the semiconductor die, wherein the asymmetrical spacing between the semiconductor die compensates for non-linear expansion of the dicing tape;
depositing an encapsulant over the semiconductor die and into the space between the semiconductor die; and
forming a channel through the encapsulant between the semiconductor die.
16. The method of claim 15 , further including depositing the encapsulant over a portion of the first surface of the semiconductor die.
17. The method of claim 15 , further including forming a conductive layer over a second surface of the semiconductor die opposite the first surface of the semiconductor die.
18. The method of claim 15 , wherein the space between the semiconductor die is at least 75 micrometers.
19. The method of claim 15 , wherein the semiconductor die includes a discrete semiconductor device.