Semiconductor device having a light receiving element
View Patent ↗Provided is a semiconductor device having a light receiving element in which a plurality of photodiodes are formed on a top surface of a P-type semiconductor substrate, an insulating oxide film is formed on surfaces of the photodiodes 51 via a buried oxide film, and an SOI layer of single crystal silicon is formed between a photodiode and an adjacent photodiode via the buried oxide film for shielding unnecessary light.
1. A semiconductor device comprising a light receiving element,
the light receiving element comprising:
a plurality of photodiodes each having a PN junction between a first conductivity type semiconductor substrate and a second conductivity type layer region on an upper surface of the first conductivity type semiconductor substrate,
the semiconductor device comprising:
an SOI layer comprising single crystal silicon between a photodiode and an adjacent photodiode among the plurality of photodiodes and above the first conductivity type semiconductor substrate and separated therefrom by a buried oxide film; and
an oxide film on the plurality of photodiodes and the SOI layer,
wherein the SOI layer has a thickness sufficient to absorb light of a predetermined wavelength and having a particular reaching depth in the semiconductor substrate.
2. The semiconductor device comprising a light receiving element according to claim 1 , wherein the SOI layer and the plurality of photodiodes overlap with each other in planar view.
3. The semiconductor device comprising a light receiving element according to claim 1 , wherein the oxide film comprises the buried oxide film and an insulating oxide film on the buried oxide film.
4. The semiconductor device comprising a light receiving element according to claim 1 , wherein the oxide film comprises an insulating oxide film.